EUPEC FB15R06KL4B1

Technische Information / technical information
FB15R06KL4B1
IGBT-Module
IGBT-Modules
Vorläufig
preliminary
Elektrische Eigenschaften / electrical properties
Höchstzulässige Werte / maximum rated values
Diode Gleichrichter/ diode rectifier
Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage
Tvj =25°C
VRRM
800
V
Durchlaßstrom Grenzeffektivwert pro Chip
RMS forward current per chip
TC =80°C
IFRMSM
58
A
Gleichrichter Ausgang Grenzeffektivstrom
maximum RMS current at Rectifier output
TC =80°C
IRMSmax
50
A
Stoßstrom Grenzwert
tP = 10 ms, T vj =
IFSM
448
A
surge forward current
tP = 10 ms, T vj = 150°C
358
A
Grenzlastintegral
tP = 10 ms, T vj =
1000
As
642
As
2
I t - value
25°C
25°C
2
It
tP = 10 ms, T vj = 150°C
2
2
Transistor Wechselrichter/ transistor inverter
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Tvj =25°C
VCES
600
V
TC =65°C
IC,nom.
15
A
TC = 25 °C
IC
19
A
ICRM
30
A
Ptot
60
W
VGES
+/- 20V
V
IF
15
A
IFRM
30
A
It
2
25
As
Tvj =25°C
VCES
600
V
TC =65 °C
IC,nom.
15
A
TC = 25 °C
IC
19
A
ICRM
30
A
Ptot
60
W
VGES
+/- 20V
V
IF
15
A
IFRM
30
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
tP = 1 ms,
Gesamt-Verlustleistung
total power dissipation
TC = 25°C
T C =65°C
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Diode Wechselrichter/ diode inverter
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
Grenzlastintegral
2
I t - value
VR = 0V, tp = 10ms, Tvj = 125°C
2
Transistor Brems-Chopper/ transistor brake-chopper
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
tP = 1 ms,
Gesamt-Verlustleistung
total power dissipation
TC = 25°C
T C =65°C
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Diode Brems-Chopper/ diode brake-chopper
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
prepared by: Thomas Passe
date of publication: 2003-03-26
approved by: R. Keggenhoff
revision: 2.1
1(12)
Technische Information / technical information
IGBT-Module
IGBT-Modules
FB15R06KL4B1
Vorläufig
preliminary
Modul Isolation/ module isolation
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
VISOL
2,5
kV
Elektrische Eigenschaften / electrical properties
Charakteristische Werte / characteristic values
min.
typ.
max.
VF
-
0,8
-
V
Tvj = 150°C
V(TO)
-
0,61
-
V
Ersatzwiderstand
slope resistance
Tvj = 150°C
rT
-
11
-
mΩ
Sperrstrom
reverse current
Tvj = 150°C,
IR
-
5
-
mA
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
TC = 25°C
RAA'+CC'
-
11
-
mΩ
min.
typ.
max.
Diode Gleichrichter/ diode rectifier
Durchlaßspannung
forward voltage
Tvj = 150°C,
Schleusenspannung
threshold voltage
IF =
VR =
15 A
800 V
Transistor Wechselrichter/ transistor inverter
VGE = 15V, Tvj = 25°C,
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
VGE = 15V, Tvj = 125°C,
IC =
15 A
IC =
15 A
Gate-Schwellenspannung
gate threshold voltage
VCE = VGE,
IC =
0,4mA
Eingangskapazität
input capacitance
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Tvj = 25°C,
VGE = 0V,
Tvj =25°C, V CE =
VCE = 0V, VGE =20V, Tvj =25°C
IC = INenn,
V CC =
68 Ohm
VGE = ±15V, Tvj = 125°C, R G =
68 Ohm
IC = INenn,
300 V
V CC =
VGE = ±15V, Tvj = 25°C, R G =
68 Ohm
VGE = ±15V, Tvj = 125°C, R G =
68 Ohm
IC = INenn,
300 V
V CC =
VGE = ±15V, Tvj = 25°C, R G =
68 Ohm
VGE = ±15V, Tvj = 125°C, R G =
68 Ohm
IC = INenn,
300 V
V CC =
VGE = ±15V, Tvj = 25°C, R G =
68 Ohm
VGE = ±15V, Tvj = 125°C, R G =
68 Ohm
IC = INenn,
300 V
V CC =
VGE = ±15V, Tvj = 125°C, R G =
IC = INenn,
68 Ohm
LS =
80 nH
V CC =
300 V
VGE = ±15V, Tvj = 125°C, R G =
68 Ohm
RG =
68 Ohm
Tvj≤125°C,
VCC =
360 V
2(12)
1,95
2,55
V
2,2
-
V
VGE(TO)
4,5
5,5
6,5
V
Cies
-
0,8
-
nF
ICES
-
-
5,0
mA
IGES
-
-
400
nA
td,on
tr
td,off
tf
-
37
-
ns
-
34
-
ns
-
37
-
ns
-
37
-
ns
-
216
-
ns
-
223
-
ns
-
17
-
ns
-
26
-
ns
Eon
-
0,6
-
mJ
Eoff
-
0,4
-
mJ
ISC
-
60
-
A
80 nH
tP ≤ 10µs, VGE ≤ 15V,
dI/dt =
-
300 V
VGE = ±15V, Tvj = 25°C, R G =
LS =
Kurzschlußverhalten
SC Data
600V
VCE sat
1000 A/µs
Technische Information / technical information
IGBT-Module
IGBT-Modules
FB15R06KL4B1
Vorläufig
preliminary
Elektrische Eigenschaften / electrical properties
Charakteristische Werte / characteristic values
Modulinduktivität
stray inductance module
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
Diode Wechselrichter/ diode inverter
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
TC = 25°C
VGE = 0V, Tvj = 25°C,
IF =
15 A
VGE = 0V, Tvj = 125°C,
IF =
15 A
IF=INenn,
- diF/dt =
VGE = -10V, Tvj = 25°C, V R =
300 V
300 V
- diF/dt =
300 V
VGE = -10V, Tvj = 125°C, V R =
300 V
- diF/dt =
300 V
VGE = -10V, Tvj = 125°C, V R =
300 V
Transistor Brems-Chopper/ transistor brake-chopper
VGE = 15V, Tvj = 25°C,
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
VGE = 15V, Tvj = 125°C,
IC =
15,0 A
IC =
15,0 A
Gate-Schwellenspannung
gate threshold voltage
VCE = VGE,
IC =
0,4mA
Eingangskapazität
input capacitance
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
VGE = 0V, Tvj = 25°C, V CE =
15A
IF =
15A
TC = 25°C
Abweichung von R100
deviation of R100
TC = 100°C, R 100 = 493 Ω
Verlustleistung
power dissipation
TC = 25°C
B-Wert
B-value
R2 = R1 exp [B(1/T2 - 1/T1)]
-
40
nH
RCC'+EE'
-
10
-
mΩ
min.
typ.
max.
-
1,75
2,15
V
-
1,8
-
V
VF
IRM
Qr
Erec
VCE sat
-
13
-
A
-
14
-
A
-
0,8
-
µAs
-
1,4
-
µAs
-
0,14
-
mJ
-
0,24
-
mJ
min.
typ.
max.
-
1,95
2,55
V
-
2,2
-
V
VGE(TO)
4,5
5,5
6,5
V
Cies
-
0,8
-
nF
-
-
5,0
mA
-
-
400
nA
min.
typ.
max.
-
2,15
2,6
V
-
2,25
-
V
min.
typ.
max.
R25
-
5
-
kΩ
∆R/R
-5
5
%
20
mW
IGES
IF =
NTC-Widerstand/ NTC-thermistor
Nennwiderstand
rated resistance
-
600V
VCE = 0V, VGE = 20V, Tvj = 25°C
Diode Brems-Chopper/ diode brake-chopper
Tvj = 25°C,
Durchlaßspannung
forward voltage
Tvj = 125°C,
LσCE
600 A/us
VGE = -10V, Tvj = 25°C, V R =
Tvj = 25°C,
max.
600 A/us
VGE = -10V, Tvj = 25°C, V R =
IF=INenn,
typ.
600 A/us
VGE = -10V, Tvj = 125°C, V R =
IF=INenn,
min.
VF
P25
3(12)
B25/50
3375
K
Technische Information / technical information
IGBT-Module
IGBT-Modules
FB15R06KL4B1
Vorläufig
preliminary
Thermische Eigenschaften / thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to heatsink
min.
typ.
max.
-
1,1
-
K/W
-
2,4
-
K/W
Diode Wechselr./ diode inverter
-
4,0
-
K/W
Trans. Bremse/ trans. brake
-
2,4
-
K/W
-
4,3
-
K/W
-
-
1
K/W
Trans. Wechselr./ trans. inverter
-
-
2
K/W
Diode Wechselr./ diode inverter
-
-
2,9
K/W
Trans. Bremse/ trans. brake
-
-
2
K/W
Diode Bremse/ diode brake
-
-
3,1
K/W
-
0,2
-
K/W
-
0,6
-
K/W
-
1,4
-
K/W
Gleichr. Diode/ rectif. diode
λPaste=1W/m*K
Trans. Wechselr./ trans. inverter
λgrease=1W/m*K
RthJH
Diode Bremse/ diode brake
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
RthJC
Gleichr. Diode/ rectif. diode
Gleichr. Diode/ rectif. diode
λPaste=1W/m*K
Trans. Wechselr./ trans. inverter
λgrease=1W/m*K
RthCH
Diode Wechselr./ diode inverter
Trans. Bremse/ trans. brake
-
0,6
-
K/W
Diode Bremse/ diode brake
-
1,5
-
K/W
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Tvj
-
-
150
°C
Betriebstemperatur
operation temperature
Top
-40
-
125
°C
Lagertemperatur
storage temperature
Tstg
-40
-
125
°C
Mechanische Eigenschaften / mechanical properties
Innere Isolation
internal insulation
Al2O3
CTI
comperative tracking index
225
Anpreßkraft f. mech. Befestigung pro Feder
mounting force per clamp
F
40...80
N
Gewicht
weight
G
36
g
Kriechstrecke
creepage distance
13,5
mm
Luftstrecke
clearance distance
12
mm
Kriechstrecke
creepage distance
7,5
mm
Luftstrecke
clearance distance
7,5
mm
Kontakt - Kühlkörper
terminal to heatsink
Terminal - Terminal
terminal to terminal
4(12)
Technische Information / technical information
FB15R06KL4B1
IGBT-Module
IGBT-Modules
Vorläufig
preliminary
Ausgangskennlinienfeld Wechselr. (typisch)
output characteristic inverter (typical)
IC = f (VCE)
VGE = 15 V
30
Tj = 25°C
Tj = 125°C
25
IC [A]
20
15
10
5
0
0,00
0,50
1,00
1,50
2,00
2,50
3,00
3,50
4,00
4,50
5,00
4,00
4,50
5,00
VCE [V]
Ausgangskennlinienfeld Wechselr. (typisch)
IC = f (VCE)
output characteristic inverter (typical)
Tvj = 125°C
30
VGE = 8V
25
VGE = 9V
VGE = 10V
Vge=12V
IC [A]
20
Vge=15V
Vge=20V
15
10
5
0
0,00
0,50
1,00
1,50
2,00
2,50
VCE [V]
5(12)
3,00
3,50
Technische Information / technical information
FB15R06KL4B1
IGBT-Module
IGBT-Modules
Vorläufig
preliminary
Übertragungscharakteristik Wechselr. (typisch)
IC = f (VGE)
transfer characteristic inverter (typical)
VCE = 20 V
30
Tj = 25°C
Tj = 25°C
25
IC [A]
20
15
10
5
0
6,00
7,00
8,00
9,00
10,00
11,00
12,00
13,00
VGE [V]
Durchlaßkennlinie der Freilaufdiode Wechselr. (typisch)
forward characteristic of FWD inverter (typical)
IF = f (VF)
30
Tj = 25°C
25
Tj = 125°C
IF [A]
20
15
10
5
0
0,00
0,50
1,00
1,50
VF [V]
6(12)
2,00
2,50
3,00
Technische Information / technical information
FB15R06KL4B1
IGBT-Module
IGBT-Modules
Vorläufig
preliminary
Schaltverluste Wechselr. (typisch)
Eon = f (IC), Eoff = f (IC), Erec = f (IC) VCC =
300 V
switching losses inverter (typical)
Tj = 125°C,
RGon = RGoff =
68 Ohm
25
30
V GE = ±15 V,
3
Eon
Eoff
2,5
Erec
E [mWs]
2
1,5
1
0,5
0
0
5
10
15
20
IC [A]
Schaltverluste Wechselr. (typisch)
switching losses inverter (typical)
Eon = f (RG), Eoff = f (RG), Erec = f (RG)
Tj = 125°C, V GE = +-15 V ,
I c = Inenn ,
300 V
VCC =
3
Eon
Eoff
2,5
Erec
E [mWs]
2
1,5
1
0,5
0
60
80
100
120
140
RG [Ω]
7(12)
160
180
200
220
Technische Information / technical information
FB15R06KL4B1
IGBT-Module
IGBT-Modules
Vorläufig
preliminary
Transienter Wärmewiderstand Wechselr.
transient thermal impedance inverter
ZthJH = f (t)
10,000
Zth-IGBT
ZthJH [K/W]
Zth-FWD
1,000
i
1
IGBT: ri [K/W]: 156,8e-3
i [s]:
3e-6
FWD: r i [K/W]: 261,3e-3
i [s]:
0,100
0,001
2
616,5e-3
4
842e-3
10,16e-3
1,31
78,72e-3
1,03
225,6e-3
1,4
78,7e-3
10,2e-3
225,6e-3
3e-6
0,01
3
784,7e-3
0,1
1
10
t [s]
Sicherer Arbeitsbereich Wechselr. (RBSOA)
IC = f (VCE)
reverse bias save operating area inverter (RBSOA)Tvj = 125°C, VGE = ±15V, RG =
68 Ohm
35
30
IC,Modul
25
IC,Chip
IC [A]
20
15
10
5
0
0
100
200
300
VCE [V]
8(12)
400
500
600
700
Technische Information / technical information
FB15R06KL4B1
IGBT-Module
IGBT-Modules
Vorläufig
preliminary
Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch)
output characteristic brake-chopper-IGBT (typical)
IC = f (VCE)
VGE = 15 V
30
Tj = 25°C
Tj = 125°C
25
IC [A]
20
15
10
5
0
0,00
0,50
1,00
1,50
2,00
2,50
3,00
3,50
4,00
VCE [V]
Durchlaßkennlinie der Brems-Chopper-Diode (typisch) IF = f (VF)
forward characteristic of brake-chopper-FWD (typical)
30
Tj = 25°C
Tj = 125°C
25
IF [A]
20
15
10
5
0
0
0,5
1
1,5
VF [V]
9(12)
2
2,5
3
Technische Information / technical information
FB15R06KL4B1
IGBT-Module
IGBT-Modules
Vorläufig
preliminary
Durchlaßkennlinie der Gleichrichterdiode (typisch)
forward characteristic of rectifier diode (typical)
IF = f (VF)
30
Tj = 25°C
Tj = 150°C
25
IF [A]
20
15
10
5
0
0,00
0,20
0,40
0,60
0,80
1,00
1,20
VF [V]
NTC- Temperaturkennlinie (typisch)
R = f (T)
NTC- temperature characteristic (typical)
100000
Rtyp
R[Ω]
10000
1000
100
0
20
40
60
80
TC [°C]
10(12)
100
120
140
Technische Information / technical information
IGBT-Module
IGBT-Modules
FB15R06KL4B1
Vorläufig
preliminary
Schaltplan/ circuit diagram
Gehäuseabmessungen/ package outlines
Bohrplan /
drilling layout
11(12)
Technische Information / technical information
IGBT-Module
IGBT-Modules
FB15R06KL4B1
Gehäuseabmessungen Forts. / package outlines contd.
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes
12(12)
Terms & Conditions of Usage
Attention
The present product data is exclusively subscribed to technically experienced
staff. This Data Sheet is describing the specification of the products for which a
warranty is granted exclusively pursuant the terms and conditions of the supply
agreement. There will be no guarantee of any kind for the product and its
specifications. Changes to the Data Sheet are reserved.
You and your technical departments will have to evaluate the suitability of the
product for the intended application and the completeness of the product data
with respect to such application. Should you require product information in
excess of the data given in the Data Sheet, please contact your local Sales Office
via “www.eupec.com / sales & contact”.
Warning
Due to technical requirements the products may contain dangerous substances.
For information on the types in question please contact your local Sales Office via
“www.eupec.com / sales & contact”.