FMM5804X 17.5-31.5GHz Power Amplifier MMIC FEATURES • Output Power: (P1dB): 23.0dBm (Typ.) • High Gain: (G1dB): 18dB (Typ.) • High PAE: ηadd = 18% (Typ.) • Wide Frequency Band: 17.5-31.5 GHz • Impedance Matched Zin/Zout = 50Ω • 0.25µm PHEMT Technology DESCRIPTION The FMM5804X is a high-gain, wide band 4-stage MMIC amplifier designed for operation in the 17.5-31.5 GHz frequency range. This amplifier has an input and output designed for use in 50Ω systems.This device is well suited for point-to-point, point-to-multi-point(LMDS) and satellite communication system applications. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Condition Symbol Rating Unit Drain Voltage VDD 10 V Gate Voltage VGG -3.0 V Input Power Pin 16 dBm Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Operating Backside Temperature Top -40 to +95 °C Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDD) should not exceed 6 volts. 2. The forward and reverse gate currents should not exceed 1.0 and -0.08 mA respectively. 3. This product should be hermetically packaged. ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25°C) Item Frequency Range Symbol Conditions f Output Power at 1 dB G.C.P. P1dB Power Gain at 1 dB G.C.P. G1dB Drain Current Iddrf Power-Added Efficiency ηadd Limits Typ. Max. Min. GHz 17.5-31.5 VDD = 6V f = 17.5 ~ 31.5 GHz *: at f = 17.5-30.0 GHz **: at f = 30.0-31.5 GHz IDD = 250mA (Typ.) ZS = ZL = 50Ω Unit 23* 21** 25* 23** - dBm 15 18 - dB - 300 400 mA - 18 - % Input Return Loss RLi - -15 - dB Output Return Loss RLo - -8 - dB Note: RF parameter sample size 10pcs. Criteria (accept/reject)=(0/1) G.C.P.: Gain Compression Point Edition 1.4 July 1999 1 FMM5804X 17.5-31.5GHz Power Amplifier MMIC P1dB & G1dB vs. VDD 29 27 OUTPUT POWER vs. FREQUENCY IDD = 250mA 18GHz P1dB 18GHz G1dB 31.5GHz P1dB 31.5GHz G1dB 26 25 23 Output Power (dBm) 24 21 19 22 17 21 15 20 13 19 11 18 9 17 4 5 6 7 G1dB (dB) P1dB (dBm) VDD = 6V, IDD = 250mA -7dBm 1dBm -5dBm 3dBm -3dBm 7dBm -1dBm P1dB 28 22 20 18 16 14 12 8 VDD (V) 18 20 22 24 26 Frequency (GHz) ASSEMBLY DRAWING VGG 0.15µF 220pF FMM5804X RFin RFout 50Ω line on Alumina 50Ω line on Alumina 220pF 220pF 0.15µF 0.15µF VDD VDD BONDING LAYOUT VGG1 VGG2 VGG3 VGG4 RF in RFout VDD1 VDD2 VDD3 VDD4 2 28 30 32 FMM5804X 17.5-31.5GHz Power Amplifier MMIC IMD vs. OUTPUT POWER V = 6V -15 I DD= 250mA DS -20 ∆f = 10MHz -25 IMD (dBc) -30 -35 IM3(18 GHz) IM3(31 GHz) IM5(18 GHz) IM5(31 GHz) -40 -45 -50 -55 -60 10 15 20 25 Total Output Power (dBm) S-PARAMETERS VDD = 6V, IDS = 250mA FREQUENCY S11 (MHZ) MAG ANG 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 17500 18000 18500 19000 19500 20000 20500 21000 21500 22000 22500 23000 23500 24000 24500 25000 25500 26000 26500 27000 27500 28000 28500 29000 29500 30000 30500 31000 31500 32000 33000 34000 35000 36000 37000 38000 39000 40000 .544 .534 .521 .503 .483 .457 .426 .389 .342 .311 .293 .270 .251 .236 .228 .225 .219 .218 .221 .219 .218 .216 .210 .206 .197 .192 .183 .174 .170 .160 .156 .144 .138 .130 .117 .109 .095 .084 .081 .090 .106 .137 .164 .188 .212 .238 .256 .282 .427 .481 .512 .540 .570 .571 .586 168.4 156.9 145.5 133.6 121.2 108.2 94.4 79.3 64.8 51.4 34.4 14.9 -6.2 -29.0 -52.8 -78.1 -102.0 -114.1 -125.2 -138.1 -150.4 -163.1 -176.0 171.0 158.1 145.5 132.5 119.3 106.4 92.6 78.7 62.4 47.9 33.3 15.0 -2.1 -26.6 -55.4 -93.3 -135.7 -170.8 157.3 133.6 117.2 99.5 87.6 73.1 80.6 56.0 36.0 21.3 9.9 -0.5 -10.0 -13.6 S21 MAG .013 .024 .287 .087 .027 .322 .967 1.700 2.442 2.256 1.637 1.143 1.105 2.536 6.192 9.276 9.251 9.085 9.101 9.162 9.326 9.586 9.729 9.911 9.991 10.021 10.009 9.909 9.829 9.677 9.583 9.322 9.232 9.099 9.128 9.175 9.367 9.679 9.941 10.258 10.465 10.688 10.884 11.095 11.456 12.041 12.909 2.725 .199 .007 .013 .007 .005 .008 .004 S12 S22 ANG MAG ANG MAG 122.1 -13.5 -112.7 74.1 79.7 129.1 39.2 -35.3 -112.0 173.0 119.7 89.2 91.1 79.3 25.5 -51.6 -116.6 -144.1 -169.6 164.9 139.9 114.7 88.9 63.5 37.3 11.7 -13.9 -39.8 -65.4 -91.0 -116.3 -142.3 -167.3 167.5 141.6 116.1 88.6 60.4 30.8 -0.9 -34.0 -68.9 -106.1 -145.8 169.9 119.4 53.4 -120.4 162.5 -171.0 -81.6 -59.0 -116.0 -87.8 -106.4 .001 .001 .001 .001 .001 .001 .001 .001 .002 .002 .003 .003 .002 .003 .003 .003 .004 .004 .003 .004 .003 .004 .003 .003 .003 .004 .005 .005 .005 .005 .004 .004 .004 .004 .005 .004 .005 .005 .004 .005 .004 .005 .004 .006 .007 .006 .006 .007 .008 .005 .007 .006 .010 .007 .005 -17.1 -106.6 -166.3 -78.4 -104.7 -99.4 -95.9 -90.9 -81.2 -91.2 -95.9 -73.4 -94.4 -84.2 -89.6 -76.7 -74.5 -81.2 -109.0 -76.6 -83.7 -77.6 -88.4 -86.6 -90.2 -97.5 -91.6 -82.0 -79.5 -78.1 -67.6 -66.8 -98.1 -79.5 -70.4 -84.6 -83.4 -67.2 -88.2 -92.7 -70.2 -78.3 -56.4 -58.1 -67.4 -78.4 -80.9 -50.1 -71.8 -70.3 -97.4 -68.7 -65.4 -79.2 -73.7 .987 .948 .974 .965 .969 .968 .959 .944 .920 .887 .844 .789 .717 .629 .542 .449 .372 .338 .324 .316 .322 .341 .353 .372 .390 .411 .434 .445 .454 .454 .450 .433 .406 .374 .345 .307 .261 .220 .182 .164 .140 .139 .142 .151 .176 .219 .403 .859 .800 .785 .809 .816 .828 .844 .862 Download S-Parameters, click here 3 ANG -50.9 -92.3 -149.5 -122.3 -143.9 -159.1 -172.0 176.1 164.3 152.5 140.0 126.2 111.0 94.1 73.8 48.7 19.3 3.2 -13.9 -30.4 -45.7 -60.5 -73.3 -84.6 -95.9 -104.8 -114.4 -124.1 -132.7 -141.4 -150.8 -159.8 -167.9 -176.1 177.1 167.1 160.5 154.6 150.6 151.1 144.0 139.6 122.8 98.9 82.1 68.7 69.6 -11.2 -45.8 -63.0 -74.2 -84.3 -91.6 -99.6 -104.8 FMM5804X 17.5-31.5GHz Power Amplifier MMIC CHIP OUTLINE 0 80 1410 VGG1 VGG2 VGG3 VGG4 550 1150 1750 2050 2530 Unit: µm 1335 1140 1140 RFout RFin 0 75 0 80 240 840 VDD1 VDD2 2330 2470 VDD3 VDD4 0 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com Chip Size: 2610±30µm x 1410±30µm Chip Thickness:70±20µm Pad Dimensions: 1. DC 80 x 80µm 2. RF 120 x 80µm 2610 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not ingest. FUJITSU QUANTUM DEVICES EUROPE, LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0599M200 4