DIOTEC TIP125_07

TIP125 ... TIP127
TIP125 ... TIP127
Si-Epitaxial Planar Darlington Power Transistors
Si-Epitaxial Planar Darlington-Leistungs-Transistoren
PNP
PNP
Version 2006-10-17
Max. power dissipation with cooling
Max. Verlustleistung mit Kühlung
4
3
3.8
Type
Typ
13.2
1 2 3
3.4
15.7
10±0.2
1.5
0.9
2.54
Dimensions - Maße [mm]
1=B
2/4 = C
3=E
65 W
Collector current
Kollektorstrom
5A
Plastic case
Kunststoffgehäuse
TO-220AB
Weight approx.
Gewicht ca.
2.2 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
TIP125
TIP126
TIP127
Collector-Emitter-volt. – Kollektor-Emitter-Spg.
B open
- VCEO
60 V
80 V
100 V
Collector-Base-voltage – Kollektor-Basis-Spg.
E open
- VCBO
60 V
80 V
100 V
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
- VEBO
5V
Ptot
Ptot
2 W 1)
65 W
Collector current – Kollektorstrom (dc)
- IC
5A
Peak Collector current – Kollektor-Spitzenstrom
- ICM
8A
Base current – Basisstrom (dc)
- IB
120 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Power dissipation – Verlustleistung
without cooling – ohne Kühlung
with cooling – mit Kühlung
TA = 25°C
TC = 25°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
hFE
hFE
1000
1000
–
–
–
–
hfe
4
DC current gain – Kollektor-Basis-Stromverhältnis 2)
- IC = 0.5 A, - VCE = 3 V
- IC = 3 A, - VCE = 3 V
Small signal current gain – Kleinsignal-Stromverstärkung
- IC = 3 A, - VCE = 4 V, f = 1 MHz
1
2
Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
TIP125 ... TIP127
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
- VCEsat
- VCEsat
–
–
–
–
2V
4V
- VBE
–
–
2.5 V
- ICEO
- ICEO
- ICEO
–
–
–
–
–
–
500 nA
500 nA
500 nA
- ICBO
- ICBO
- ICBO
–
–
–
–
–
–
200 nA
200 nA
200 nA
CCB0
–
–
200 pF
Collector-Emitter saturation volt. – Kollektor-Emitter-Sättigungsspg. 2)
- IC = 3 A, IB = 12 mA
- IC = 5 A, IB = 20 mA
Base-Emitter voltage – Basis-Emitter-Spannung 2)
- IC = 3 A, - VCE = 3 V
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
- VCE = 30 V, (B open)
- VCE = 40 V, (B open)
- VCE = 50 V, (B open)
TIP125
TIP126
TIP127
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 60 V, (E open)
- VCB = 80 V, (E open)
- VCB = 100 V, (E open)
TIP125
TIP126
TIP127
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 100 kHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 63 K/W 1)
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
RthC
< 3 K/W
Admissible torque for mounting
Zulässiges Anzugsdrehmoment
M4
9 ± 10% lb.in.
1 ± 10% Nm
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
TIP120 ... TIP122
C2
Equivalent Circuit – Ersatzschaltbild
T
1
T
E
B
2
C
B1
T1
T2
E2
2
1
2
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
http://www.diotec.com/
© Diotec Semiconductor AG