EUDYNA FMM5051VF

FMM5051VF
13.75-14.5GHz Power Amplifier MMIC
FEATURES
•
•
•
•
•
•
High Output Power: 31.5dBm (typ.)
High Linear Gain: 31.5dB (typ.)
Low Input VSWR
Broad Band: 13.75 ~ 14.5GHz
Impedance Matched Zin/Zout = 50Ω
Small Hermetic Metal-Ceramic Package (VF)
DESCRIPTION
The FMM5051VF is a MMIC amplifier that contains a three-stage
amplifier, internally matched, for standard communications in the
13.75 to 14.5GHz frequency range. This product is well suited for
VSAT applications as it offers high power, high gain, and low VSWR.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
Symbol
Rating
Unit
Drain-Source Voltage
VDD
8
V
Gate-Source Voltage
VGG
-3
V
Input Power
Pin
8
dBm
Storage Temperature
Tstg
-65 to +175
°C
Operating Case Temperature
Top
-40 to +85
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs modules:
1. The drain operating voltage (VDD) should not exceed 5 volts.
2. The gate operating voltage (VGG) should not exceed 0 volts.
ELECTRICAL CHARACTERISTICS (Case Temperature Ta=25°C)
Item
Frequency Range
Symbol
Test Conditions
Min.
f
Limit
Typ. Max.
Unit
GHz
13.75-14.5
Pout
30.8
31.5
-
dBm
Linear Gain
GL
30.0
31.5
-
dB
Gain Flatness
∆G
-
1.5
2
dB
Output Power (Pin=3dBm)
VDD = 5V
VGG = 0V
f =13.75 to 14.5GHz
Input VSWR
VSWRi
-
2:1
3:1
-
Output VSWR
VSWRo
-
2:1
3:1
-
-
800
1000
mA
DC Input Current
IDD
VDD = 5V, VGG = 0V
CASE STYLE: VF
Edition 1.1
May 2001
G.C.P.: Gain Compression Point
1
FMM5051VF
13.75-14.5GHz Power Amplifier MMIC
OUTPUT POWER vs. INPUT POWER
32
28
26
24
22
1000
20
800
18
600
-12
-10
-8
-6
-4
-2
0
2
IDD(mA)
Output Power (dBm)
30
VDD=5V
VGG=0V
f=14.5GHz
4
Input Power (dBm)
Output Power (dBm)
OUTPUT POWER vs. FREQUENCY
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
VDD=5V
VGG=0V
IDD=800mA
P1dBm
-4dBm
-8dBm
-12dBm
12.5
13
13.5
14
Frequency (GHz)
2
14.5
15
15.5
FMM5051VF
13.75-14.5GHz Power Amplifier MMIC
S11
+j50
+j100
+j25
+j10
S22
+j50
+j100
+j25
+j250
17.0
+j250
+j10
16.0
13.0
25
0
50Ω
100
17.0
10
0
16.0
50Ω
14.0
14.0
13.0
15.0
-j10
100
15.0
11.0GHz
-j10
-j250
-j250
12.0
12.0
11.0GHz
-j25
-j25
-j100
-j100
-j50
-j50
S-PARAMETERS
VDD = 5V, VGG = 0V
S21
S12
MAG
ANG
MAG
ANG
FREQUENCY
S11
(MHZ)
MAG
ANG
11000
11500
12000
12500
13000
13500
14000
14500
15000
15500
16000
16500
17000
.740
.739
.627
.518
.178
.239
.400
.406
.450
.467
.600
.711
.785
-81.857
-101.149
-116.071
-139.881
168.355
6.386
-37.02
-70.73
-105.697
-149.353
-170.36
167.121
150.759
13.457
18.257
24.049
32.716
39.042
39.41
36.17
31.57
24.022
17.462
11.478
7.015
4.078
177.785
141.305
104.138
57.683
2.669
-56.752
-109.235
-164.016
140.215
88.766
39.618
-6.136
-44.014
.003
.001
.003
.002
.002
.003
.003
.003
.003
.001
.004
.005
.009
157.794
0.176
-126.024
-102.594
-122.226
-137.041
-154.964
-143.88
-152.991
-176.233
-175.798
-172.492
174.247
S22
MAG
ANG
.709
.701
.584
.386
.182
.206
.122
.093
.247
.273
.182
.069
.210
-37.611
-71.027
-91.825
-114.205
-96.445
-84.57
-112.619
92.18
49.713
22.654
-10.138
-112.219
174.86
Download S-Parameters, click here
RECOMMENDED BIAS CIRCUIT
1000pF
1000pF
50Ω
50Ω
VGG
RFin
VDD
3
4
2
5
1
6
50Ω
VDD
RFout
VDD
50Ω
1000pF
1000pF
Note: The R/C networks are recommended on the bias supply lines, close to the
package, to prevent video oscillations which could damage the module.
3
FMM5051VF
13.75-14.5GHz Power Amplifier MMIC
Case Style "VF"
17.78
(0.70)
13.46
(0.530)
8.38
(0.330)
INDEX
4-C 1.52
(0.060)
6.4
(0.253)
PIN ASSIGNMENT
3
6
4-0.5
(0.020)
5
4
2-0.3
(0.012)
1.0 MIN
(0.039)
2-R 1.22
(0.048)
(4-R 0.5)
(0.020)
0.125
(0.005)
1.02
(0.040)
3.0 MAX
(0.118)
Pin
Symbol
1.
2.
3.
4.
5.
6.
VDD
RF in
VGG
VDD
RF out
VDD
Unit: mm(inches)
0.51
(0.020)
0.3±0.15
7.88
(0.310)
0.5±0.15
(0.020)
6.63
(0.260)
2
2.44
(0.096)
6.63
(0.261)
1
1.0 MIN
(0.039)
0.5±0.3
8.33
(0.328)
0.5±0.3
0.5±0.15
(0.020)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2001 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0501M200
4