FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB (Typ.) @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5704X is a LNA MMIC designed for applications in the 36-40 GHz frequency range. This product is well suited for satellite communications, radio link, and applications where low noise and high dynamic range are required. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Rating Unit VDD 4 V Input Power Pin -3 dBm Storage Temperature Tstg -65 to +175 °C Operating Backside Temperature Top -45 to +125 °C Item Drain-Source Voltage Condition Symbol Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDD) should not exceed 3 volts. 2. This product should be hermetically packaged. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Symbol Noise Figure NF Associated Gain Gas Conditions (2) VDD = 3V f = 40GHz IDD = 20mA (Typ.) ZS = ZL = 50Ω Min. Limits Typ. Max. Unit - 2.0 2.5 dB 15 18 20 dB - 9 - dBm Output Power at 1dB G.C.P. P1dB Input Return Loss RLin - -10 - dB RLout - -10 - dB Output Return Loss Note 1: RF parameter sample size 10pcs. Criteria (accept/reject)=(0/1) Note 2: Electrical Characteristics specified with RF-probe measurement. Edition 1.0 December 2000 1 FMM5704X 36-40GHz LNA MMIC NOISE FIGURE & Gas vs. FREQUENCY P1dB & G1dB vs. FREQUENCY 25 VDD = 3V IDD = 20mA VDD = 3V IDD = 20mA 20 12 4 15 10 25 3 10 8 20 6 15 4 10 Gas P1dB NF 5 1 0 30 30 35 40 32 34 45 Frequency (GHz) OUTPUT POWER vs. INPUT POWER 14 12 VDD = 3V IDD = 20mA 10 8 32 GHz 34 GHz 36 GHz 38 GHz 40 GHz 6 4 2 0 -2 -4 -20 -15 -10 -5 0 5 Input Power (dBm) ASSEMBLY DRAWING 0.15µF 100pF RFin RFout *1: Bonding Wire Length: 250µm *2: Bonding Wires: 2 *1 *2 *1 *2 2 36 Frequency (GHz) 38 40 G1dB (dB) Gas (dB) P1dB (dBm) G1dB 2 Output Power (dBm) Noise Figure (dB) 5 FMM5704X 36-40GHz LNA MMIC S-PARAMETERS VDD = 3V, IDS = 20mA FREQUENCY S11 (MHZ) MAG ANG 16000 16500 17000 17500 18000 18500 19000 19500 20000 20500 21000 21500 22000 22500 23000 23500 24000 24500 25000 25500 26000 26500 27000 27500 28000 28500 29000 29500 30000 30500 31000 31500 32000 32500 33000 33500 34000 34500 35000 35500 36000 36500 37000 37500 38000 38500 39000 39500 40000 .920 .926 .936 .945 .957 .968 .977 .990 1.000 1.012 1.023 1.039 1.052 1.054 1.063 1.065 1.061 1.048 1.042 1.022 1.002 .976 .932 .882 .832 .773 .722 .659 .557 .487 .385 .287 .227 .157 .122 .088 .107 .116 .090 .071 .049 .076 .096 .076 .063 .071 .076 .096 .115 133.9 128.0 122.0 115.7 109.4 102.7 96.1 89.0 82.2 75.0 67.4 59.7 51.7 43.1 34.8 25.8 16.5 7.4 -2.2 -12.0 -21.9 -32.2 -43.0 -53.5 -64.9 -75.0 -85.4 -98.6 -109.6 -121.1 -136.5 -140.5 -142.4 -147.4 -139.5 -134.7 -119.7 -113.0 -122.0 -116.2 -97.4 -90.5 -97.5 -111.1 -85.5 -68.8 -71.8 -69.3 -65.9 S21 MAG .067 .084 .097 .118 .138 .161 .204 .256 .299 .369 .446 .551 .635 .757 .925 1.117 1.340 1.546 1.786 2.093 2.560 3.037 3.736 4.235 4.917 5.691 6.558 7.712 8.807 9.847 10.915 11.425 12.051 12.664 12.612 12.479 11.885 11.451 10.651 9.866 9.103 8.559 8.196 7.751 7.109 6.467 6.302 6.072 5.836 S12 ANG 41.5 35.3 26.4 20.1 8.9 3.4 -6.5 -15.3 -23.2 -34.0 -43.4 -54.3 -64.0 -75.1 -86.0 -98.2 -108.5 -122.4 -133.5 -144.8 -155.7 -168.2 175.5 158.4 143.9 131.5 117.1 100.0 79.4 61.7 42.3 24.0 4.7 -14.5 -33.4 -51.5 -69.8 -86.2 -102.1 -116.0 -128.4 -141.1 -151.7 -164.8 -174.9 175.0 166.3 158.0 149.4 MAG .004 .002 .001 .000 .002 .002 .004 .004 .005 .006 .005 .006 .007 .006 .008 .008 .007 .008 .007 .006 .004 .004 .004 .003 .004 .003 .006 .010 .012 .016 .018 .018 .019 .020 .022 .023 .024 .024 .024 .023 .024 .027 .029 .031 .029 .025 .022 .019 .016 S22 ANG 62.1 24.5 -62.6 -174.7 101.1 82.9 56.0 37.8 19.7 5.3 -12.1 -15.5 -24.4 -28.5 -34.6 -52.7 -66.0 -66.7 -72.4 -87.8 -88.2 -65.8 -71.0 -70.8 -20.4 -15.5 0.7 -16.3 -16.5 -34.9 -47.2 -58.4 -63.5 -71.3 -76.7 -86.7 -96.3 -105.6 -113.1 -115.1 -120.8 -127.8 -137.6 -153.1 -168.7 178.9 171.6 167.2 165.6 MAG ANG .831 .828 .826 .824 .823 .821 .815 .814 .810 .809 .808 .808 .809 .808 .809 .814 .815 .815 .815 .816 .814 .813 .816 .816 .801 .795 .752 .705 .670 .619 .554 .487 .406 .323 .264 .217 .174 .138 .111 .107 .123 .138 .176 .225 .248 .263 .283 .291 .282 -166.6 -169.9 -173.2 -176.5 -179.7 176.8 173.5 170.4 167.2 163.9 160.7 157.5 154.1 150.5 147.4 143.7 139.5 135.7 131.1 126.1 121.7 116.7 111.4 105.3 98.4 89.7 81.0 74.3 64.5 54.6 45.6 34.5 23.6 14.8 3.5 -12.7 -37.2 -71.8 -114.6 -155.2 -174.6 -179.0 177.3 165.9 153.5 144.4 135.7 127.7 119.0 Download S-Parameters, click here 3 FMM5704X 36-40GHz LNA MMIC CHIP OUTLINE 400 660 1060 Unit: µm VDD1 VDD2 VDD3 900 500 RF IN RF OUT 0 0 160 1300 Chip Size: 1.46mm x 1.06mm Chip Thickness: 110µm(Typ.) Pad Dimensions: 1. DC 80 x 80µm 2. RF 80 x 160µm For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not ingest. FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI05009M200 4