FMM5805X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31.0dBm (Typ.) High Gain: G1dB = 21.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5805X is a high-gain, high power, 3-stage MMIC amplifier designed for operation in the17.5-20.0 GHz frequency range. This amplifier has an input and output designed for use in 50Ω systems.This device is well suited for point-to-point communication applications. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Symbol Condition Rating Unit Drain Voltage VDD 10 V Gate Voltage VGG -3.0 V Input Power Pin 22 dBm Storage Temperature Tstg -65 to +175 °C Operating Backside Temperature Top -40 to +85 °C Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDD) should not exceed 6 volts. 2. The forward and reverse gate currents should not exceed 4.0 and -0.33 mA respectively. 3. This product should be hermetically packaged ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25°C) Item Frequency Range Symbol Conditions Min. f Output Power at 1 dB G.C.P. P1dB Power Gain at 1 dB G.C.P. G1dB Drain Current Iddrf Limits Typ. Max. Unit GHz 17.5 - 20.0 29 31 - dBm 16 21 26 dB - 700 950 mA ηadd - 30 - % Input Return Loss RLi - -12 - dB Output Return Loss RLo - -8 - dB Power-Added Efficiency VDD = 6V IDD = 650mA (Typ.) ZS = ZL = 50Ω Note: RF parameter sample size 10pcs./wafer. Criteria (accept/reject)=(0/1) G.C.P.: Gain Compression Point Edition 1.0 May 2000 1 FMM5805X 17.5-20GHz Power Amplifier MMIC OUTPUT POWER vs. IMD P1dB, G1dB vs. FREQUENCY -15 34 VDD = 6V IDD = 650mA -20 P1dB 20GHz IM3 -25 18GHz IM3 30 -30 28 -35 IMD (dBc) P1dB (dBm), G1dB (dB) 32 VDD = 6V IDD = 650mA 26 24 -40 22 -50 20 -55 G1dB 20GHz IM5 -45 18GHz IM5 -60 18 -65 12 17 17.5 18 18.5 19 19.5 20 20.5 21 Frequency (GHz) 14 16 18 20 22 24 26 Total Output Power (dBm) ASSEMBLY DRAWING VGG VDD 0.15µF 0.15µF 220pF 220pF RFout RFin Gap to be minimized at the output 220pF 220pF 0.15µF 0.15µF VGG VDD 2 28 30 FMM5805X 17.5-20GHz Power Amplifier MMIC BONDING LAYOUT VGG1 VDD1 VDD2 VDD4 RFout RF in VDD5 VDD3 VGG2 S-PARAMETERS VDD = 6V, IDS = 650mA FREQUENCY S11 (MHZ) MAG ANG 14000 14500 15000 15500 16000 16500 17000 17500 18000 18500 19000 19500 20000 20500 21000 21500 22000 22500 23000 .672 .596 .502 .402 .297 .225 .212 .256 .321 .364 .405 .440 .458 .431 .328 .116 .209 .457 .598 144.5 138.7 133.1 132.5 136.1 147.8 169.1 -172.7 -169.9 -169.8 -172.0 -179.7 173.4 161.5 145.7 138.9 -112.3 -133.3 -154.3 S21 S12 S22 MAG ANG MAG ANG MAG ANG 3.454 4.871 7.047 7.936 11.029 12.663 12.727 12.061 11.271 10.470 10.272 9.732 9.580 9.979 10.109 9.421 7.116 4.684 2.873 165.4 134.6 106.3 68.9 28.2 -13.5 -58.7 -97.8 -133.1 -167.0 159.4 129.4 92.7 55.9 14.0 -36.9 -92.0 -139.4 176.7 .006 .006 .006 .008 .007 .007 .008 .008 .009 .010 .010 .010 .009 .007 .007 .006 .007 .009 .011 -90.6 -84.4 -90.4 -101.5 -95.3 -96.5 -93.8 -90.3 -92.5 -92.2 -100.8 -109.5 -107.3 -115.9 -110.0 -91.9 -84.0 -73.9 -77.9 .821 .754 .659 .536 .399 .316 .357 .471 .555 .585 .578 .533 .471 .388 .325 .282 .224 .186 .162 114.2 102.2 87.0 67.3 34.4 -19.3 -77.0 -117.9 -144.7 -163.0 -178.4 170.5 162.5 156.4 156.3 158.9 165.0 178.1 -165.7 Download S-Parameters, click here 3 FMM5805X 17.5-20GHz Power Amplifier MMIC CHIP OUTLINE 0 VGG1 VDD1 VGG1 VDD2 VGG1 VDD4 110 680 710 1160 2210 2940 Unit: µm 3360 2630 2520 2460 2395 2250 1315 RFout 1115 RFin 110 235 170 0 0 0 110 710 1160 2210 2940 VGG2 VDD3 VGG2 VDD5 3470 Chip Size: 3.47±30µm x 2.63±30µm VGG1, VGG2: One bonding is available Chip Thickness: 70±20µm Pad Dimensions: 1. DC 80µm x 80µm 2. RF 120µm x 80µm For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not ingest. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0699M200 4