CYSTEKEC BTA1774C3

Spec. No. : C306C3
Issued Date : 2004.03.03
CYStech Electronics Corp.
Revised Date :
Page No. : 1/4
General Purpose PNP Epitaxial Planar Transistor
BTA1774C3
Description
• The BTA1774C3 is designed for use in driver stage of AF amplifier and general purpose amplification.
• High HFE and excellent linearity
• Complementary to BTC4617C3.
Symbol
Outline
BTA1774C3
SOT-523
C
B:Base
C:Collector
E:Emitter
B
E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
BTA1774C3
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj
Tstg
-60
-50
-6
-150
150
833.3
150
-55~+150
V
V
V
mA
mW
°C/W
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C306C3
Issued Date : 2004.03.03
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
hFE
fT
Cob
Min.
-60
-50
-6
120
-
Typ.
140
4
Max.
-0.1
-0.1
-0.5
560
5
Unit
V
V
V
µA
µA
V
MHz
pF
Test Conditions
IC=-50µA
IC=-1mA
IE=-50µA
VCB=-60V
VEB=-6V
IC=-50mA, IB=-5mA
VCE=-6V, IC=-1mA
VCE=-12V, IC=-2mA, f=30MHz
VCB=-12V, IE=0, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Marking Code and Classification Of hFE
Rank
Q
R
S
hFE Range
120~270
180~390
270~560
Marking
FQ
FR
FS
BTA1774C3
CYStek Product Specification
Spec. No. : C306C3
Issued Date : 2004.03.03
CYStech Electronics Corp.
Revised Date :
Page No. : 3/4
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
Saturation Voltage---(mV)
Current Gain---HFE
HFE@VCE=6V
100
VCE(SAT)@IC=10IB
100
10
10
0.1
1
10
100
0.1
1000
10
100
1000
Collector Current---IC(mA)
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
Cutoff Frequency vs Collector Current
1
Cutoff Frequency---FT(GHZ)
10000
Saturation Voltage---(mV)
1
VBE(SAT)@IC=10IB
1000
FT@VCE=12V
0.1
100
0.1
1
10
100
Collector Current---IC(mA)
1000
1
10
100
Collector Current---IC(mA)
Power Derating Curve
Power Dissipation---PD(mW)
160
140
120
100
80
60
40
20
0
0
BTA1774C3
50
100
150
Ambient Temperature --- Ta(℃ )
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C306C3
Issued Date : 2004.03.03
Revised Date :
Page No. : 4/4
SOT-523 Dimension
Marking:
C
A
3
F_
3E_
D
1
B
_ : hFE Rank Code
2
G
F
H
I
E
3-Lead SOT-523 Plastic
Surface Mounted Package
CYStek Package Code: C3
J
K
Style: Pin 1.Base 2.Emitter 3.Collector
L
N
M
O
*: Typical
Inches
Min.
Max.
0.0079 0.0157
0.0591 0.0669
0.0118 0.0197
0.0295 0.0335
0.0118 0.0197
0.0039 0.0118
0.0039 0.0118
*0.0197
-
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
0.20
0.40
1.50
1.70
0.30
0.50
0.75
0.85
0.30
0.50
0.10
0.30
0.10
0.30
*0.50
-
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
*0.0197
0.0610 0.0650
0.0276 0.0315
0.0224 0.0248
0.0020 0.0059
0.0039 0.0118
0
0.0031
Millimeters
Min.
Max.
*0.50
1.55
1.65
0.70
0.80
0.57
0.63
0.05
0.15
0.10
0.30
0
0.08
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1774C3
CYStek Product Specification