PST1600A ... PST1600M PST1600A ... PST1600M Silicon Rectifiers – Half Bridge Silizium-Gleichrichter – Halbbrücke Version 2007-07-06 15.7 4 Nominal current Nennstrom ±0.2 3.8 3 10 Repetitive peak reverse voltage Periodische Spitzensperrspannung 4 13.2 3.4 1.5 TO-220AB Weight approx. Gewicht ca. 1 2 3 1.8 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert 0.9 2.54 Standard packaging in tubes Standard Lieferform in Stangen Dimensions - Maße [mm] Maximum ratings and Characteristics Type Typ 50...1000 V Plastic case Kunststoffgehäuse Type Typ 1 2 3 16 A Grenz- und Kennwerte Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 1) Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 1) Forward voltage Durchlass-Spannung VF [V] 1), Tj = 25°C IF = 5 A IF = 8 A PST1600A 50 50 < 1.0 < 1.1 PST1600B 100 100 < 1.0 < 1.1 PST1600D 200 200 < 1.0 < 1.1 PST1600G 400 400 < 1.0 < 1.1 PST1600J 600 600 < 1.0 < 1.1 PST1600K 800 800 < 1.0 < 1.1 PST1600M 1000 1000 < 1.0 < 1.1 Max. average forward current, R-load Dauergrenzstrom mit R-Last TC = 100°C TC = 100°C IFAV IFAV 8 A 1) 16 A 2) Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 30 A 3) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 135/150 A 1) Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 90 A2s 1) Tj -50...+150°C -50...+175°C Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 2 3 TS Per diode – Pro Diode Output current when operating two devices in a full bridge configuration Ausgangstrom bei Betrieb zweier Bauteile als Vollbrücke Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C © Diotec Semiconductor AG http://www.diotec.com/ 1 PST1600A ... PST1600M Characteristics Kennwerte Leakage current Sperrstrom Tj = 25°C VR = VRRM IR Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse < 10 µA < 2.5 K/W 1) RthC 102 120 [%] [A] 100 10 80 Tj = 125°C Tj = 25°C 1 60 40 -1 10 20 IF IFAV 0 0 TC 50 100 150 [°C] 10-2 0.4 Rated forward current vs. temp. of the case Zul. Richtstrom in Abh. v. d. Gehäusetemperatur 1 2 200a-(5a-0.95v) VF 0.8 1.0 1.2 1.4 [V] 1.8 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) Per diode – Pro Diode http://www.diotec.com/ © Diotec Semiconductor AG