Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current VCES 1200 V T C = 80 °C IC,nom. 25 A T C = 25 °C IC 50 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, T C = 80°C ICRM 50 A Gesamt-Verlustleistung total power dissipation T C=25°C, Transistor Ptot 200 W VGES +/- 20V V IF 25 A IFRM 50 A I2t 230 A2s VISOL 2,5 kV Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, T Vj = 125°C Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. Charakteristische Werte / Characteristic values min. Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage IC = 25A, VGE = 15V, Tvj = 25°C VCE sat typ. max. - 2,1 2,6 V - 2,4 2,9 V VGE(th) 4,5 5,5 6,5 V IC = 25A, VGE = 15V, Tvj = 125°C Gate-Schwellenspannung gate threshold voltage IC = 1mA, VCE = VGE, T vj = 25°C Gateladung gate charge VGE = -15V...+15V QG - 0,26 - µC Eingangskapazität input capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cies - 1,65 - nF Rückwirkungskapazität reverse transfer capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cres - 0,11 - nF VCE = 1200V, VGE = 0V, Tvj = 25°C ICES Kollektor-Emitter Reststrom collector-emitter cut-off current VCE = 1200V, VGE = 0V, Tvj = 125°C Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C prepared by: Mark Münzer date of publication: 09.09.1999 approved by: M. Hierholzer revision: 2 1(8) IGES - 2 78 µA - 200 - µA - - 400 nA Seriendatenblatt_BSM25GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Charakteristische Werte / Characteristic values min. typ. max. - 0,06 - µs - 0,07 - µs - 0,05 - µs - 0,05 - µs - 0,27 - µs - 0,32 - µs - 0,03 - µs - 0,06 - µs Eon - 3,3 - mWs Eoff - 2,9 - mWs ISC - 220 - A LsCE - 60 - nH RCC‘+EE‘ - 8,0 - mΩ min. typ. max. Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) IC = 25A, VCC = 600V VGE = ±15V, RG = 33Ω, T vj = 25°C td,on VGE = ±15V, RG = 33Ω, T vj = 125°C Anstiegszeit (induktive Last) rise time (inductive load) IC = 25A, VCC = 600V VGE = ±15V, RG = 33Ω, T vj = 25°C tr VGE = ±15V, RG = 33Ω, T vj = 125°C Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) IC = 25A, VCC = 600V VGE = ±15V, RG = 33Ω, T vj = 25°C td,off VGE = ±15V, RG = 33Ω, T vj = 125°C Fallzeit (induktive Last) fall time (inductive load) IC = 25A, VCC = 600V VGE = ±15V, RG = 33Ω, T vj = 25°C tf VGE = ±15V, RG = 33Ω, T vj = 125°C Einschaltverlustenergie pro Puls turn-on energy loss per pulse IC = 25A, VCC = 600V, VGE = 15V Abschaltverlustenergie pro Puls turn-off energy loss per pulse IC = 25A, VCC = 600V, VGE = 15V Kurzschlußverhalten SC Data RG = 33Ω, T vj = 125°C, LS = 130nH RG = 33Ω, T vj = 125°C, LS = 130nH tP ≤ 10µsec, VGE ≤ 15V, RG = 33Ω T Vj≤125°C, VCC=900V, VCEmax=VCES -LsCE ·dI/dt Modulinduktivität stray inductance module Modul Leitungswiderstand, Anschlüsse – Chip module lead resistance, terminals – chip T C=25°C Charakteristische Werte / Characteristic values Diode / Diode Durchlaßspannung forward voltage IF = 25A, VGE = 0V, Tvj = 25°C Rückstromspitze peak reverse recovery current IF = 25A, - diF/dt = 650A/µsec VF IF = 25A, VGE = 0V, Tvj = 125°C VR = 600V, VGE = -15V, Tvj = 25°C IRM VR = 600V, VGE = -15V, Tvj = 125°C Sperrverzögerungsladung recovered charge 1,8 2,3 V 1,7 2,2 V - 25 - A - 32 - A IF = 25A, - diF/dt = 650A/µsec VR = 600V, VGE = -15V, Tvj = 25°C Qr VR = 600V, VGE = -15V, Tvj = 125°C Abschaltenergie pro Puls reverse recovery energy - - 2,5 - µAs - 5,4 - µAs - 1 - mWs - 2,2 - mWs IF = 25A, - diF/dt = 650A/µsec VR = 600V, VGE = -15V, Tvj = 25°C VR = 600V, VGE = -15V, Tvj = 125°C 2(8) Erec Seriendatenblatt_BSM25GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Thermische Eigenschaften / Thermal properties min. typ. max. - - 0,6 K/W - - 1 K/W RthCK - 0,02 - K/W Höchstzulässige Sperrschichttemperatur maximum junction temperature T vj - - 150 °C Betriebstemperatur operation temperature T op -40 - 125 °C Lagertemperatur storage temperature T stg -40 - 150 °C 6 Nm Innerer Wärmewiderstand thermal resistance, junction to case Transistor / transistor, DC Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per module λ Paste = 1 W/m * K / λ grease = 1 W/m * K RthJC Diode/Diode, DC Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation AL2O3 CTI comperative tracking index 225 M1 Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque terminals M6 Gewicht weight 3 M2 Nm G 180 Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) Seriendatenblatt_BSM25GD120DLC-E3224.xls g Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Ausgangskennlinie (typisch) Output characteristic (typical) IC = f (VCE) VGE = 15V 50 45 Tj = 25°C 40 Tj = 125°C IC [A] 35 30 25 20 15 10 5 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) IC = f (VCE) Tvj = 125°C 50 VGE = 17V 45 VGE = 15V VGE = 13V 40 VGE = 11V VGE = 9V IC [A] 35 VGE = 7V 30 25 20 15 10 5 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4(8) Seriendatenblatt_BSM25GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Übertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE) VCE = 20V 50 45 Tj = 25°C 40 Tj = 125°C IC [A] 35 30 25 20 15 10 5 0 5 6 7 8 9 10 11 12 VGE [V] Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) IF = f (VF) 50 45 Tj = 25°C 40 Tj = 125°C IF [A] 35 30 25 20 15 10 5 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VF [V] 5(8) Seriendatenblatt_BSM25GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) VGE=15V, Rgon = Rgoff =33 Ω , VCE = 600V, Tj = 125°C 9 Eoff 8 Eon Erec 7 E [mJ] 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 50 270 300 IC [A] Schaltverluste (typisch) Switching losses (typical) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE=15V , IC = 25A , VCE = 600V , Tj = 125°C 16 Eoff 14 Eon Erec 12 E [mJ] 10 8 6 4 2 0 0 30 60 90 120 150 180 210 240 RG [Ω Ω] 6(8) Seriendatenblatt_BSM25GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Transienter Wärmewiderstand Transient thermal impedance ZthJC = f (t) 10 ZthJC [K / W] 1 Zth:Diode Zth:IGBT 0,1 0,01 0,001 0,01 0,1 1 10 100 t [sec] i ri [K/kW] : IGBT τi [sec] : IGBT ri [K/kW] : Diode τi [sec] : Diode 1 2 3 4 117,12 394,24 31,28 57,36 0,009 0,045 0,073 0,229 59,25 436,14 387,87 116,74 0,003 0,022 0,064 0,344 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) VGE = 15V, Rg = 33 Ohm, Tvj= 125°C 60 50 IC [A] 40 IC,Modul IC,Chip 30 20 10 0 0 200 400 600 800 1000 1200 1400 VCE [V] 7(8) Seriendatenblatt_BSM25GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 8(8) Seriendatenblatt_BSM25GD120DLC-E3224.xls Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. Should you require product information in excess of the data given in the Data Sheet, please contact your local Sales Office via “www.eupec.com / sales & contact”. Warning Due to technical requirements the products may contain dangerous substances. For information on the types in question please contact your local Sales Office via “www.eupec.com / sales & contact”.