ESMT M11L416256SA

EliteMT
M11L416256SA
DRAM
256 K x 16 DRAM
EDO PAGE MODE
FEATURES
ORDERING INFORMATION - PACKAGE
X16 organization
EDO (Extended Data-Output) access mode
2 CAS Byte/Word Read/Write operation
Single 3.3V ( ± 10%) power supply
LVTTL-compatible inputs and outputs
512-cycle refresh in 8ms
Refresh modes : RAS only, CAS BEFORE RAS (CBR)
and HIDDEN capabilities
Self-refresh capability
JEDEC standard pinout
Key AC Parameter
-35
tRAC
tCAC
tRC
tPC
35
10
65
14
40-pin 400mil SOJ
44 / 40-pin 400mil TSOP (Type II)
PRODUCT NO.
PACKING
TYPE
COMMENTS
M11L416256SASOJ/TSOPII
35 TG
Pb-free
M11L416256SA35 JP
GENERAL DESCRIPTION
The M11L416256 series is a randomly accessed solid state memory, organized as 262,144 x 16 bits device. It offers
Extended Data-Output , 3.3V( ± 10%) single power supply. Access time (-35) , self-refresh and package type (SOJ, TSOP II)
are optional features of this family. All these family have CAS - before - RAS , RAS -only refresh and Hidden refresh
capabilities.
Two access modes are supported by this device: Byte access and Word access. Use only one of the two CAS and leave
the other staying high will result in a BYTE access. WORD access happens when two CAS ( CASL , CASH ) are used.
CASL transiting low during READ or WRITE cycle will output or input data into the lower byte (IO0~IO7), and CASH
transiting low will output or input data into the upper byte (IO8~15).
PIN ASSIGNMENT
SOJ Top View
VCC
I/O0
I/O1
I/O2
I/O3
VC C
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RA S
NC
A0
A1
A2
A3
VC C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Elite Memory Technology Inc
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
TSOP (TypeII) Top View
VS S
VCC
I/O1 5
I/O0
I/O1 4
I/O1
I/O1 3
I/O2
I/O1 2
I/O3
VS S
VC C
I/O1 1
I/O1 0
I/O9
I/O8
NC
CASL
CASH
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
OE
RA S
A8
NC
A7
A0
A6
A1
A5
A2
A4
A3
VS S
VC C
1
2
3
4
5
6
7
8
9
10
40
39
38
37
36
35
34
33
32
31
VS S
11
12
13
14
15
16
17
18
19
20
30
29
28
27
26
25
24
23
22
21
NC
I/O1 5
I/O1 4
I/O1 3
I/O1 2
VS S
I/O1 1
I/O1 0
I/O 9
I/O 8
CASL
CASH
OE
A8
A7
A6
A5
A4
VS S
Publication Date: Aug. 2005
Revision : 1.4
1/16
EliteMT
M11L416256SA
FUNCTIONAL BLOCK DIAGRAM
WE
DATA-IN BUFFER
RAS
CONTROL
LOGIC
CASL
16
CASH
CLOCK
GENERATOR
9
DATA-OUT
BUFFER
COLUMN
ADDRESS
BUFFER
9
A0
OE
COLUMN
DECODER
16
512
A1
16
SENSE AMPLIFIERS
I/O GATING 8
REFRESH
CONTROLER
A2
IO0
:
IO15
A3
512 x 16
A4
REFRESH
COUNTER
A5
A7
99
A8
9
ROW.
ADDRESS
BUFFERS(9)
9
ROW
DECODER
A6
512 x 512 x 16
MEMORY
ARRAY
512
VCC
VBB GENERATOR
VSS
PIN DESCRIPTIONS
PIN NO.
PIN NAME
TYPE
16~19,22~26
A0~A8
Input
Address Input
Row Address : A0~A8
Column Address : A0~A8
14
RAS
Input
Row Address Strobe
28
CASH
Input
Column Address Strobe / Upper Byte Control
29
CASL
Input
Column Address Strobe / Lower Byte Control
13
WE
Input
Write Enable
27
OE
Input
Output Enable
2~5,7~10,31~34,36~39
I/O0 ~ I/O15
Input / Output
1,6,20
VCC
Supply
Power, 3.3V
21,35,40
VSS
Ground
Ground
11,12,15,30
NC
-
Elite Memory Technology Inc
DESCRIPTION
Data Input / Output
No Connect
Publication Date: Aug. 2005
Revision : 1.4
2/16
EliteMT
M11L416256SA
ABSOLUTE MAXIMUM RATINGS
Voltage on Any pin Relative to Vss … ……-0.5V to +4.6V
Operating Temperature, TA (ambient) ….0 °C to +70 °C
Storage Temperature (plastic) ……….-55 °C to +150 °C
Power Dissipation …………………………………0.8W
Short Circuit Output Current ……………………50mA
Permanent device damage may occur if “Absolute
Maximum Ratings” are exceeded. This is a stress rating
only, and functional operation of the device above those
conditions indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED
OPERATING CONDITIONS (0 °C ≤ TA ≤ 70 °C ; VCC = 3.3V ± 10% unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
MAX
UNITS NOTES
Supply Voltage
VCC
3.0
3.6
V
Supply Voltage
VSS
0
0
V
Input High Voltage
VIH
2.0
VCC +0.3
V
1
Input Low Voltage
VIL
-0.3
0.8
V
1
Input Leakage Current
0V ≤ VIN ≤ VIH(max)
ILI
-10
10
μA
Output Leakage Current
0V ≤ VOUT ≤ VCC
Output(s) disable
ILO
-10
10
μA
Output High Voltage
IOH = -2 mA
VOH
2.4
-
V
Output Low Voltage
IOL = 2 mA
VOL
-
0.4
V
1
Note : 1.All Voltages referenced to VSS
PARAMETER
CONDITIONS
SYMBOL
MAX
UNITS NOTES
-35
Operating Current
RAS , CAS cycling , tRC =min
ICC1
Standby Current
TTL interface , RAS , CAS = VIH ,
DOUT =High-Z
ICC2
CMOS interface, RAS , CAS ≥ VCC-0.2V
150
mA
4
mA
2
mA
1,2
RAS only refresh Current
tRC = min
ICC3
150
mA
2
EDO Page Mode Current
tPC = min
ICC4
150
mA
1,3
Standby Current
RAS =VIH, CAS = VIL
ICC5
5
mA
1
CAS Before RAS
Refresh
Current
tRC = min
ICC6
150
mA
Battery Backup Current
(S-ver. only)
RAS , CAS ≤ 0.2V, DOUT = High-Z,
CMOS interface
ICC7
400
μA
ICC8
400
μA
Self Refresh Current
(S-ver. only)
RAS = CAS = VIL,
WE = OE = A0~A8 = VCC -0.2 or 0.2V
DQ0~DQ15 = VCC -0.2, 0.2V or open
Note : 1. ICC max is specified at the output open condition.
2. Address can be changed twice or less while RAS =VIL .
3. Address can be changed once or less while CAS =VIH .
Elite Memory Technology Inc
Publication Date: Aug. 2005
Revision : 1.4
3/16
EliteMT
M11L416256SA
CAPACITANCE (Ta = 25 °C , VCC = 3.3V ± 10%)
PARAMETER
SYMBOL
TYP
MAX
UNIT
Input Capacitance (address)
CI1
-
5
pF
Input Capacitance ( RAS , CASH , CASL , WE , OE )
CI2
-
7
pF
CI / O
-
10
pF
Output capacitance (I/O0~I/O15)
AC ELECTRICAL CHARACTERISTICS (Ta = 0 to 70 °C , VCC =3.3V ± 10%, VSS = 0V) (note 14)
Test Conditions
Input timing reference levels : 0.8V, 2.0V
Output reference level : VOL= 0.8V, VOH=2.0V
Output Load : 2TTL gate + CL (50pF)
Assumed tT = 2ns
PARAMETER
-35
SYMBOL
MIN
UNIT
NOTES
MAX
tRC
65
ns
tRWC
95
ns
tPC
14
ns
22
EDO-Page-Mode Read-Write Cycle
Time
tPCM
42
ns
22
Access Time From RAS
tRAC
35
ns
4
Access Time From CAS
tCAC
10
ns
5,20
Access Time From OE
tOAC
10
ns
13,20
Access Time From Column Address
tAA
18
ns
Access Time From CAS Precharge
tACP
20
ns
RAS Pulse Width
tRAS
35
10K
ns
RAS Pulse Width (EDO Page Mode)
tRASC
35
100K
ns
RAS Hold Time
tRSH
10
ns
RAS Precharge Time
tRP
25
ns
CAS Pulse Width
tCAS
5
CAS Hold Time
tCSH
CAS Precharge Time
Read or Write Cycle Time
Read Write Cycle Time
EDO-Page-Mode Read or Write Cycle
Time
20
25
ns
24
30
ns
19
tCP
5
ns
6,23
RAS to CAS Delay Time
tRCD
10
ns
7,18
CAS to RAS Precharge Time
tCRP
5
ns
19
Row Address Setup Time
tASR
0
ns
Row Address Hold Time
tRAH
5
RAS to Column Address Delay Time
tRAD
8
Column Address Setup Time
tASC
Column Address Hold Time
tCAH
10K
25
ns
ns
8
0
ns
18
5
ns
18
tAR
30
ns
Column Address to RAS Lead Time
tRAL
18
ns
Read Command Setup Time
tRCS
0
Column Address Hold Time (Reference
to RAS )
Elite Memory Technology Inc
17
15,18
Publication Date: Aug. 2005
Revision : 1.4
4/16
EliteMT
M11L416256SA
(Continued)
PARAMETER
-35
SYMBOL
MIN
UNIT
NOTES
MAX
Read Command Hold Time Reference to CAS
tRCH
0
ns
9,15,19
Read Command Hold Time Reference to RAS
tRRH
0
ns
9
CAS to Output in Low-Z
tCLZ
3
ns
20
tOFF1
3
15
ns
10,17,20
8
ns
17,26
Output Buffer Turn-off Delay From CAS or
RAS
Output Buffer Turn-off to OE
tOFF2
Write Command Setup Time
tWCS
0
ns
11,15,18
Write Command Hold Time
tWCH
5
ns
15,25
Write Command Hold Time(Reference to RAS )
tWCR
30
ns
15
Write Command Pulse Width
tWP
5
ns
15
Write Command to RAS Lead Time
tRWL
9
ns
15
Write Command to CAS Lead Time
tCWL
7
ns
15,19
Data-in Setup Time
tDS
0
ns
12,20
Data-in Hold Time
tDH
5
ns
12,20
Data-in Hold Time (Reference to RAS )
tDHR
30
ns
RAS to WE Delay Time
tRWD
51
ns
11
Column Address to WE Delay Time
tAWD
34
ns
11
CAS to WE Delay Time
tCWD
26
ns
11,18
Transition Time (rise or fall)
tT
2.5
50
ns
2,3
Refresh Period (512 cycles)
tREF
8
ms
RAS to CAS Precharge Time
tRPC
10
ns
CAS Setup Time(CBR REFRESH)
tCSR
10
ns
1,18
CAS Hold Time(CBR REFRESH)
tCHR
10
ns
1,19
OE Hold Time From WE During
Read-Mode-Write Cycle
tOEH
4
ns
16
OE Low to CAS High Setup Time
tOES
4
ns
OE High Hold Time From CAS High
tOEHC
2
ns
OE Precharge Time
tOEP
2
ns
OE Setup Prior to RAS During Hidden
Refresh Cycle
tORD
0
ns
Last CAS Going Low to First CAS
Returning High
tCLCH
5
ns
Data Output Hold After CAS Returning Low
tCOH
3
ns
Output Disable Delay From WE
tWHZ
3
Self Refresh RAS Low Pulse width
tRASS
100
μs
27,28
Self Refresh RAS High Precharge Time
tRPS
65
ns
27,28
Self Refresh CAS Hold Time
tCHS
-50
ns
27,28
Elite Memory Technology Inc
7
21
ns
Publication Date: Aug. 2005
Revision : 1.4
5/16
EliteMT
M11L416256SA
Notes :
1.
Enables on-chip refresh and address counters.
2.
VIH(min) and VIL(max) are reference levels for
measuring timing of input signals. Transition times
are measured between VIH and VIL.
3.
In addition to meet the transition rate specification,
all input signals must transit between VIH and VIL in a
monotonic manner.
4.
Assume that tRCD < tRCD(max). If tRCD is greater than
the maximum recommended value shown in this
table, tRAC will increase by the amount that tRCD
exceeds the value shown.
5.
Assume that tRCD ≥ tRCD (max)
6.
If CAS is low at the falling edge of RAS , data-out
will be maintained from the previous cycle. To initiate
a new cycle and clear the data-out buffer, CAS and
RAS must be pulsed high.
7.
Operation within the tRCD limit ensures that tRCD
(max) can be met, tRCD (max) is specified as a
reference point only ; if tRCD is greater than the
specified tRCD (max) limit, access time is controlled
by tCAC.
8.
Operation within the tRAD limit ensures that tRAD(max)
can be met. tRAD(max) is specified as a reference
point only ; if tRAD is greater than the specified tRAD
(max) limit, access time is controlled by tAA.
9.
Either tRCH or tRRH must be satisfied for a READ
cycle.
10.
tOFF1(max) defines the time at which the output
achieves the open circuit condition ; it is not a
reference to VOH or VOL.
11.
tWCS, tRWD, tAWD and tCWD are restrictive operating
parameters
in
LATE
WRITE
and
READ-MODIFY-WRITE cycle only. If tWCS ≥
tWCS(min) , the cycle is an EARLY WRITE cycle and
the data output will remain an open circuit throughout
the entire cycle. If tRWD ≥ tRWD(min) , tAWD ≥ tAWD(min)
and tCWD ≥ tCWD(min) , the cycle is READ-WRITE and
the data output will contain data read from the
selected cell. If neither of the above conditions is
met, the state of I/O (at access time and until CAS
and RAS or OE go back to VIH ) is indeterminate.
OE held high and WE taken low after CAS
goes low result in a LATE WRITE ( OE -controlled)
cycle.
Elite Memory Technology Inc
12. Those parameters are referenced to CAS leading
edge in EARLY WRITE cycles and WE leading edge
in LATE WRITE or READ-MODIFY- WRITE cycles.
13. During a READ cycle, if OE is low then taken HIGH
before CAS goes high, I/O goes open, if OE is tied
permanently
low,
a
LATE
WRITE
or
READ-MODIFY-WRITE operation is not possible.
14. An initial pause of 200 μ s is required after power-up
followed by eight RAS refresh cycles ( RAS only or
CBR) before proper device operation is assured. The
eight RAS cycle wake-ups should be repeated any
time the tREF refresh requirement is exceeded.
15. WRITE command is defined as WE going low.
16. LATE WRITE and READ-MODIFY-WRITE cycles must
have both tOFF2 and tOEH met ( OE high during
WRITE cycle) in order to ensure that the output
buffers will be open during the WRITE cycles.
17. The I/Os open during READ cycles once tOFF1 or tOFF2
occur.
18. Referenced to the earlier CAS falling edge.
19. Referenced to the latter CAS rising edge.
20. Output parameter (I/O) is referenced to corresponding
CAS input, IO0~7 by CASL and IO8~15 by
CASH .
21. Last falling CAS edge to first rising CAS edge.
22. Last rising CAS edge to next cycle’s last rising
CAS edge.
23. Last rising CAS edge to first falling CAS edge.
24. Each CAS must meet minimum pulse width.
25. Referenced to the latter CAS falling edge.
26. All IOs controlled by OE , regardless CASL and
CASH .
27. Self refresh mode is initiated by performing a CBR
refresh cycle and holding RAS low for the specified
tRASS. Self refresh mode is terminated by rising RAS
high for a minimum time of tRPS.
28. For all of the refresh mode expect the distributed CBR
refresh mode, all rows must be refreshed within the
refresh rate before and after self refresh.
Publication Date: Aug. 2005
Revision : 1.4
6/16
EliteMT
M11L416256SA
TRUTH TABLE
FUNCTION
RAS
CASL CASH
WE
OE
ADDRESSES
ROW
COL
DQS
NOTES
Standby
H
H X
H X
X
X
X
X
Read : Word
L
L
L
H
L
ROW
COL
Data-Out
Read : Lower Byte
L
L
H
H
L
ROW
COL
Lower Byte, Data-Out
Read : Upper Byte
L
H
L
H
L
ROW
COL
Upper Byte, Data-Out
Write : Word (Early Write)
L
L
L
L
X
ROW
COL
Data-In
Write : Lower Byte (Early)
L
L
H
L
X
ROW
COL
Lower Byte, Data-In ,
Upper Byte, High-Z
Write : Upper Byte (Early)
L
H
L
L
X
ROW
COL
Lower Byte, High-Z ,
Upper Byte, Data-In
Read-Write
L
L
L
ROW
COL
Data-Out, Data-In
1st Cycle
EDO-Page-Mode
2nd Cycle
Read
Any Cycle
L
H L
H L
H
L
ROW
COL
Data-Out
2
L
H L
H L
H
L
COL
Data-Out
2
L
L H
L H
H
L
Data-Out
2
EDO-Page-Mode 1st Cycle
Write
2nd Cycle
L
H L
H L
L
X
COL
Data-In
1
L
H L
H L
L
X
COL
Data-In
1
EDO-Page-Mode 1st Cycle
Read-Write
2nd Cycle
L
H L
H L
H L L H
COL
Data-Out, Data-In
1, 2
L
H L
H L
H L L H
COL
Data-Out, Data-In
1, 2
L H L
L
L
H
L
ROW
COL
Data-Out
L
H
H
X
X
ROW
CBR Refresh
H L
L
L
H
X
X
X
High-Z
3
Self-Refresh
H L
L
L
H
X
X
X
High-Z
3
Hidden Refresh
RAS -Only Refresh
H L L H
ROW
ROW
High-Z
1, 2
2
High-Z
*Note : 1. These WRITE cycles may also be BYTE WRITE cycles (either CASL or CASH active).
2. These READ cycles may also be BYTE READ cycles (either CASL or CASH active).
3. Only one CAS must be active ( CASL or CASH ).
Elite Memory Technology Inc
Publication Date: Aug. 2005
Revision : 1.4
7/16
EliteMT
M11L416256SA
READ CYCLE
tRC
tRAS
tRP
VIH
RAS VIL
tCSH
tCRP
CA SL ,C AS H
tRRH
tRSH
tCAS
tRCD
tCLCH
VIH
VIL
tAR
tRAD
tRAH
tASR
ADDR
VIH
VIL
tRAL
tCAH
tASC
ROW
ROW
COLUMN
tRCH
tRCS
WE
VIH
VIL
tAA
tRAC
tCAC
tCLZ
I/O
VO H
VO L
NO TE1
tOFF1
OPEN
VAL ID DATA
tO AC
OE
OPE N
tOFF2
VIH
VIL
EARLY WRITE CYCLE
tRC
tRAS
RAS
tCRP
CASL ,C ASH
tRP
VIH
VIL
tCSH
tRSH
tCAS
tRCD
tCLCH
VIH
VIL
tAR
tRAD
tRAH
tASR
ADDR
VIH
VIL
tRAL
tCAH
tASC
COLUMN
ROW
tWCS
ROW
tCWL
tRWL
tWCR
tWCH
tWP
WE
VIH
VIL
tDS
I/O
OE
VIH
VIL
tDHR
tDH
VAL ID DATA
VIH
VIL
DON'T CARE
UNDEFINED
Note: 1. tOFF1 is referenced from the rising edge of RAS or CAS , whichever occurs last.
Elite Memory Technology Inc
Publication Date: Aug. 2005
Revision : 1.4
8/16
EliteMT
M11L416256SA
READ WRITE CYCLE
(LATE WRITE and READ-MODIFY-WRITE CYCLES)
tRWC
t RAS
RAS
tCRP
CASL,CASH
tCSH
tRS H
tCAS,tCLCH
tRCD
VIH
VIL
tAR
tRAD
tRAH
tASR
ADDR
tRP
VIH
VIL
VIH
VIL
t RAL
t CAH
tASC
ROW
COLUMN
tRCS
WE
ROW
tCWL
tRWL
tWP
tRWD
tCWD
tAWD
VIH
VIL
tAA
tRAC
tCAC
I/O
VAL ID DO UT
OPEN
tO AC
OE
tDH
tDS
tCLZ
VI/O H
VI/O L
VALI D DIN
tOEH
tOFF 2
VIH
VIL
EDO-PAGE-MODE READ CYCLE
tRASC
RAS
tPC
tCSH
tRCD
tCRP
CASL ,C AS H
tRP
VIH
VIL
tCAS , tCLCH
(NOTE2)
tCAS,tCLCH
tCP
tRSH
tCAS, t CLCH
tCP
tCP
VIH
VIL
tAR
t RAD
tASR tRAH
ADDR
VIH
VIL
tRAL
tASC
ROW
tCAH
COLUMN
tASC
tASC
t CAH
tCAH
COLUMN
COLUMN
ROW
tRCH
tRCS
WE
VIH
VIL
tAA
t ACP
tCAC
tAA
tRAC
tCAC
VO H
I/O
VO L
tAA
tACP
tCAC
OPEN
VAL ID D ATA
tO AC
tOES
NO TE1
tCLZ
tCOH
tCLZ
OE
tRRH
VALID
DATA
tOFF 1
VAL ID D ATA
tOEHC
tO AC
OPEN
tOFF 2
tOFF 2
tOES
VIH
VIL
tOEP
DON'T CARE
UNDEFINED
*NOTE : 1. tOFF1 is referenced from the rising edge of RAS or CAS , whichever occurs last.
2.
tPC can be measured from falling edge of CAS to falling edge of CAS , or from rising edge of CAS to rising
edge of CAS . Both measurements must meet the tPC specification.
Elite Memory Technology Inc
Publication Date: Aug. 2005
Revision : 1.4
9/16
EliteMT
M11L416256SA
EDO-PAGE-MODE EARLY-WRITE CYCLE
tRASC
RAS
tRP
VIH
VIL
tCSH
tCRP
CASL ,CASH
tPC (NOTE1)
tCAS, tCLCH
tCP
tCAS,tCLCH
tRCD
tRSH
tCAS,tCLCH
tCP
tCP
VIH
VIL
tAR
tRAL
tCAH
tRAD
tASR
ADDR
VIH
VIL
tRAH
tCAH
tASC
COLUMN
ROW
tCAH
tASC
WE
COLUMN
COLUMN
tCWL
tWCS
tASC
tCWL
tWCH
tWP
tWCS
tWCH
tWP
ROW
tCWL
tWCH
tWCS
tWP
VIH
VIL
tWCR
tDHR
tDH
tDS
I/O
VIH
VIL
OE
VIH
VIL
tRWL
tDS
VAL ID DATA
tDH
tDH
tDS
VAL ID DATA
VAL ID DATA
EDO-PAGE-MODE READ-WRITE CYCLE
(LATE WRITE and READ-MODIFY-WRITE CYCLES)
tRASC
RAS
tRP
VIH
VIL
tCSH
tCRP
CASL ,CASH
tCAS,tCLCH
tRCD
tCP
tPCM
tCAS, tCLCH
tRSH
tCP
tCAS,tCLCH
tASC
tRAL
tCAH
tAR
tRAD
tASR
ADDR
tCP
VIH
VIL
VIH
VIL
tRAH
tCAH
tASC
ROW
tASC tCAH
COLUMN
COLUMN
COLUMN
ROW
tRWD
tRCS
tRWL
tCWL
tCWL
tWP
tAWD
tCWD
WE
tCWD
tAA
tAA
tDH
tACP
tDS
tCAC
tCLZ
VI/O H
VI/O L
tAA
tDH
tDH
tACP
tDS
tCLZ
VALID VALI D
DOUT
DIN
VALI D VALI D
DOUT
D IN
tOFF
tOFF2
tO AC
tDS
tCAC
tCAC
tCLZ
VALI D VALI D
DOUT
DIN
tO AC
OE
tAWD
tAWD
tCWD
VIH
VIL
tRAC
I/O
tCWL
tWP
tWP
2
tO AC
tOFF2
tOEH
VIH
VIL
DON'T CARE
UNDEFINED
Note : 1. tPC can be measured from falling edge to falling edge of CAS , or from rising edge to rising edge of CAS . Both
measurements must meet the tPC specification.
Elite Memory Technology Inc
Publication Date: Aug. 2005
Revision : 1.4
10/16
EliteMT
M11L416256SA
EDO-PAGE-MODE READ-EARLY-WRITE CYCLE
(Psuedo READ-MODIFY-WRITE)
tRASC
RAS
tRP
VIH
VIL
tCSH
CASL ,C AS H
tCP
tPC
tCAS
tRCD
tCRP
tCP
tRSH
tCAS
tCP
tCAS
tCP
VIH
VIL
tAR
tRAL
tRAD
tASC
tASR tRAH
ADDR
VIH
VIL
tCAH
tAS C
COLUMN(A)
ROW
tCAH
tRCH
ROW
tWCH
tWCS
VIH
VIL
tAA
tAA
tRAC
VI/OH
VI/OL
tWHZ
tACP
tCAC
I/O
tCAH
COLUMN(N)
COLUMN(B)
tRCS
WE
tASC
VA L ID DATA( A)
OPEN
tDS
tCAC
tCOH
VALID
DATA(B )
tDH
VALID
DATA IN
tO AC
OE
VIH
VIL
RAS ONLY REFRESH CYCLE
(ADDR = A0~A8 ; OE , WE = DON’T CARE)
tRC
tRP
tRAS
RAS
VIH
VIL
CASL,CASH
VIH
VIL
tCRP
tRPC
tASR
ADDR
I/O
VIH
VIL
VO H
VO L
tRAH
ROW
ROW
OPE N
DON'T CARE
UNDEFINED
Elite Memory Technology Inc
Publication Date: Aug. 2005
Revision : 1.4
11/16
EliteMT
M11L416256SA
CBR REFRESH CYCLE
(A0~A8 ; OE = DON’T CARE)
tRP
RAS
tRPC
tCP
CASL ,C AS H
tRAS
tRP
tRAS
VIH
VIL
tCSR
tCSR
tRPC
tCHR
tCHR
VIH
VIL
OPEN
I/O
tRCH
WE
VIH
VIL
HIDDEN REFRESH CYCLE
( WE = HIGH ; OE = LOW)
(READ)
(REF RESH)
tRAS
RAS
tRAS
VIH
VIL
tCRP
CASL ,C AS H
tRP
tRCD
tRSH
tCHR
VIH
VIL
tAR
tRAD
tRAH
tASR
ADDR
VIH
VIL
tASC
ROW
tRAL
tCAH
COLUMN
tAA
NO TE1
tRAC
tOFF1
tCAC
tCLZ
I/O
OE
VO H
VO L
VIH
VIL
VALID DATA
OPEN
tO AC
tORD
OPEN
tOFF2
DON'T CARE
UNDEFINED
Note : 1. tOFF1 is reference from the rising edge of RAS or CAS , whichever occurs last.
Elite Memory Technology Inc
Publication Date: Aug. 2005
Revision : 1.4
12/16
EliteMT
M11L416256SA
SELF REFRESH CYCLE
( OE = DON’T CARE)
tRP
RAS
tRPC
CASL ,CASH
tRASS
tRPS
VIH
VIL
tRPC
tCSR
tCRP
tCHS
VIH
VIL
tCP
tASR
ADDR
I/O
VIH
VIL
VO H
VO L
OPEN
tRCH
WE
VIH
VIL
DON'T CARE
UNDEFINED
Elite Memory Technology Inc
Publication Date: Aug. 2005
Revision : 1.4
13/16
EliteMT
M11L416256SA
PACKING
DIMENSIONS
40-LEAD
SOJ(400mil)
SECTION
I
b
2
0.050" Max.
D
21
E1
E
40
b
Detail "A"
20
SECTION
0.024" Min.
E
2
1
e
R
θ1
Seating Plain
Detail "A"
A
A1
A2
c
1
II
b
2
0.050" Max.
D
21
E1
E
40
b
Detail "A"
20
A
A1
A2
b
b2
c
e
0.024" Min.
E
2
1
Symbol
e
R
θ1
Seating Plain
Detail "A"
A
A1
A2
c
1
Dimension in mm
Min
Norm
Max
3.250
3.510
3.760
2.080
2.790 REF
0.380
0.460
0.560
0.635 REF
Dimension in inch
Symbol
Dimension in mm
Min
Norm
Max
Min
Norm
Max
0.128
0.138
0.148
E
10.920 11.176 11.430
0.082
E1
10.030 10.160 10.290
0.110 REF
E2
9.40 BSC
0.015
0.018
0.022
R1
0.760
0.890
1.020
0.025 REF
θ 1
0°
10°
Dimension in inch
Min
Norm
Max
0.430
0.440
0.450
0.395
0.400
0.405
0.370 BSC
0.030
0.035
0.040
0.180
0.250
0.360
1.270 BSC
0.007
0.010
0.014
0.050 BSC
1.02
Elite Memory Technology Inc
D
25.91
26.040 26.290
0°
10°
1.025
1.035
Publication Date: Aug. 2005
Revision : 1.4
14/16
EliteMT
M11L416256SA
PACKING
DIMENSIONS
40 / 44-LEAD
TSOP(II)
Symbol
DRAM(400mil)
Dimension in mm
Min
Norm
Max
A
Dimension in inch
Min
Norm
1.20
A1
0.05
A2
0.95
b
0.30
1.00
0.047
0.15
0.002
1.05
0.037
0.45
0.012
0.006
0.039
0.042
0.018
b1
0.30
0.40
0.012
c
0.12
0.21
0.005
0.008
c1
0.10
0.16
0.004
0.006
D
18.28
18.54
0.720
ZD
0.35
Max
18.41
0.805
REF
0.014
0.725
0.016
0.730
0.0317 REF
E
11.56
11.76
11.96
0.455
0.463
0.471
E1
10.03
10.16
10.29
0.395
0.400
0.4
L
0.40
0.59
0.69
0.016
0.023
0.027
L1
0.80 REF
e
0.80 BSC
0.0315 BSC
θ
O° ~ 7° REF
O° ~ 7° REF
Elite Memory Technology Inc
0.031
REF
Publication Date: Aug. 2005
Revision : 1.4
15/16
EliteMT
M11L416256SA
Important Notice
All rights reserved.
No part of this document may be reproduced or duplicated in any form or by any
means without the prior permission of EliteMT.
The contents contained in this document are believed to be accurate at the time of
publication. EliteMT assumes no responsibility for any error in this document, and
reserves the right to change the products or specification in this document without
notice.
The information contained herein is presented only as a guide or examples for the
application of our products. No responsibility is assumed by EliteMT for any
infringement of patents, copyrights, or other intellectual property rights of third
parties which may result from its use. No license, either express , implied or
otherwise, is granted under any patents, copyrights or other intellectual property
rights of EliteMT or others.
Any semiconductor devices may have inherently a certain rate of failure. To
minimize risks associated with customer's application, adequate design and
operating safeguards against injury, damage, or loss from such failure, should be
provided by the customer when making application designs.
EliteMT's products are not authorized for use in critical applications such as, but not
limited to, life support devices or system, where failure or abnormal operation may
directly affect human lives or cause physical injury or property damage. If products
described here are to be used for such kinds of application, purchaser must do its
own quality assurance testing appropriate to such applications.
Elite Memory Technology Inc
Publication Date: Aug. 2005
Revision : 1.4
16/16