Technische Information / technical information FB15R06KL4B1 IGBT-Module IGBT-Modules Vorläufig preliminary Elektrische Eigenschaften / electrical properties Höchstzulässige Werte / maximum rated values Diode Gleichrichter/ diode rectifier Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage Tvj =25°C VRRM 800 V Durchlaßstrom Grenzeffektivwert pro Chip RMS forward current per chip TC =80°C IFRMSM 58 A Gleichrichter Ausgang Grenzeffektivstrom maximum RMS current at Rectifier output TC =80°C IRMSmax 50 A Stoßstrom Grenzwert tP = 10 ms, T vj = IFSM 448 A surge forward current tP = 10 ms, T vj = 150°C 358 A Grenzlastintegral tP = 10 ms, T vj = 1000 As 642 As 2 I t - value 25°C 25°C 2 It tP = 10 ms, T vj = 150°C 2 2 Transistor Wechselrichter/ transistor inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Tvj =25°C VCES 600 V TC =65°C IC,nom. 15 A TC = 25 °C IC 19 A ICRM 30 A Ptot 60 W VGES +/- 20V V IF 15 A IFRM 30 A It 2 25 As Tvj =25°C VCES 600 V TC =65 °C IC,nom. 15 A TC = 25 °C IC 19 A ICRM 30 A Ptot 60 W VGES +/- 20V V IF 15 A IFRM 30 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, Gesamt-Verlustleistung total power dissipation TC = 25°C T C =65°C Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ diode inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral 2 I t - value VR = 0V, tp = 10ms, Tvj = 125°C 2 Transistor Brems-Chopper/ transistor brake-chopper Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, Gesamt-Verlustleistung total power dissipation TC = 25°C T C =65°C Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Brems-Chopper/ diode brake-chopper Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms prepared by: Thomas Passe date of publication: 2003-03-26 approved by: R. Keggenhoff revision: 2.1 1(12) Technische Information / technical information IGBT-Module IGBT-Modules FB15R06KL4B1 Vorläufig preliminary Modul Isolation/ module isolation Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate VISOL 2,5 kV Elektrische Eigenschaften / electrical properties Charakteristische Werte / characteristic values min. typ. max. VF - 0,8 - V Tvj = 150°C V(TO) - 0,61 - V Ersatzwiderstand slope resistance Tvj = 150°C rT - 11 - mΩ Sperrstrom reverse current Tvj = 150°C, IR - 5 - mA Modul Leitungswiderstand, Anschlüsse-Chip lead resistance, terminals-chip TC = 25°C RAA'+CC' - 11 - mΩ min. typ. max. Diode Gleichrichter/ diode rectifier Durchlaßspannung forward voltage Tvj = 150°C, Schleusenspannung threshold voltage IF = VR = 15 A 800 V Transistor Wechselrichter/ transistor inverter VGE = 15V, Tvj = 25°C, Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, IC = 15 A IC = 15 A Gate-Schwellenspannung gate threshold voltage VCE = VGE, IC = 0,4mA Eingangskapazität input capacitance f = 1MHz, Tvj = 25°C VCE = 25 V, VGE = 0 V Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Tvj = 25°C, VGE = 0V, Tvj =25°C, V CE = VCE = 0V, VGE =20V, Tvj =25°C IC = INenn, V CC = 68 Ohm VGE = ±15V, Tvj = 125°C, R G = 68 Ohm IC = INenn, 300 V V CC = VGE = ±15V, Tvj = 25°C, R G = 68 Ohm VGE = ±15V, Tvj = 125°C, R G = 68 Ohm IC = INenn, 300 V V CC = VGE = ±15V, Tvj = 25°C, R G = 68 Ohm VGE = ±15V, Tvj = 125°C, R G = 68 Ohm IC = INenn, 300 V V CC = VGE = ±15V, Tvj = 25°C, R G = 68 Ohm VGE = ±15V, Tvj = 125°C, R G = 68 Ohm IC = INenn, 300 V V CC = VGE = ±15V, Tvj = 125°C, R G = IC = INenn, 68 Ohm LS = 80 nH V CC = 300 V VGE = ±15V, Tvj = 125°C, R G = 68 Ohm RG = 68 Ohm Tvj≤125°C, VCC = 360 V 2(12) 1,95 2,55 V 2,2 - V VGE(TO) 4,5 5,5 6,5 V Cies - 0,8 - nF ICES - - 5,0 mA IGES - - 400 nA td,on tr td,off tf - 37 - ns - 34 - ns - 37 - ns - 37 - ns - 216 - ns - 223 - ns - 17 - ns - 26 - ns Eon - 0,6 - mJ Eoff - 0,4 - mJ ISC - 60 - A 80 nH tP ≤ 10µs, VGE ≤ 15V, dI/dt = - 300 V VGE = ±15V, Tvj = 25°C, R G = LS = Kurzschlußverhalten SC Data 600V VCE sat 1000 A/µs Technische Information / technical information IGBT-Module IGBT-Modules FB15R06KL4B1 Vorläufig preliminary Elektrische Eigenschaften / electrical properties Charakteristische Werte / characteristic values Modulinduktivität stray inductance module Modul Leitungswiderstand, Anschlüsse-Chip lead resistance, terminals-chip Diode Wechselrichter/ diode inverter Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current Sperrverzögerungsladung recovered charge Abschaltenergie pro Puls reverse recovery energy TC = 25°C VGE = 0V, Tvj = 25°C, IF = 15 A VGE = 0V, Tvj = 125°C, IF = 15 A IF=INenn, - diF/dt = VGE = -10V, Tvj = 25°C, V R = 300 V 300 V - diF/dt = 300 V VGE = -10V, Tvj = 125°C, V R = 300 V - diF/dt = 300 V VGE = -10V, Tvj = 125°C, V R = 300 V Transistor Brems-Chopper/ transistor brake-chopper VGE = 15V, Tvj = 25°C, Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, IC = 15,0 A IC = 15,0 A Gate-Schwellenspannung gate threshold voltage VCE = VGE, IC = 0,4mA Eingangskapazität input capacitance f = 1MHz, Tvj = 25°C VCE = 25 V, VGE = 0 V Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current VGE = 0V, Tvj = 25°C, V CE = 15A IF = 15A TC = 25°C Abweichung von R100 deviation of R100 TC = 100°C, R 100 = 493 Ω Verlustleistung power dissipation TC = 25°C B-Wert B-value R2 = R1 exp [B(1/T2 - 1/T1)] - 40 nH RCC'+EE' - 10 - mΩ min. typ. max. - 1,75 2,15 V - 1,8 - V VF IRM Qr Erec VCE sat - 13 - A - 14 - A - 0,8 - µAs - 1,4 - µAs - 0,14 - mJ - 0,24 - mJ min. typ. max. - 1,95 2,55 V - 2,2 - V VGE(TO) 4,5 5,5 6,5 V Cies - 0,8 - nF - - 5,0 mA - - 400 nA min. typ. max. - 2,15 2,6 V - 2,25 - V min. typ. max. R25 - 5 - kΩ ∆R/R -5 5 % 20 mW IGES IF = NTC-Widerstand/ NTC-thermistor Nennwiderstand rated resistance - 600V VCE = 0V, VGE = 20V, Tvj = 25°C Diode Brems-Chopper/ diode brake-chopper Tvj = 25°C, Durchlaßspannung forward voltage Tvj = 125°C, LσCE 600 A/us VGE = -10V, Tvj = 25°C, V R = Tvj = 25°C, max. 600 A/us VGE = -10V, Tvj = 25°C, V R = IF=INenn, typ. 600 A/us VGE = -10V, Tvj = 125°C, V R = IF=INenn, min. VF P25 3(12) B25/50 3375 K Technische Information / technical information IGBT-Module IGBT-Modules FB15R06KL4B1 Vorläufig preliminary Thermische Eigenschaften / thermal properties Innerer Wärmewiderstand thermal resistance, junction to heatsink min. typ. max. - 1,1 - K/W - 2,4 - K/W Diode Wechselr./ diode inverter - 4,0 - K/W Trans. Bremse/ trans. brake - 2,4 - K/W - 4,3 - K/W - - 1 K/W Trans. Wechselr./ trans. inverter - - 2 K/W Diode Wechselr./ diode inverter - - 2,9 K/W Trans. Bremse/ trans. brake - - 2 K/W Diode Bremse/ diode brake - - 3,1 K/W - 0,2 - K/W - 0,6 - K/W - 1,4 - K/W Gleichr. Diode/ rectif. diode λPaste=1W/m*K Trans. Wechselr./ trans. inverter λgrease=1W/m*K RthJH Diode Bremse/ diode brake Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand thermal resistance, case to heatsink RthJC Gleichr. Diode/ rectif. diode Gleichr. Diode/ rectif. diode λPaste=1W/m*K Trans. Wechselr./ trans. inverter λgrease=1W/m*K RthCH Diode Wechselr./ diode inverter Trans. Bremse/ trans. brake - 0,6 - K/W Diode Bremse/ diode brake - 1,5 - K/W Höchstzulässige Sperrschichttemperatur maximum junction temperature Tvj - - 150 °C Betriebstemperatur operation temperature Top -40 - 125 °C Lagertemperatur storage temperature Tstg -40 - 125 °C Mechanische Eigenschaften / mechanical properties Innere Isolation internal insulation Al2O3 CTI comperative tracking index 225 Anpreßkraft f. mech. Befestigung pro Feder mounting force per clamp F 40...80 N Gewicht weight G 36 g Kriechstrecke creepage distance 13,5 mm Luftstrecke clearance distance 12 mm Kriechstrecke creepage distance 7,5 mm Luftstrecke clearance distance 7,5 mm Kontakt - Kühlkörper terminal to heatsink Terminal - Terminal terminal to terminal 4(12) Technische Information / technical information FB15R06KL4B1 IGBT-Module IGBT-Modules Vorläufig preliminary Ausgangskennlinienfeld Wechselr. (typisch) output characteristic inverter (typical) IC = f (VCE) VGE = 15 V 30 Tj = 25°C Tj = 125°C 25 IC [A] 20 15 10 5 0 0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00 4,00 4,50 5,00 VCE [V] Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE) output characteristic inverter (typical) Tvj = 125°C 30 VGE = 8V 25 VGE = 9V VGE = 10V Vge=12V IC [A] 20 Vge=15V Vge=20V 15 10 5 0 0,00 0,50 1,00 1,50 2,00 2,50 VCE [V] 5(12) 3,00 3,50 Technische Information / technical information FB15R06KL4B1 IGBT-Module IGBT-Modules Vorläufig preliminary Übertragungscharakteristik Wechselr. (typisch) IC = f (VGE) transfer characteristic inverter (typical) VCE = 20 V 30 Tj = 25°C Tj = 25°C 25 IC [A] 20 15 10 5 0 6,00 7,00 8,00 9,00 10,00 11,00 12,00 13,00 VGE [V] Durchlaßkennlinie der Freilaufdiode Wechselr. (typisch) forward characteristic of FWD inverter (typical) IF = f (VF) 30 Tj = 25°C 25 Tj = 125°C IF [A] 20 15 10 5 0 0,00 0,50 1,00 1,50 VF [V] 6(12) 2,00 2,50 3,00 Technische Information / technical information FB15R06KL4B1 IGBT-Module IGBT-Modules Vorläufig preliminary Schaltverluste Wechselr. (typisch) Eon = f (IC), Eoff = f (IC), Erec = f (IC) VCC = 300 V switching losses inverter (typical) Tj = 125°C, RGon = RGoff = 68 Ohm 25 30 V GE = ±15 V, 3 Eon Eoff 2,5 Erec E [mWs] 2 1,5 1 0,5 0 0 5 10 15 20 IC [A] Schaltverluste Wechselr. (typisch) switching losses inverter (typical) Eon = f (RG), Eoff = f (RG), Erec = f (RG) Tj = 125°C, V GE = +-15 V , I c = Inenn , 300 V VCC = 3 Eon Eoff 2,5 Erec E [mWs] 2 1,5 1 0,5 0 60 80 100 120 140 RG [Ω] 7(12) 160 180 200 220 Technische Information / technical information FB15R06KL4B1 IGBT-Module IGBT-Modules Vorläufig preliminary Transienter Wärmewiderstand Wechselr. transient thermal impedance inverter ZthJH = f (t) 10,000 Zth-IGBT ZthJH [K/W] Zth-FWD 1,000 i 1 IGBT: ri [K/W]: 156,8e-3 i [s]: 3e-6 FWD: r i [K/W]: 261,3e-3 i [s]: 0,100 0,001 2 616,5e-3 4 842e-3 10,16e-3 1,31 78,72e-3 1,03 225,6e-3 1,4 78,7e-3 10,2e-3 225,6e-3 3e-6 0,01 3 784,7e-3 0,1 1 10 t [s] Sicherer Arbeitsbereich Wechselr. (RBSOA) IC = f (VCE) reverse bias save operating area inverter (RBSOA)Tvj = 125°C, VGE = ±15V, RG = 68 Ohm 35 30 IC,Modul 25 IC,Chip IC [A] 20 15 10 5 0 0 100 200 300 VCE [V] 8(12) 400 500 600 700 Technische Information / technical information FB15R06KL4B1 IGBT-Module IGBT-Modules Vorläufig preliminary Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch) output characteristic brake-chopper-IGBT (typical) IC = f (VCE) VGE = 15 V 30 Tj = 25°C Tj = 125°C 25 IC [A] 20 15 10 5 0 0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 VCE [V] Durchlaßkennlinie der Brems-Chopper-Diode (typisch) IF = f (VF) forward characteristic of brake-chopper-FWD (typical) 30 Tj = 25°C Tj = 125°C 25 IF [A] 20 15 10 5 0 0 0,5 1 1,5 VF [V] 9(12) 2 2,5 3 Technische Information / technical information FB15R06KL4B1 IGBT-Module IGBT-Modules Vorläufig preliminary Durchlaßkennlinie der Gleichrichterdiode (typisch) forward characteristic of rectifier diode (typical) IF = f (VF) 30 Tj = 25°C Tj = 150°C 25 IF [A] 20 15 10 5 0 0,00 0,20 0,40 0,60 0,80 1,00 1,20 VF [V] NTC- Temperaturkennlinie (typisch) R = f (T) NTC- temperature characteristic (typical) 100000 Rtyp R[Ω] 10000 1000 100 0 20 40 60 80 TC [°C] 10(12) 100 120 140 Technische Information / technical information IGBT-Module IGBT-Modules FB15R06KL4B1 Vorläufig preliminary Schaltplan/ circuit diagram Gehäuseabmessungen/ package outlines Bohrplan / drilling layout 11(12) Technische Information / technical information IGBT-Module IGBT-Modules FB15R06KL4B1 Gehäuseabmessungen Forts. / package outlines contd. 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