FUJITSU FMM5048GJ

FMM5048GJ
VSAT MMIC
FEATURES
•
•
•
•
•
•
High Output Power: P1dB = 36.0dBm(Typ.)
High Gain: G1dB = 26.0dB(Typ.)
Low In/Out VSWR
Broad Band: 13.75 ~ 14.5GHz
Impedance Matched Zin/Zout = 50Ω
Hermetically Sealed Package (12 X 15 X 3.5mm)
DESCRIPTION
The FMM5048GJ is a module that contains a two-stage amplifier,
internally matched, for standard communications in the 13.75 to 14.5GHz
frequency range. This product is well suited for VSAT applications as it
offers high power, high gain, and low VSWR.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25°C)
Parameter
Symbol
Condition
Rating
Unit
DC Input Voltage
VDD
12
V
DC Input Voltage
VGG
-7
V
Input Power
12
dBm
Storage Temperature
Pin
Tstg
-55 to +125
°C
Operating Case Temperature
Top
-55 to +85
°C
Tc = 25°C
Fujitsu recommends the following conditions for the reliable operation of GaAs modules:
1. The drain operating voltage (VDD) should not exceed 10 volts.
2. The gate operating voltage (VGG) should not exceed -5 volts.
ELECTRICAL CHARACTERISTICS (Case Temperature Ta = 25°C)
Item
Symbol
Condition
Min.
Limit
Typ. Max.
Unit
Output Power at 1dB G.C.P.
P1dB
35.0
36.0
-
dBm
Power Gain at 1dB G.C.P.
G1dB
23.0
26.0
-
dB
-
1.2
3.0
dB
-
2:1
2.5:1
-
Gain Flatness
∆G
VDD = 10V
VGG = -5V
f = 13.75 ~ 14.5GHz
Input VSWR
VSWRi
Output VSWR
VSWRo
-
3:1
3.5:1
-
DC Input Current
IDD
-
2.1
2.5
A
DC Input Current
IGG
-
6
12
mA
CASE STYLE: GJ
Edition 1.1
January 2001
G.C.P.: Gain Compression Point
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FMM5048GJ
VSAT MMIC
OUTPUT POWER vs. FREQUENCY
Pin=10dBm
Output Power (dBm)
36
7dBm
34
4dBm
32
Output Power (dBm)
36
2dBm
30
0dBm
34
32
30
30
28
20
26
10
-4
28
VDS=10V
f = 14.25 GHz
-2
0
2
4
6
8
10
Input Power (dBm)
13.75
14
14.25
14.5
Frequency (GHz)
RECOMMENDED BIAS CIRCUIT
1000pF
1000pF
50Ω
50Ω
3
2
RFin
1
VGG
VDD
4
5
RFout
6
50Ω
VGG
VDD
50Ω
1000pF
1000pF
Note: The R/C networks are recommended on the bias supply lines, close to the
package, to prevent video oscillations which could damage the module.
2
12
14
ηadd (%)
VDS = 10V
P1dB
OUTPUT POWER vs. INPUT POWER
FMM5048GJ
VSAT MMIC
S11
S22
+j50
+j100
14.3
+j25
14.1
14.1
+j250
14.5
+j10
14.3
10
14.1
13.9
14.1
13.9
14.3
14.7
14.5
14.3
14.7
0
S21
S12
+90°
14.7
13.9
180°
250
40
30
13.9
20
10
13.7
SCALE FOR |S21|
14.5
14.5
13.7
13.5GHZ
0°
13.5GHZ
13.5GHZ
-j10
SCALE FOR |S12|
13.5GHZ
-j250
-j25
-j100
-j50
.004
14.7
.006
.008
-90°
S-PARAMETERS
VDD = 10V, VGG = -5V
FREQUENCY
S11
(MHZ)
MAG
ANG
1350
1360
1370
1380
1390
1400
1410
1420
1430
1440
1450
1460
1470
.273
.275
.278
.263
.227
.145
.022
.118
.214
.257
.258
.244
.230
-65.1
-67.3
-71.8
-78.4
-89.5
-102.8
-97.8
24.0
6.2
-8.1
-17.8
-21.6
-21.4
MAG
S21
ANG
S12
MAG
ANG
S22
MAG
ANG
18.067
20.347
22.777
25.351
27.258
28.576
28.940
28.940
28.379
27.542
26.546
25.003
22.777
-103.9
-127.4
-152.9
-179.5
152.0
121.9
92.7
65.6
37.7
7.4
-22.0
-50.4
-76.9
.002
.001
.001
.002
.003
.005
.007
.008
.009
.009
.009
.009
.008
.421
.400
.402
.417
.421
.386
.322
.307
.342
.363
.375
.389
.404
-13.5
-89.7
-168.0
160.2
137.4
112.2
90.0
68.2
59.6
56.0
51.7
44.1
24.2
-128.4
-129.1
-131.7
-137.8
-148.5
-163.4
-174.7
180.0
163.0
132.0
99.4
67.7
42.0
Download S-Parameters, click here
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FMM5048GJ
VSAT MMIC
Case Style "GJ"
Metal-Ceramic Hermetic Package
4-R 1.2±0.15
(0.047)
3.5 Max.
(0.137)
3
4
2
5
1
6
1.3±0.15
(0.051)
7
(0.276)
3.8
(0.149)
7
(0.276)
11±0.15
(0.433)
15
(0.591)
6-0.3
(0.012)
7
INDEX
1Min.
(0.039)
0.9
(0.035)
6±0.15
(0.236)
12±0.15
(0.472)
1.
2.
3.
4.
5.
6.
7.
VDD
RFin
VGG
VGG
RFout
VDD
GND
Unit: mm(inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
FUJITSU MICROELECTRONICS EUROPE, GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone: +44 (0)1628 504800
FAX: +44 (0)1628 504888
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0500M200
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