TIP125 ... TIP127 TIP125 ... TIP127 Si-Epitaxial Planar Darlington Power Transistors Si-Epitaxial Planar Darlington-Leistungs-Transistoren PNP PNP Version 2006-10-17 Max. power dissipation with cooling Max. Verlustleistung mit Kühlung 4 3 3.8 Type Typ 13.2 1 2 3 3.4 15.7 10±0.2 1.5 0.9 2.54 Dimensions - Maße [mm] 1=B 2/4 = C 3=E 65 W Collector current Kollektorstrom 5A Plastic case Kunststoffgehäuse TO-220AB Weight approx. Gewicht ca. 2.2 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) TIP125 TIP126 TIP127 Collector-Emitter-volt. – Kollektor-Emitter-Spg. B open - VCEO 60 V 80 V 100 V Collector-Base-voltage – Kollektor-Basis-Spg. E open - VCBO 60 V 80 V 100 V Emitter-Base-voltage – Emitter-Basis-Spannung C open - VEBO 5V Ptot Ptot 2 W 1) 65 W Collector current – Kollektorstrom (dc) - IC 5A Peak Collector current – Kollektor-Spitzenstrom - ICM 8A Base current – Basisstrom (dc) - IB 120 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Power dissipation – Verlustleistung without cooling – ohne Kühlung with cooling – mit Kühlung TA = 25°C TC = 25°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. hFE hFE 1000 1000 – – – – hfe 4 DC current gain – Kollektor-Basis-Stromverhältnis 2) - IC = 0.5 A, - VCE = 3 V - IC = 3 A, - VCE = 3 V Small signal current gain – Kleinsignal-Stromverstärkung - IC = 3 A, - VCE = 4 V, f = 1 MHz 1 2 Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gültig wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 TIP125 ... TIP127 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. - VCEsat - VCEsat – – – – 2V 4V - VBE – – 2.5 V - ICEO - ICEO - ICEO – – – – – – 500 nA 500 nA 500 nA - ICBO - ICBO - ICBO – – – – – – 200 nA 200 nA 200 nA CCB0 – – 200 pF Collector-Emitter saturation volt. – Kollektor-Emitter-Sättigungsspg. 2) - IC = 3 A, IB = 12 mA - IC = 5 A, IB = 20 mA Base-Emitter voltage – Basis-Emitter-Spannung 2) - IC = 3 A, - VCE = 3 V Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom - VCE = 30 V, (B open) - VCE = 40 V, (B open) - VCE = 50 V, (B open) TIP125 TIP126 TIP127 Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 60 V, (E open) - VCB = 80 V, (E open) - VCB = 100 V, (E open) TIP125 TIP126 TIP127 Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE = ie = 0, f = 100 kHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 63 K/W 1) Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse RthC < 3 K/W Admissible torque for mounting Zulässiges Anzugsdrehmoment M4 9 ± 10% lb.in. 1 ± 10% Nm Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren TIP120 ... TIP122 C2 Equivalent Circuit – Ersatzschaltbild T 1 T E B 2 C B1 T1 T2 E2 2 1 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden http://www.diotec.com/ © Diotec Semiconductor AG