EUDYNA FMM5811GJ-1

FMM5811GJ-1
17.7-23.6GHz Power Amplifier MMIC
FEATURES
•
•
•
•
•
•
High Output Power: P1dB = 24.5dBm (Typ.)
High Gain: G1dB = 15dB (Typ.)
High PAE: ηadd = 20% (Typ.)
Wide Frequency Band: 17.7-23.6GHz
Impedance Matched Zin/Zout = 50Ω
0.25µm PHEMT Technology
DESCRIPTION
The FMM5811GJ-1 is a high-gain, wide band 3-stage MMIC
amplifier designed for operation in the 17.7-23.6GHz
frequency range. This amplifier has an input and output
matching designed for use in a 50Ω systems.This device is
well suited for point-to-point radio applications.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDD
10
V
Gate-Source Voltage
VGG
-7
V
Input Power
Pin
16
dBm
Storage Temperature
Tstg
-55 to +125
°C
Operating Backside Temperature
Top
-40 to +85
°C
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 6 volts.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Frequency Range
Symbol
Conditions
Min.
f
Limits
Typ. Max.
17.7 - 23.6
Unit
GHz
Output Power at 1 dB G.C.P.
P1dB
23.0
24.5
-
dBm
Power Gain at 1 dB G.C.P.
G1dB
12
15
20
dB
-
2.0
-
dB
-
20
-
%
-
250
400
mA
Gain Flatness
∆G
VDD = 6V
VGG = -5V
f = 17.7 - 23.6 GHz
ZS = ZL = 50Ω
Power-Added Efficiency
ηadd
Drain Current
Iddrf
Gate Current
Iggrf
-
-7.5
-15.0
mA
Input Return Loss
RLin
-
-7.0
-
dB
RLout
-
-5.0
-
dB
Output Return Loss
G.C.P.: Gain Compression Point
Edition 1.1
July 2001
1
FMM5811GJ-1
17.7-23.6GHz Power Amplifier MMIC
TOTAL OUTPUT POWER vs. FREQUENCY
P1dB & G1dB vs. VDD
VDD = 6V
17.7GHz P1dB
17.7GHz G1dB
21.2GHz P1dB
21.2GHz G1dB
VDD = 6V
VGG = -5V
VGG = -5V
23.6GHz P1dB
23.6GHz G1dB
Pin 0dBm
6dBm
2dBm
P1dB
4dBm
28
28
26
26
22
24
20
22
18
20
16
Pout (dBm)
24
G1dB (dB)
P1dB (dBm)
P1dB
20
18
16
G1dB
18
22
14
14
17
4
5
18
19
20
21
22
23
24
6
Frequency (GHz)
VDD (V)
IMD vs. OUTPUT POWER
RECOMMENDED BIAS CIRCUIT
VDD = 6V
1000pF
3
2
RFin
1
VDD
50Ω
1000pF
4
5
RFout
6
17.7GHz IM5
21.2GHz IM3
21.2GHz IM5
23.6GHz IM3
23.6GHz IM5
-10
50Ω
VGG
-20
VDD
50Ω
-30
1000pF
IMD (dBc)
50Ω
VGG
VGG = -5V
∆f = 10MHz
1000pF
17.7GHz IM3
-40
Note 1: The R/C networks are recommended on the bias supply lines, close to the
package, to prevent video oscillations which could damage the module.
Note 2: Bias point VDD can be connected at the input side or at the output:
The two pins named VDD are internally connected. The same is true for VGG.
-50
-60
8
10
12
14
16
18
Total Output Power (dBm)
2
20
22
FMM5811GJ-1
17.7-23.6GHz Power Amplifier MMIC
S11
+j50
S22
+j50
+j100
+j100
+j25
+j25
+j250
+j10
+j250
+j10
17.6
20.0
19.2
20.8
0
10
18.4
20.8
17.6
22.4
23.2
0
250
10
21.6
24.0GHz
18.4
23.2
20.0
21.6
24.0GHz
250
22.4
19.2
-j10
-j10
-j250
-j25
-j250
-j25
-j100
-j100
-j50
-j50
S-PARAMETERS
VDD = 6V, VGG = -5V
FREQUENCY
S11
(MHZ)
MAG
ANG
17200
17300
17400
17500
17600
17700
17800
17900
18000
18100
18200
18300
18400
18500
18600
18700
18800
18900
19000
19100
19200
19300
19400
19500
19600
19700
19800
19900
20000
20100
20200
20500
21000
21500
22000
22500
23000
23500
24000
.088
.068
.050
.036
.043
.070
.103
.136
.167
.199
.225
.253
.273
.291
.305
.317
.324
.329
.332
.329
.325
.317
.309
.296
.282
.265
.249
.227
.208
.187
.167
.129
.174
.228
.225
.197
.214
.256
.248
61.4
63.2
76.7
105.3
149.0
167.9
174.2
173.9
172.8
170.0
168.0
165.3
162.1
159.8
156.8
154.4
151.9
149.2
146.9
144.0
141.4
138.5
135.4
131.7
128.2
125.3
119.0
113.6
107.2
99.0
90.1
49.5
-16.6
-42.2
-50.6
-41.6
-25.9
-27.2
-49.3
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
5.077
5.315
5.571
5.823
6.101
6.342
6.549
6.724
6.869
6.968
7.01
7.025
7.02
6.987
6.948
6.881
6.819
6.757
6.686
6.652
6.63
6.593
6.585
6.586
6.594
6.57
6.597
6.644
6.665
6.661
6.701
6.716
6.565
6.212
6.081
6.088
5.956
5.559
5.103
15.8
2.7
-10.9
-25.0
-39.6
-54.5
-69.9
-85.4
-101.2
-116.9
-132.6
-148.1
-163.4
-178.6
166.4
151.8
137.0
122.5
108.2
94.0
79.8
65.6
51.6
37.4
23.1
9.0
-5.1
-19.4
-34.2
-48.6
-63.1
-107.7
177.0
103.3
29.9
-46.3
-126.0
152.1
66.9
.007
.007
.007
.006
.006
.006
.006
.006
.005
.005
.005
.005
.005
.005
.005
.004
.004
.004
.004
.004
.004
.004
.004
.004
.004
.004
.004
.004
.004
.004
.004
.004
.003
.002
.001
.001
.001
.002
.003
156.7
145.1
136.2
125.8
117.2
106.5
97.4
88.1
80.9
70.1
62.9
54.9
48.4
40.3
35.5
26.3
20.6
12.1
5.6
-0.1
-9.6
-17.9
-24.2
-31.5
-38.0
-45.7
-55.2
-62.5
-71.7
-81.1
-87.5
-113.2
-161.4
139.3
35.8
-94.5
-174.6
119.1
32.9
.412
.385
.355
.322
.287
.249
.210
.169
.130
.096
.074
.076
.101
.132
.165
.196
.223
.248
.269
.287
.301
.310
.317
.319
.318
.314
.307
.296
.284
.269
.251
.190
.131
.176
.223
.225
.210
.242
.279
107.9
104.3
100.3
96.0
91.2
85.7
78.9
70.3
57.7
38.8
6.7
-32.7
-60.3
-76.7
-87.9
-96.0
-102.8
-108.5
-113.7
-118.3
-122.6
-126.8
-131.0
-135.1
-139.4
-143.7
-148.3
-153.0
-158.1
-163.5
-169.6
166.8
98.1
32.8
-3.3
-40.1
-91.7
-148.4
170.8
Download S-Parameters, click here
3
FMM5811GJ-1
17.7-23.6GHz Power Amplifier MMIC
Case Style "GJ"
Metal-Ceramic Hermetic Package
4-R 1.2±0.15
(0.047)
3.5 Max.
(0.137)
3
4
2
5
1
6
1.3±0.15
(0.051)
7
(0.276)
3.8
(0.149)
7
(0.276)
11±0.15
(0.433)
15
(0.591)
6-0.3
(0.012)
7
INDEX
1Min.
(0.039)
0.9
(0.035)
6±0.15
(0.236)
12±0.15
(0.472)
1.
2.
3.
4.
5.
6.
7.
VDD
RFin
VGG
VGG
RFout
VDD
GND (Flange)
Unit: mm(inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not ingest.
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2001 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0101M200
4