InGaAs-PIN/Preamp Receiver FRM3Z232BS/BS-A FEATURES • 2.7Gb/s PIN Receiver module in an industry standard mini-DIL package is available in gull-wing or through-hole configuration • High Sensitivity: -25dBm (typ.) • Differential Electrical Output • Pre-amplifier Power Supply Voltage: +3.3V • Wide operating temperature range: -40 to +85°C APPLICATIONS This PIN detector preamp is intended to function as an optical receiver in intermediate reach SONET, SDH, and DWDM systems operating up to 2.7Gb/s. The device operates in both the 1,310 and 1,550nm wavelength windows. The detector preamplifier has a differential electrical output. DESCRIPTION This PIN preamplifier uses an InGaAs PIN chip with a GaAs transimpedance preamplifier. The BS package is designed for surface mount PC board assembly, and the BS-A is designed for through-hole mount assembly. The package is connected with a single-mode fiber by Nd: YAG welding techniques. This device is in compliance with ITU-T recommendations and meet the Telcordia requirements. ABSOLUTE MAXIMUM RATINGS (Tc=25°C, unless otherwise specified) Symbol Ratings Unit Storage Temperature Tstg -40 to +85 °C Operating Temperature Top -40 to +85 °C Supply Voltage VDD 0 to 4.5 V PIN-PD Reverse Voltage VR 0 to 20 V PIN-PD Reverse Current IR (Peak) 3.0 mA Parameter Edition 1.2 March 2003 1 InGaAs-PIN/Preamp Receiver FRM3Z232BS/BS-A OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25°C, λ=1,550nm, VR=+3.3V or +5.0V, VDD=+3.3V unless otherwise specified) Parameter PIN-PD Responsivity AC Transimpedance Bandwidth Symbol Test Conditions R13 R15 R16 λ = 1,310nm, M=1 λ = 1,550nm, M=1 λ = 1,610nm, M=1 0.80 0.85 0.70 2600 Ω Unit A/W 1800 2200 BW Pin=-20dBm, -3dB from 1MHz 2.2 2.4 - GHz - 50 75 kHz Pin=-20dBm, from 1 MHz Pin=-20dBm, from 500MHz to 1.75GHz - - 2 dB - 100 - psec 1.75GHz max. 10 - - 2.5GHz max. 5 - - Average within 2.2GHz - 9.5 11.0 Ta=25°C, Rext=14dB - -25 -24 Ta=40°C ~ 85°C, Rext=14dB Ta=25°C, Rext=10dB - -24 -22 - -24 - 2.488Gb/s, NRZ, PRBS=223-1, B.E.R.=10-10 0 - - (Note 2) -3 - - Saturated Output Voltage 450 550 800 mV Peaking dpk Group Delay Deviation GD Output Return Loss S22 Maximum Overload 0.75 0.80 - Max. - Pin=-20dBm, f=100MHz, Single-ended fcl Sensitivity Limits Typ. Zt Lower Cut-off Frequency Equivalent Input Noise Current Density Min. in Pr Pmax (Note 3) dB pA/ Hz dBm dBm Maximum Output Voltage Swing Vclip Optical Return Loss ORL 30 - - dB Power Supply Current IDD - 45 70 mA Power Supply Voltage VDD 3.15 3.30 3.45 V Note 1: All the parameters are measured with 50Ω AC-coupled. Note 2: Defined by a 10% distortion of the wave form. Note 3: Test condition is 2.488Gb/s, NRZ, PRBS=223-1, B.E.R.=10-10 with fc=1866MHz Bessel filter. 2 InGaAs-PIN/Preamp Receiver FRM3Z232BS/BS-A Notes 3 InGaAs-PIN/Preamp Receiver FRM3Z232BS/BS-A “BS” PACKAGE UNIT: mm “BS-A” PACKAGE UNIT: mm (THROUGH-HOLE) (GULL-WING) Detail of Lead ∅0.9±0.1 ∅0.9±0.1 0.3±0.05 (#8) (#1) ∅4.1±0.2 (R 0. ∅4.1±0.2 5.2MAX. 9.77±0.15 See Lead Detail 1000 min. 24.1±2.0 0.4±0.05 VR GROUND OUT + GROUND NC OUT GROUND VDD (P2.54x3) Pin Description 7.62±0.2 (#5) Top View 1. 2. 3. 4. 5. 6. 7. 8. Pin Description 11.37±0.15 7.62±0.2 (2.0) (P2.54x3) 0.4±0.05 11.37±0.15 7.37±0.15 (#4) (#5) Top View (#8) (#1) (0.5) (#4) 1.2±0.07 1. VR 2. GROUND 3. OUT + 4. GROUND 5. NC 6. OUT 7. GROUND 8. VDD (0.5) 7.37±0.15 (2.0) 4.5 MON. 24.1±2.0 1000 min. 0~10° 0.50±0.15 7) (0.5) 5.2MAX. 7.87±0.15 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. • Do not put this product into the mouth. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEVICES LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2002 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0302M200 4