ETC FMM5805X

FMM5805X
17.5-20GHz Power Amplifier MMIC
FEATURES
•
•
•
•
•
High Output Power: P1dB = 31.0dBm (Typ.)
High Gain: G1dB = 21.0dB (Typ.)
High PAE: ηadd = 30% (Typ.)
Impedance Matched Zin/Zout = 50Ω
0.25µm PHEMT Technology
DESCRIPTION
The FMM5805X is a high-gain, high power, 3-stage MMIC
amplifier designed for operation in the17.5-20.0 GHz
frequency range. This amplifier has an input and output
designed for use in 50Ω systems.This device is well suited
for point-to-point communication applications.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain Voltage
VDD
10
V
Gate Voltage
VGG
-3.0
V
Input Power
Pin
22
dBm
Storage Temperature
Tstg
-65 to +175
°C
Operating Backside Temperature
Top
-40 to +85
°C
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 6 volts.
2. The forward and reverse gate currents should not exceed 4.0 and -0.33 mA respectively.
3. This product should be hermetically packaged
ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25°C)
Item
Frequency Range
Symbol
Conditions
Min.
f
Output Power at 1 dB G.C.P.
P1dB
Power Gain at 1 dB G.C.P.
G1dB
Drain Current
Iddrf
Limits
Typ. Max.
Unit
GHz
17.5 - 20.0
29
31
-
dBm
16
21
26
dB
-
700
950
mA
ηadd
-
30
-
%
Input Return Loss
RLi
-
-12
-
dB
Output Return Loss
RLo
-
-8
-
dB
Power-Added Efficiency
VDD = 6V
IDD = 650mA (Typ.)
ZS = ZL = 50Ω
Note: RF parameter sample size 10pcs./wafer. Criteria (accept/reject)=(0/1)
G.C.P.: Gain Compression Point
Edition 1.0
May 2000
1
This Material Copyrighted by Its Respective Manufacturer
FMM5805X
17.5-20GHz Power Amplifier MMIC
OUTPUT POWER vs. IMD
P1dB, G1dB vs. FREQUENCY
-15
34
VDD = 6V
IDD = 650mA
-20
P1dB
20GHz IM3
-25
18GHz IM3
30
-30
28
-35
IMD (dBc)
P1dB (dBm), G1dB (dB)
32
VDD = 6V
IDD = 650mA
26
24
-40
22
-50
20
-55
G1dB
20GHz IM5
-45
18GHz IM5
-60
18
-65
12
17 17.5 18 18.5 19 19.5 20 20.5 21
Frequency (GHz)
14
16
18
20
22
24
Total Output Power (dBm)
ASSEMBLY DRAWING
VGG
VDD
0.15µF
0.15µF
220pF
220pF
RFout
RFin
Gap to be minimized at the output
220pF
220pF
0.15µF
0.15µF
VGG
VDD
2
This Material Copyrighted by Its Respective Manufacturer
26
28
30
FMM5805X
17.5-20GHz Power Amplifier MMIC
BONDING LAYOUT
VGG1
VDD1
VDD2
VDD4
RFout
RF in
VDD5
VDD3
VGG2
S-PARAMETERS
VDD = 6V, IDS = 650mA
FREQUENCY
S11
(MHZ)
MAG
ANG
14000
14500
15000
15500
16000
16500
17000
17500
18000
18500
19000
19500
20000
20500
21000
21500
22000
22500
23000
.672
.596
.502
.402
.297
.225
.212
.256
.321
.364
.405
.440
.458
.431
.328
.116
.209
.457
.598
144.5
138.7
133.1
132.5
136.1
147.8
169.1
-172.7
-169.9
-169.8
-172.0
-179.7
173.4
161.5
145.7
138.9
-112.3
-133.3
-154.3
S21
S12
ANG
MAG
ANG
MAG
ANG
3.454
4.871
7.047
7.936
11.029
12.663
12.727
12.061
11.271
10.470
10.272
9.732
9.580
9.979
10.109
9.421
7.116
4.684
2.873
165.4
134.6
106.3
68.9
28.2
-13.5
-58.7
-97.8
-133.1
-167.0
159.4
129.4
92.7
55.9
14.0
-36.9
-92.0
-139.4
176.7
.006
.006
.006
.008
.007
.007
.008
.008
.009
.010
.010
.010
.009
.007
.007
.006
.007
.009
.011
-90.6
-84.4
-90.4
-101.5
-95.3
-96.5
-93.8
-90.3
-92.5
-92.2
-100.8
-109.5
-107.3
-115.9
-110.0
-91.9
-84.0
-73.9
-77.9
.821
.754
.659
.536
.399
.316
.357
.471
.555
.585
.578
.533
.471
.388
.325
.282
.224
.186
.162
114.2
102.2
87.0
67.3
34.4
-19.3
-77.0
-117.9
-144.7
-163.0
-178.4
170.5
162.5
156.4
156.3
158.9
165.0
178.1
-165.7
3
This Material Copyrighted by Its Respective Manufacturer
S22
MAG
FMM5805X
17.5-20GHz Power Amplifier MMIC
CHIP OUTLINE
0
VGG1
VDD1 VGG1
VDD2
VGG1
VDD4
110
680 710
1160
2210
2940
Unit: µm
3360
2630
2520
2460
2395
2250
1315
RFout
1115
RFin
110
235
170
0
0
0 110
710
1160
2210
2940
VGG2
VDD3
VGG2
VDD5
3470
Chip Size: 3.47±30µm x 2.63±30µm
VGG1, VGG2: One bonding is available
Chip Thickness: 70±20µm
Pad Dimensions: 1. DC 80µm x 80µm
2. RF 120µm x 80µm
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not ingest.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0699M200
4
This Material Copyrighted by Its Respective Manufacturer