CYStech Electronics Corp. Spec. No. : C227S6R Issued Date : 2003.08.29 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistors (dual transistors) HBN2222S6R Features • Two BTN2222A chips in a SOT-363R package. • Mounting possible with SOT-323 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half. Equivalent Circuit Outline HBN2222S6R SOT-363R Tr2 Tr1 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits Unit 75 40 6 600 300(total) 150 -55~+150 *1 V V V mA mW °C °C Note : *1 200mW per element must not be exceeded HBN2222S6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C227S6R Issued Date : 2003.08.29 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICEX IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) 1 *VBE(sat) 2 *hFE 1 *hFE 2 *hFE 3 *hFE 4 *hFE 5 *hFE 6 fT Cob Min. 75 40 6 35 50 75 100 50 40 300 - Typ. - Max. 10 10 100 0.3 1.0 1.2 2.0 300 8 Unit V V V nA nA nA V V V V MHz pF Test Conditions IC=10µA IC=10mA IE=10µA VCB=60V VCB=60V, VEB(off) = 3V VEB=3V IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=100µA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=1V, IC=150mA VCE=10V, IC=500mA VCE=20V, IC=20mA, f=100MHz VCB=10V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% HBN2222S6R CYStek Product Specification Spec. No. : C227S6R Issued Date : 2003.08.29 CYStech Electronics Corp. Revised Date : Page No. : 3/4 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 100 Saturation Voltage---(mV) Current Gain---HFE VCE=10V VCE=1V 10 0.1 1 10 100 VCE(SAT)@IC=10IB 100 10 1000 Collector Current---IC(mA) 0.1 1 10 100 Collector Current---IC(mA) Saturation Voltage vs Collector Current Cutoff Frequency vs Collector Current 1000 1000 10000 Cutoff Frequency---fT(MHz) Saturation Voltage---(mV) VCE=20V VBE(SAT)@IC=10IB 1000 100 100 0.1 1 10 100 1000 1 10 100 Collector Current---IC(mA) Collector Current---IC(mA) Power Derating Curves Power Dissipation---P D(mW) 350 300 Dual 250 Single 200 150 100 50 0 0 50 100 150 200 Ambient Temperature---TA(℃) HBN2222S6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C227S6R Issued Date : 2003.08.29 Revised Date : Page No. : 4/4 SOT-363R Dimension Style: Pin 1. Emitter1 (E1) Pin 2. Base1 (B1) Pin 3. Collector2 (C2) Pin 4. Emitter2 (E2) Pin 5. Base2 (B2) Pin 6. Collector1 (C1) Marking: 1PR 6-Lead SOT-363R Plastic Surface Mounted Package CYStek Package Code: S6R *:Typical Inches Min. Max. 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026BSC 0.004 DIM A B C D G H Millimeters Min. Max. 1.8 2.2 1.15 1.35 0.8 1.1 0.1 0.3 0.65BSC 0.1 DIM J K N S Y Inches Min. Max. 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 Millimeters Min. Max. 0.1 0.25 0.1 0.30 0.20 REF 2.00 2.40 0.30 0.40 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : 42 Alloy ; solder plating • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. HBN2222S6R CYStek Product Specification