DYNEX PT60QHX45

PT60QHx45
PT60QHx45
Pulse Power Thyristor Switch
Preliminary Information
Replaces February 2000 version, DS5267-1.3
DS5267-1.4 April 2000
APPLICATIONS
●
Pulse Power
●
Crowbars
●
Ignitron Replacement
KEY PARAMETERS
4500V
VDRM
IT(AV)
1000A
ITSM
22500A
dI/dt
10,000A/µs
FEATURES
●
Double Side Cooling
●
Fast Turn-on
●
Low Turn-on Losses
VOLTAGE RATINGS
Type Number
Repetitive Peak
Voltages
VDRM /VRRM
V
Conditions
4500/16
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 100mA,
VDRM, VRRM tp = 10ms
PT60QHx45
Outline type code: H.
See Package Details for further information.
Lower voltage grades available.
Fig.1 Package outline
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
Double Side Cooled
IT(AV)
Mean on-state current
Half wave resistive load, Tcase = 80oC
1000
A
IT(RMS)
RMS value
Tcase = 80oC
1570
A
1/6
PT60QHx45
SURGE RATINGS
Parameter
Symbol
ITSM
I2t
ITSM
I2t
Surge (non-repetitive) on-state current
I2t for fusing
Surge (non-repetitive) on-state current
Conditions
Max.
Units
10ms half sine; Tcase = 125oC
17.8
kA
VR = 50% VRRM - 1/4 sine
15.8 x 106
A2s
10ms half sine; Tcase = 125oC
22.5
kA
VR = 0
2.52 x 106
A2s
I2t for fusing
THERMAL AND MECHANICAL DATA
Conditions
Parameter
Symbol
Min.
Max.
Units
Rth(j-c)
Thermal resistance - junction to case
Double side cooled
dc
-
0.013
o
Rth(c-h)
Thermal resistance - case to heatsink
Clamping force 19.5kN
with mounting compound
Double side
-
0.003
o
On-state (conducting)
-
135
o
Reverse (blocking)
-
125
o
–55
125
o
18
22
kN
Typ.
Max.
Units
Tvj
Tstg
-
C/W
C/W
C
Virtual junction temperature
Storage temperature range
Clamping force
C
C
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Conditions
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
100
mA
dV/dt
Maximum linear rate of rise of off-state voltage
To 67% VDRM Tj = 125oC. Rgk ≤ 1.5Ω
-
175
V/µs
dI/dt
Rate of rise of on-state current
From 67% VDRM to 40kA
Gate source 60A
tr = 1.5µs to 1A, Tj = 25oC
-
10000
A/µs
VT(TO)
Threshold voltage
At Tvj = 125oC
-
1.5
V
On-state slope resistance
At Tvj = 125oC
-
0.67
mΩ
Typ.
Max.
Units
IRRM/IDRM
rT
Non-repetitive
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
2/6
Parameter
Conditions
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25oC
-
1.0
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25oC
-
3
A
PT60QHx45
ORDERING INFORMATION
PT
40Q
P
x
45
Lead length (x)
Pulse Power Thyristor
Device type
Package outline type code
lead length (see table, right)
Voltage x100
O
No lead
C
8"
200mm
D
10"
250mm
E
12"
300mm
F
16"
400mm
G
18"
450mm
H
20"
500mm
J
24"
600mm
K
30"
750mm
L
40"
1000mm
CURVES
5000
Measured under pulse conditions
1
2
Instantaneous on-state current, IT - (A)
4000
1: Tj = 25˚C Max
2: Tj = 125˚C Max
3000
2000
1000
0
1.0
2.0
3.0
4.0
Instantaneous on-state voltage, VT - (V)
5.0
Fig.2 Maximum (limit) on-state characteristics
3/6
PT60QHx45
Thermal impedance - (˚C/W)
0.1
Double side cooled
0.01
0.001
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
0.0001
0.001
0.01
0.1
Effective thermal resistance
Junction to case ˚C/W
Double side
0.0130
0.0141
0.0170
0.0200
1
Time - (s)
Fig.3 Maximum (limit) transient thermal impedance - junction to case
4/6
10
100
PT60QHx45
Package Details
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.60 ± 0.05 x 2.0 ± 0.1 deep (One in each electrode)
Cathode Aux. Tube
Gate Tube
15˚
52
Anode
26 ± 0.5
Ø100
Ø62.85
9.6
Ø62.85
Cathode
55
Nominal weight: 820g
Clamping force: 20kN ±10%
Package outine type code: H
5/6
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always
be followed.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
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