Technische Information / technical information IGBT-Module IGBT-Modules FZ1600R12KE3 vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Tvj= 25°C VCES 1200 V Kollektor Dauergleichstrom DC collector current Tc= 80°C Tc= 25°C IC, nom IC 1600 2300 A A Periodischer Kollektor Spitzenstrom repetitive peak collector current tp= 1ms, Tc= 80°C ICRM 3200 A Gesamt Verlustleistung total power dissipation Tc= 25°C;Transistor Ptot 7,8 kW VGES +/- 20 V IF 1600 A IFRM 3200 A I²t 300 k A²s VISOL 2,5 kV Gate Emitter Spitzenspannung gate emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forward current tp= 1ms Grenzlastintegral I²t value VR= 0V, tp= 10ms, Tvj= 125°C Isolations Prüfspannung insulation test voltage RMS, f= 50Hz, t= 1min. Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter Kollektor Emitter Sättigungsspannung collector emitter satration voltage IC= 1600A, VGE= 15V, Tvj= 25°C, IC= 1600A, VGE= 15V, Tvj= 125°C, min. typ. max. - 1,7 2,15 V - 2 t.b.d. V VGE(th) 5 5,8 6,5 V VCEsat Gate Schwellenspannung gate threshold voltage IC= 64mA, VCE= VGE, Tvj= 25°C, Gateladung gate charge VGE= -15V...+15V;VCE= ...V QG - 15,4 - µC Eingangskapazität input capacitance f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V Cies - 115 - nF Rückwirkungskapazität reverse transfer capacitance f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V Cres - 5,4 - nF Kollektor Emitter Reststrom collector emitter cut off current VCE=1200V, VGE= 0V, Tvj= 25°C, ICES - - 5 mA Gate Emitter Reststrom gate emitter leakage current VCE= 0V, VGE= 20V, Tvj= 25°C IGES - - 400 nA prepared by: MOD-D2; Mark Münzer date of publication: 2002-07-29 approved: SM TM; Christoph Lübke revision: 2.0 1 (8) DB_FZ1600R12KE3_2.0.xls 2002-07-29 Technische Information / technical information IGBT-Module IGBT-Modules FZ1600R12KE3 vorläufige Daten preliminary data Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter min. typ. max. - 0,60 - µs - 0,66 - µs - 0,23 - µs - 0,22 - µs - 0,82 - µs - 0,96 - µs - 0,15 - µs - 0,18 - µs Eon - 325 - mJ Eoff - 250 - mJ ISC - 6400 - A LsCE - 12 - nH RCC´/EE´ - 0,19 - mW - 2,2 2,8 V - 2 - V - 515 - A - 800 - A - 75 - µC - 180 - µC - 18 - mJ - 47 - mJ IC= 1600A, VCC= 600V Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) VGE=±15V, RGon=1,6W, T vj=25°C td,on VGE=±15V, RGon=1,6W, T vj=125°C IC= 1600A, VCC= 600V Anstiegszeit (induktive Last) rise time (inductive load) VGE=±15V, RGon=1,6W, T vj=25°C tr VGE=±15V, RGon=1,6W, T vj=125°C IC= 1600A, VCC= 600V Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) VGE=±15V, RGoff =0,2W, T vj=25°C td,off VGE=±15V,RGoff =0,2W, T vj=125°C IC= 1600A, VCC= 600V Fallzeit (induktive Last) fall time (inductive load) VGE=±15V, RGoff =0,2W, T vj=25°C tf VGE=±15V, RGoff =0,2W, T vj=125°C Einschaltverlustenergie pro Puls turn on energy loss per pulse Ausschaltverlustenergie pro Puls turn off energy loss per pulse Kurzschlussverhalten SC data IC= 1600A, VCC= 600V, Ls= 45nH VGE=±15V, RGon=1,6W, T vj=125°C IC= 1600A, VCC= 600V, Ls= 45nH VGE=±15V, RGoff =0,2W, T vj=125°C tP £ 10µs, VGE £ 15V, TVj £ 125°C VCC= 900V, VCEmax= VCES - LsCE · çdi/dtç Modulindiktivität stray inductance module Leitungswiderstand, Anschluss-Chip lead resistance, terminal-chip Tc= 25°C Charakteristische Werte / characteristic values Diode Wechselrichter / diode inverter Durchlassspannung forward voltage Rückstromspitze peak reverse recovery current IF= IC, nom, VGE= 0V, Tvj= 25°C IF= IC, nom, VGE= 0V, Tvj= 125°C VF IF=IC,nom, -diF/dt= 7200A/µs VR= 600V, VGE= -15V, Tvj= 25°C IRM VR= 600V, VGE= -15V, Tvj= 125°C Sperrverzögerungsladung recoverred charge IF=IC,nom, -diF/dt= 7200A/µs VR= 600V, VGE= -15V, Tvj= 25°C Qr VR= 600V, VGE= -15V, Tvj= 125°C Ausschaltenergie pro Puls reverse recovery energy IF=IC,nom, -diF/dt= 7200A/µs VR= 600V, VGE= -15V, Tvj= 25°C VR= 600V, VGE= -15V, Tvj= 125°C 2 (8) Erec DB_FZ1600R12KE3_2.0.xls 2002-07-29 Technische Information / technical information IGBT-Module IGBT-Modules FZ1600R12KE3 vorläufige Daten preliminary data Thermische Eigenschaften / thermal properties min. typ. Innerer Wärmewiderstand pro Transistor /per transistor, DC RthJC - - 0,016 max. K/W thermal resistance, junction to case pro Diode/per Diode, DC RthJC - - 0,032 K/W Übergangs Wärmewiderstand thermal resistance, case to heatsink pro Modul / per module lPaste/lgrease =1W/m*K RthCK - 0,006 - K/W Höchstzulässige Sperrschichttemp. maximum junction temperature Tvj max - - 150 °C Betriebstemperatur operation temperature Tvj op -40 - 125 °C Lagertemperatur storage temperature Tstg -40 - 125 °C Mechanische Eigenschaften / mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation Al2O3 Kriechstrecke creepage distance 32 mm Luftstrecke clearance 20 mm CTI comperative tracking index >400 Anzugsdrehmoment, mech. Befestigung mounting torque Schraube / screw M5 M 4,25 - 5,75 Nm Anzugsdrehmoment, elektr. Anschlüsse terminal connection torque Anschlüsse / terminal M4 M 1,7 - 2,3 Nm Anschlüsse / terminal M8 M 8 - 10 Nm Gewicht weight G 1500 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid with the belonging technical notes. 3 (8) DB_FZ1600R12KE3_2.0.xls 2002-07-29 Technische Information / technical information IGBT-Module IGBT-Modules FZ1600R12KE3 vorläufige Daten preliminary data Ausgangskennlinie (typisch) output characteristic (typical) IC= f(VCE) VGE= 15V 3200 2800 Tvj = 25°C Tvj = 125°C 2400 IC [A] 2000 1600 1200 800 400 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 VCE [V] Ausgangskennlinienfeld (typisch) output characteristic (typical) IC= f(VCE) Tvj= 125°C IC [A] 3200 2800 Vge=19V 2400 Vge=15V 2000 Vge=11V Vge=17V Vge=13V Vge=9V 1600 1200 800 400 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4 (8) DB_FZ1600R12KE3_2.0.xls 2002-07-29 Technische Information / technical information IGBT-Module IGBT-Modules FZ1600R12KE3 vorläufige Daten preliminary data IC= f(VGE) VCE= 20V Übertragungscharakteristik (typisch) transfer characteristic (typical) 3200 2800 Tvj=25°C 2400 Tvj=125°C IC [A] 2000 1600 1200 800 400 0 5 6 7 8 9 10 11 12 13 VGE [V] Durchlasskennlinie der Inversdiode (typisch) forward caracteristic of inverse diode (typical) IF= f(VF) 3200 2800 2400 Tvj = 25°C Tvj = 125°C IF [A] 2000 1600 1200 800 400 0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 2,8 3,0 VF [V] 5 (8) DB_FZ1600R12KE3_2.0.xls 2002-07-29 Technische Information / technical information IGBT-Module IGBT-Modules FZ1600R12KE3 vorläufige Daten preliminary data Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Schaltverluste (typisch) Switching losses (typical) VGE=±15V, Rgon=1,6W, Rgoff=0,2W, VCE=600V, Tvj=125°C 1000 900 Eon 800 Eoff Erec E [mJ] 700 600 500 400 300 200 100 0 0 400 800 1200 1600 2000 2400 2800 3200 IC [A] Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) Schaltverluste (typisch) Switching losses (typical) VGE=±15V, IC=1600A, VCE=600V, Tvj=125°C 1000 900 Eon 800 Eoff Erec 700 E [mJ] 600 500 400 300 200 100 0 0 2 4 6 RG [W] 6 (8) 8 10 12 DB_FZ1600R12KE3_2.0.xls 2002-07-29 Technische Information / technical information IGBT-Module IGBT-Modules FZ1600R12KE3 vorläufige Daten preliminary data Transienter Wärmewiderstand Transient thermal impedance ZthJC = f (t) ZthJC [K/W] 0,1 0,01 Zth : IGBT Zth : Diode 0,001 0,001 0,01 0,1 1 10 t [s] i ri [K/kW] : IGBT ti [s] : IGBT ri [K/kW] : Diode ti [s] : Diode 2 6,27 5,634E-02 10,08 7,451E-02 1 1,91 6,897E-01 9,18 4,452E-01 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) 3 6,17 2,997E-02 10,58 2,647E-02 4 1,65 3,820E-03 2,16 2,850E-03 VGE=15V, T j=125°C 4000 IC,Chip 3600 3200 IC [A] 2800 2400 2000 1600 IC,Chip 1200 800 400 0 0 200 400 600 800 1000 1200 1400 VCE [V] 7 (8) DB_FZ1600R12KE3_2.0.xls 2002-07-29 Technische Information / technical information IGBT-Module IGBT-Modules FZ1600R12KE3 vorläufige Daten preliminary data Gehäusemaße / Schaltbild Package outline / Circuit diagram 61.5 ± 0.3 18 ± 0.2 29.5 130 114 ± 0.5 C (K) C (K) E (A) E (A) ± 0.5 ± 0.1 DD... C C C 28.25 ± 0.5 18.25 M8 ± 0.5 G E C C E E FD... 14.75 ± 0.5 14 ± 0.5 E8 ± 0.3 M 4.0 tief 10.65 2.5 tief 48.8 C E E C G C 2 + 0.2 28 ± 0.5 E C E ± 0.2 G 10.35 E ± 0.2 ø7 +0.1 external connection (to be done) (für M6-Schraube) FZ... ± 0.2 IH4 8 (8) DB_FZ1600R12KE3_2.0.xls 2002-07-29 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. 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