F E AT U R E S MODEL NO. DAMB51 1 1 1-8 GHz Broad Bandwidth Typical Gain of 8 dB +16 dBm P-out @ 1 dB compression Single Power Supply Input/Output VSWR Typical 1.5:1 20-Pin Hermetic Package Available as Die, Part# DAMB4011D AMPR Amp lif ie r +12V • 20 .080 ±.010 .310 ±.003 .045 ±.005 • 18 17 16 15 N/C 2 • INPUT .310 ±.003 N/C 1 .016 ±.001 PIN 1 .050 Typ. 19 • .125 Dia. ±.003 Thermal Button • 100pF • 14 N/C 3 13 4 12 5 11 6 7 8 N/C .020 ±.002 .005 ±.001 9 • • OUTPUT • 10 N/C .027 ±.004 S-Parameters (typical) -IDD = 99.1 mA FREQ S11 S21 S12 GHz MAG. ANG. MAG. ANG. MAG. ANG. Gain vs. Freq. (packaged) 10 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 10.5 9 GAIN (dB) 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 FREQUENCY (GHz) Note: 0.031 0.054 0.052 0.033 0.077 0.141 0.195 0.216 0.113 0.258 0.407 0.069 26 -66 -140 -114 -102 -122 -145 -176 150 -122 176 111 2.398 2.834 2.662 2.528 2.486 2.561 2.683 2.644 2.673 2.473 1.675 2.282 -169 159 115 80 47 14 -26 -68 -116 177 113 52 0.016 0.028 0.041 0.061 0.080 0.097 0.105 0.104 0.112 0.135 0.133 0.180 S22 MAG. ANG. 82 56 35 18 -7 -37 -74 -115 -163 126 60 8 0.371 0.304 0.247 0.236 0.224 0.168 0.060 0.096 0.166 0.070 0.339 0.206 -60 -86 -135 -177 141 101 70 160 110 -97 152 57 1. Test Conditions: VDD = +12V, TA = 25°C. 2. S-Parameters and other data have been measured with the die in a microstrip test fixture as shown in the typical bonding diagram. Input / Output Return Loss vs. Freq. (packaged) ELECTRICAL SPECIFICATIONS TA = 25˚C, VDD = +12V, RF = 4.0 GHz RETURN LOSS (dB) 0 -5 Parameter (1) -10 INPUT OUTPUT -15 -20 -25 -30 0 2 4 6 8 FREQUENCY (GHz) 10 12 Frequency of Operation Gain Gain Flatness Noise Figure Output 1 dB Compression Input / Output VSWR Reverse Isolation Output Third-Order Intercept (2) DC Power Supply Supply Current Note: DA I C O In d u s t r i e s Min Typ 1 6.8 ±0.5 5 Max Units 8 8 ±1.0 +16 18 10 1.5:1 23 +28 12 100 GHz dB dB dB dBm 2:1 15 120 dB dBm V mA 1. Min / Max Values Listed are Production Tested 2. Frequency Separation of Two Signals is 500 KHz Rev. ND / Iss. 1