InGaAs-APD/Preamp Receiver FRM5W231BS FEATURES • 2.5Gb/s APD Receiver module in industry standard mini-DIL package • -34 dBm Sensitivity (Typ.) • -4 dBm Overload (Typ.) • Integral Thermistor • Integral GaAs IC Preamp • Differential Electrical Output APPLICATIONS This 40 GHz gain bandwidth product APD detector preamp is intended to function as an optical receiver in long haul SONET, SDH, and DWDM systems operating at 2.5 Gb/s. The device operates in both the 1,310 and 1,550nm wavelength windows. The nominal 10KΩ integral thermistor allows accurate monitoring of the APD temperature and facilitates the design of the APD bias control circuits. The detector preamplifier is DC coupled with a differential electrical output. DESCRIPTION The FRM5W231BS incorporates a 30 micron InGaAs Avalanche Photodiode (APD) detector, a GaAs IC transimpedance preamplifier, and a thermistor in a mini-dil type package. The APD is processed with modern MOVPE techniques resulting in reliable performance over a wide range of operating conditions. The lens coupling system and the single mode fiber are assembled using Nd: YAG welding techniques. ABSOLUTE MAXIMUM RATINGS (Tc=25°C, unless otherwise specified) Symbol Ratings Unit Storage Temperature Tstg -40 to +85 °C Operating Case Temperature Top -40 to +85 °C Supply Voltage VDD 0 to +6.5 V APD Reverse Voltage VR 0 to VB V APD Reverse Current IR(Peak) 2 mA Parameter Edition 1.1 June 2002 1 InGaAs-APD/Preamp Receiver FRM5W231BS OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25°C, λ=1.31/1.55µm, VDD=+5.0V unless otherwise specified) 1,310nm, M=1 Min. 0.75 Limits Typ. 0.85 R15 1,550nm, M=1 0.80 0.85 - VB ID=10µA 40 50 65 V Temperature Coefficient of VB Γ (Note 2) 0.08 0.12 0.15 V/°C AC Transimpedance Zt AC-Coupled, f=100MHz, RL=50Ω - 2.0 - kΩ BW AC-Coupled, RL=50Ω, M=10, -3dBm from 1MHz 1.8 2.0 - GHz - 8.0 9.0 - -34.0 -32.0 -7 -5 -33.0 -6 -4 -31.0 - Parameter APD Responsivity APD Breakdown Voltage Bandwidth Symbol Test Conditions R13 Equivalent Input Noise Current in Sensitivity Pr AC-Coupled, RL=50Ω, Average in BW 2.488Gb/s, NRZ, PRBS=223-1, B.E.R.=10-10, Rext=13dB, VR is set at optimum value. Tc=25°C Tc=-40 to +85°C (Note 3) (Note 4) Max. - Unit A/W pA/ dBm Maximum Overload Po1 Po2 Optical Return Loss ORL 30 - - dB Power Supply Current IDD - - 70 mA Power Supply Voltage VDD 4.75 5.0 5.25 V Thermistor Resistance Rth 9.5 10.0 10.5 kΩ Thermistor B Constant B 3800 3900 4000 K Note: (1) Since VB may vary from device to device, VB data is attached to each device for reference. (2) Γ=∆VB/∆Tc. (3) Po1 is defined by 10% distortion of the output waveform on the ground level in an AC-coupling condition at a multiplication factor (M) is 3. (4) Po2 is defined as the maximum overload where the BER of 10-10 is maintained by changing only the VR condition to obtain M=3. The other conditions are the same as those of minimum sensitivity. 2 Hz dBm InGaAs-APD/Preamp Receiver FRM5W231BS Relative Response (3dB/div) Fig. 1 APD Detector-Preamp response as a function of frequency with multiplication level as a parameter. M=12 M=10 M=3 λ=1,550nm VDD=5.0V AC-coupled RL=50Ω Pin=-30dBm Ta=25°C 1 2 Frequency, f (GHz) 0 Fig. 2 Bit Error Rate at 1,550nm and a 2.488 Gb/s NRZ 223-1 PRBS for various case temperatuires. VDD=5.0V M=optimum AC-Coupled RL=50Ω 2.488Gb/s PRBS=231-1 Duty 50% Mark Density 50% Bit Error Rate 10-4 10-5 Ta=85°C 10-6 Ta=25°C 10-7 10-8 10-9 10-10 10-11 10-12 -40 Ta=-20°C -35 Pin (dBm) 3 -30 3 InGaAs-APD/Preamp Receiver FRM5W231BS Fig. 3 Output Wave Form Tc=25°C, RL=50Ω, Pin=-30dBm, VDD=5.0V, M=12 100psec/div Fig. 4 Output Wave Form Tc=25°C, RL=50Ω Pin=-7dBm, VDD=-5.2V, M=3 100psec/div 4 InGaAs-APD/Preamp Receiver FRM5W231BS “BS” PACKAGE UNIT: mm Detail of Lead ∅0.9±0.1 0.3±0.05 ∅4.1±0.2 (R 0. 1.2±0.07 24.1±2.0 0.50±0.15 0~10° 1000 MIN. 7) (0.5) (P2.54x3) 0.4±0.05 11.37±0.15 7.62±0.2 Pin Description (#1) (#8) (#4) (#5) Top View 1. VR 2. GROUND 3. OUT + 4. GROUND 5. THERMISTOR 6. OUT 7. GROUND 8. VDD (0.5) 7.37±0.15 (2.0) 5.2MAX. 9.77±0.15 See Lead Detail For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put this product into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEVICES LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2001 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0200M200 5