Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current VCES 1700 V TC = 80 °C IC,nom. 800 A TC = 25 °C IC 1300 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80°C ICRM 1600 A Gesamt-Verlustleistung total power dissipation TC=25°C, Transistor Ptot 6,6 kW VGES +/- 20V V IF 800 A IFRM 1600 A I2t 170 kA2s VISOL 4 kV Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, TVj = 125°C Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. Charakteristische Werte / Characteristic values min. typ. max. - 2,6 3,1 V - 3,1 3,6 V VGE(th) 4,5 5,5 6,5 V Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage IC = 800A, VGE = 15V, Tvj = 25°C VCE sat IC = 800A, VGE = 15V, Tvj = 125°C Gate-Schwellenspannung gate threshold voltage IC = 60mA, VCE = VGE, Tvj = 25°C Gateladung gate charge VGE = -15V ... +15V QG - 9,6 - µC Eingangskapazität input capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cies - 52 - nF Rückwirkungskapazität reverse transfer capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cres - 2,7 - nF VCE = 1700V, VGE = 0V, Tvj = 25°C ICES - 0,02 1,5 mA - 10 80 mA - - 400 nA Kollektor-Emitter Reststrom collector-emitter cut-off current VCE = 1700V, VGE = 0V, Tvj = 125°C Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C prepared by: Alfons Wiesenthal date of publication: 04.08.2000 approved by: Chr. Lübke; 11.08.2000 revision: 2 (Series) 1(8) IGES FZ800R17KF6CB2 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 Charakteristische Werte / Characteristic values min. typ. max. - 0,3 - µs - 0,3 - µs - 0,14 - µs - 0,14 - µs - 1,1 - µs - 1,1 - µs - 0,11 - µs - 0,12 - µs Eon - 300 - mWs Eoff - 325 - mWs ISC - 3200 - A LsCE - 12 - nH RCC´+EE´ - 0,08 - mΩ min. typ. max. Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) IC = 800A, VCE = 900V VGE = ±15V, RG = 1,8Ω, Tvj = 25°C td,on VGE = ±15V, RG = 1,8Ω, Tvj = 125°C Anstiegszeit (induktive Last) rise time (inductive load) IC = 800A, VCE = 900V VGE = ±15V, RG = 1,8Ω, Tvj = 25°C tr VGE = ±15V, RG = 1,8Ω, Tvj = 125°C Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) IC = 800A, VCE = 900V VGE = ±15V, RG = 1,8Ω, Tvj = 25°C td,off VGE = ±15V, RG = 1,8Ω, Tvj = 125°C Fallzeit (induktive Last) fall time (inductive load) IC = 800A, VCE = 900V VGE = ±15V, RG = 1,8Ω, Tvj = 25°C tf VGE = ±15V, RG = 1,8Ω, Tvj = 125°C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlußverhalten SC Data IC = 800A, VCE = 900V, VGE = 15V RG = 1,8Ω, Tvj = 125°C, LS = 50nH IC = 800A, VCE = 900V, VGE = 15V RG = 1,8Ω, Tvj = 125°C, LS = 50nH tP ≤ 10µsec, VGE ≤ 15V TVj≤125°C, VCC=1000V, VCEmax=VCES -LsCE ·dI/dt Modulinduktivität stray inductance module Modulleitungswiderstand, Anschlüsse - Chip module lead resistance, terminals - chip pro Zweig / per arm Charakteristische Werte / Characteristic values Diode / Diode Durchlaßspannung forward voltage IF = 800A, VGE = 0V, Tvj = 25°C VF IF = 800A, VGE = 0V, Tvj = 125°C Rückstromspitze peak reverse recovery current IF = 800A, - diF/dt = 6600A/µsec Sperrverzögerungsladung recovered charge IF = 800A, - diF/dt =6600A/µsec Abschaltenergie pro Puls reverse recovery energy IF = 800A, - diF/dt = 6600A/µsec VR = 900V, VGE = -10V, Tvj = 25°C IRM VR = 900V, VGE = -10V, Tvj = 125°C VR = 900V, VGE = -10V, Tvj = 25°C Qr VR = 900V, VGE = -10V, Tvj = 125°C VR = 900V, VGE = -10V, Tvj = 25°C VR = 900V, VGE = -10V, Tvj = 125°C 2(8) Erec - 2,1 2,5 V - 2,1 2,5 V - 800 - A - 920 - A - 170 - µAs - 300 - µAs - 80 - mWs - 160 - mWs FZ800R17KF6CB2 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 Thermische Eigenschaften / Thermal properties min. typ. max. - - 0,019 K/W - - 0,034 K/W RthCK - 0,008 - K/W Höchstzulässige Sperrschichttemperatur maximum junction temperature Tvj - - 150 °C Betriebstemperatur operation temperature Top -40 - 125 °C Lagertemperatur storage temperature Tstg -40 - 125 °C Transistor / transistor, DC Innerer Wärmewiderstand thermal resistance, junction to case Diode/Diode, DC Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per module λPaste = 1 W/m*K / λgrease = 1 W/m*K RthJC Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation AlN Kriechstrecke creepage distance 17 mm Luftstrecke clearance 10 mm CTI comperative tracking index 275 M1 Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque terminals M4 M2 terminals M8 Gewicht weight G 5 Nm 2 Nm 8 - 10 Nm 1050 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) FZ800R17KF6CB2 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 Ausgangskennlinie (typisch) Output characteristic (typical) I C = f (VCE) VGE = 15V 1800 1600 1400 IC [A] 1200 1000 800 Tvj = 25°C 600 Tvj = 125°C 400 200 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 4,5 5,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) I C = f (VCE) Tvj = 125°C 1800 1600 vGE = 20V vGE = 15V 1400 vGE = 12V vGE = 10V 1200 vGE = 9V IC [A] vGE = 8V 1000 800 600 400 200 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 VCE [V] 4(8) FZ800R17KF6CB2 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 Übertragungscharakteristik (typisch) Transfer characteristic (typical) I C = f (VGE) VCE = 20V 1800 1600 Tj = 25°C 1400 Tj = 125°C IC [A] 1200 1000 800 600 400 200 0 5 6 7 8 9 10 11 12 13 VGE [V] Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) I F = f (VF) 1800 1600 Tvj=25°C 1400 Tvj=125°C IF [A] 1200 1000 800 600 400 200 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VF [V] 5(8) FZ800R17KF6CB2 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 Schaltverluste (typisch) Eon = f (IC) , E off = f (IC) , E rec = f (IC) Rgon = Rgoff =1,8 Ω, VCE = 900V, Tj = 125°C, VGE = ± 15V Switching losses (typical) 1200 Eoff 1000 EON Erec E [mJ] 800 600 400 200 0 0 200 400 600 800 1000 1200 1400 1600 1800 IC [A] Schaltverluste (typisch) Switching losses (typical) E on = f (RG) , E off = f (RG) , E rec = f (RG) IC = 800A , VCE = 900V , Tj = 125°C, VGE = ± 15V 1000 900 Eoff EON 800 Erec E [mJ] 700 600 500 400 300 200 100 0 0 2 4 6 8 10 RG [Ω] 6(8) FZ800R17KF6CB2 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 Transienter Wärmewiderstand Transient thermal impedance ZthJC = f (t) 0,01 Zth:Diode Zth:IGBT 0,001 0,001 0,01 0,1 1 10 100 t [sec] i ri [K/kW] : IGBT τi [sec] : IGBT ri [K/kW] : Diode τi [sec] : Diode 1 2 3 4 1,82 8,99 3,8 4,39 0,003 0,05 0,1 0,95 3,35 18,22 6,22 6,21 0,003 0,045 0,45 0,75 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) Rg = 1,8 Ohm, Tvj= 125°C 1800 1600 1400 1200 IC [A] ZthJC [K / W] 0,1 IC,Modul 1000 IC,Chip 800 600 400 200 0 0 200 400 600 800 1000 1200 1400 1600 1800 VCE [V] 7 (8) FZ800R17KF6CB2 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 Äußere Abmessungen / external dimensions 8(8) FZ800R17KF6CB2 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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