InGaAs-APD/Preamp Receiver FRM5N141GT FEATURES • Board mount type “GT” package: 17 pins • InGaAs-APD with pre-amplifier • Integrated Design Optimizes Performance at Bit Rates up to 10.7Gb/s • Electrical Differential Output • High Sensitivity: -26.5dBm • Operates in both C and L wavelength bands APPLICATIONS This APD with preamplifier is intended to function as an optical receiver at 1,310nm or 1,530-1,610nm in SONET, SDH, DWDM or other optical fiber systems operating up to 10.7Gb/s. The typical transimpedance (Zt) value of 1,200Ω optimizes the total bandwidth for 10Gb/s application. The detector preamplifier is DC coupled and has an electrical differential output. DESCRIPTION The FRM5N141GT incorporates a high bandwidth InGaAs APD photo diode, a GaAs amplifier in a hermetically sealed board mount type package. The APD is processed with modern epitaxial techniques resulting in a reliable performance over a wide range of operating conditions. ABSOLUTE MAXIMUM RATINGS (Tc=25°C, unless otherwise specified) Ratings Parameter Symbol Min. Max. Unit Storage Temperature Tstg -40 +85 °C Operating Temperature Top -5 +75 °C Supply Voltage Vss -6 0 V APD Reverse Voltage VR 0 VB(Note) V APD Reverse Current IR - 4(peak) mA Note: Since VB may vary from device-to-device, VB data is attached to each device for reference. Edition 1.1 July 2004 1 InGaAs-APD/Preamp Receiver FRM5N141GT OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25°C, λ=1,550nm, Vss=-5.2V, unless otherwise specified) λ = 1,310nm, M=1 λ = 1,550nm, M=1 λ = 1,610nm, M=1 Min. 0.75 0.75 - Limits Typ. 0.85 0.90 0.80 Max. - VB ID = 10µA 20.0 25.0 30.0 V Temperature Coefficient of VB Γ Note (1) 0.03 0.05 0.07 V/°C AC Transimpedance Zt f = 750MHz, Single-end 800 1200 - Ω Maximum Output Voltage Swing Vclip Saturated Output Voltage 350 550 750 mV M=9 6.0 7.5 8.5 Bandwidth BW M=3 6.0 7.5 - -3dB from 750MHz, Pin=-20dBm - 40 100 kHz 130MHz to BW, Pin=-20dBm, M=9 - 0.5 - dB 1GHz to 4GHz, Pin=-20dBm, M=9 - 30 - Symbol Test Conditions R APD Breakdown Voltage Parameter APD Responsivity Lower Cut-off Frequency fcl Peaking dpk Group Delay Deviation GD Output Return Loss Minimum Sensitivity S22 Pr Maximum Overload Po Optical Return Loss ORL -3dB from 750MHz, Pin=-20dBm Unit A/W GHz psp-p 1GHz to 6GHz, Pin=-20dBm, M=9 - 50 - 130MHz to 6GHz - 12 - 130MHz to 8GHz - 7 - - -26.5 -25.0 10Gb/s, NRZ, PRBS=231-1, 25°C B.E.R.=10-12, VR=Optimum, 75°C Rext=13dB dBm - -25.5 -24.0 -7 -5 - λ = 1,550nm 27 - - λ = 1,310nm 27 - - 10Gb/s, NRZ, PRBS=231-1, B.E.R.=10-12, M=3, Rext=13dB dB dBm dB Power Supply Current Iss - - 110 130 mA Power Supply Voltage Vss - -5.46 -5.20 -4.94 V Thermistor Resistance Rth - 9.5 10.0 10.5 kΩ Thermistor B Constant B - 3800 3900 4000 K Note 1: Γ=∆VB/dTc Note: All the parameters are measured with 50Ω load through external coupling capacitor. 2 InGaAs-APD/Preamp Receiver FRM5N141GT Notes 3 InGaAs-APD/Preamp Receiver FRM5N141GT “GT” PACKAGE UNIT: mm 2.8 Lead Detail (x4) 11.75 0.9 2-0.6 7.4 8.0 14.0 2-0.2 #17 0.3 #12 #7 Ø0.9 #1 Ø4.1 8.75 #6 2-0.75 #11 10-0.3 28.0 MAX. 2.3 5.0 MAX. L (Note ) # Symbol 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 GND VPD NC(NIC) VPreamp NC(NIC) GND GND OUT GND OUT GND GND OFFSET NC(NIC) NC(NIC) Rth NC(NIC) GND 16 17 PIN DESIGNATIONS 4-2.0 8-P1.0 Case Ground PD Bias NC(NIC) Preamp Bias NC(NIC) Case Ground Case Ground Output (-) Case Ground Output (+) Case Ground Case Ground DC Offset Control NC(NIC) NC(NIC) Thermistor for APD NC(NIC) Case Ground NC (NIC): No Internal Connection Note: The fiber length (L) shall be specified in the detail (individual) specification. For further information please contact: CAUTION Eudyna Devices USA Inc. Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com • Do not put this product into the mouth. Eudyna Devices Europe Ltd. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4