EUDYNA FLU10XM

FLU10XM
L-Band Medium & High Power GaAs FET
FEATURES
• High Output Power: P1dB=29.5dBm (Typ.)
• High Gain: G1dB=14.5dB (Typ.)
• High PAE: ηadd=47% (Typ.)
• Hermetic Metal/Ceramic (SMT) Package
• Tape and Reel Available
DESCRIPTION
The FLU10XM is a GaAs FET designed for base station applications in the
PCN/PCS frequency range. This is a new product series that uses a surface
mount package that has been optimized for high volume cost driven applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
4.16
W
Total Power Dissipation
PT
Tc = 25°C
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
+175
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 4.8 and -0.5 mA respectively with
gate resistence of 400Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Conditions
Min.
Limits
Typ. Max.
Unit
Drain Current
IDSS
VDS = 5V, VGS=0V
-
300
450
mA
Transconductance
gm
VDS = 5V, IDS=200mA
-
150
-
mS
Pinch-Off Voltage
Vp
VDS = 5V, IDS=15mA
-1.0
-2.0
-3.5
V
IGS = -15µA
-5
-
-
V
28.5
29.5
-
dBm
13.5
14.5
-
dB
-
47
-
%
-
25
36
°C/W
Gate-Source Breakdown Voltage
VGSO
Output Power at 1 dB G.C.P.
P1dB
Power Gain at 1 dB G.C.P.
G1dB
Power Added Efficiency
ηadd
VDS = 10V
f=2.0 GHz
IDS=0.6IDSS
Thermal Resistance
Rth
Channel to Case
Case Style: XM
G.C.P.: Gain Compression Point
Note: The RF parameters are measured on a lot basis by sample testing
at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested.
Edition 1.2
July 1999
1
FLU10XM
L-Band Medium & High Power GaAs FET
POWER DERATING CURVE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
Drain Current (mA)
4
3
2
1
VGS =0V
300
-0.5V
200
-1.0V
100
-1.5V
-2.0V
50
100
150
0
200
2
4
6
OUTPUT POWER vs. INPUT POWER
VDS=10V
IDS ≈ 0.6IDSS
f = 2.0 GHz
30
50
28
Pout
26
40
24
30
22
20
ηadd
10
20
8
8
10
Drain-Source Voltage (V)
Case Temperature (°C)
10
12 14 16
Input Power (dBm)
2
18
ηadd (%)
0
Output Power (dBm)
Total Power Dissipation (W)
5
FLU10XM
L-Band Medium & High Power GaAs FET
S11
S22
+j50
S21
S12
+90°
+j100
+j25
0.5 GHz
1
+j250
+j10
4
0
25
50Ω
100
180°
250
8
6
4
2
SCALE FOR |S21|
3
0.5 GHz
-j250
1
3
-j25
SCALE FOR |S12|
2
2
1
0.5 GHz
-j100
3
1
4
3
0°
5
5
-j10
2
0.5 GHz
5
5
.05
0.1
-90°
-j50
S11
S-PARAMETERS
VDS = 10V, IDS = 180mA
S21
S12
MAG
ANG
MAG
ANG
FREQUENCY
(MHZ)
MAG
ANG
S22
100
1.000
-17.7
11.904
167.3
.005
78.4
.535
-9.1
MAG
ANG
500
.922
-76.7
9.080
123.4
.020
43.2
.511
-46.1
1000
.864
-118.5
5.928
88.3
.026
14.5
.536
-74.7
1500
.841
-140.9
4.153
64.2
.028
4.8
.594
-94.0
2000
.825
-154.9
3.121
45.1
.028
-3.7
.654
-108.7
2500
.809
-164.9
2.498
28.4
.028
-12.0
.709
-120.9
3000
.783
-173.1
2.097
13.1
.028
-16.9
.755
-131.4
3500
.746
179.4
1.833
-1.9
.031
-20.5
.794
-140.9
4000
.692
172.0
1.655
-17.3
.034
-28.4
.830
-149.5
4500
.615
164.1
1.529
-33.6
.037
-36.3
.861
-157.3
5000
.507
156.6
1.429
-51.3
.042
-48.5
.886
-164.5
Download S-Parameters, click here
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FLU10XM
L-Band Medium & High Power GaAs FET
Case Style "XM"
Metal-Ceramic Hermetic Package
2.865
(0.112)
0.5
(0.020)
3.8±0.15
(0.150)
2.265
(0.089)
3.35
(0.132)
2.0±0.15
4.2±0.1
(0.165)
3
0.5
(0.020)
45°
4.4±0.15
(0.173)
1
4.0±0.15
(0.159)
0.7
(0.028)
2
3.13±0.15
0.7
(0.028)
1. Gate
2. Source
3. Drain
0.15±0.05
(0.006)
1.7±0.2
(0.067)
6.3
(0.248)
Unit: mm(inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
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