Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 600 R 65 KF1 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Tvj=125°C Tvj=25°C Tvj=-40°C VCES TC = 80 °C IC,nom. 600 A TC = 25 °C IC 1200 A 6500 6300 5800 V Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, T C = 80°C ICRM 1200 A Gesamt-Verlustleistung total power dissipation TC=25°C, Transistor Ptot 11,4 kW VGES +/- 20V V IF 600 A IFRM 1200 A I2t 165 k A2s Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, T Vj = 125°C Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. VISOL 10,2 kV Teilentladungs Aussetzspannung partial discharge extinction voltage RMS, f = 50 Hz, QPD typ. 10pC (acc. To IEC 1287) VISOL 5,1 kV Charakteristische Werte / Characteristic values min. typ. max. - 4,3 4,9 V - 5,3 5,9 V VGE(th) 6,4 7,0 8,1 V Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage IC = 600A, VGE = 15V, Tvj = 25°C VCE sat IC = 600A, VGE = 15V, Tvj = 125°C Gate-Schwellenspannung gate threshold voltage IC = 100mA, VCE = VGE, Tvj = 25°C Gateladung gate charge VGE = -15V ... +15V QG - 8,4 - µC Eingangskapazität input capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cies - 84 - nF Kollektor-Emitter Reststrom collector-emitter cut-off current VCE = 6300V, VGE = 0V, Tvj = 25°C VCE = 6500V, VGE = 0V, Tvj = 125°C ICES - 0,6 60 - mA mA Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C IGES - - 400 nA prepared by: Dr. Oliver Schilling date of publication: 2002-07-05 approved by: Dr. Schütze 2002-07-05 revision/Status: Series 1 1 FZ 600 R65 KF1 (final1).xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 600 R 65 KF1 Charakteristische Werte / Characteristic values min. typ. max. - 0,75 - µs - 0,72 - µs - 0,37 - µs - 0,40 - µs - 5,50 - µs - 6,00 - µs - 0,40 - µs - 0,50 - µs Eon - 5900 - mJ Eoff - 3500 - mJ ISC - 3000 - A LσCE - 18 - nH RCC´+EE´ - 0,12 - mΩ min. typ. max. 3,0 3,8 4,6 V 3,9 4,7 V Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) IC = 600A, VCE = 3600V VGE = ±15V, RGon = 4,3Ω, CGE=68nF, Tvj = 25°C, td,on VGE = ±15V, RGon = 4,3Ω, CGE=68nF, Tvj = 125°C, Anstiegszeit (induktive Last) rise time (inductive load) IC = 600A, VCE = 3600V VGE = ±15V, RGon = 4,3Ω, CGE=68nF, Tvj = 25°C, tr VGE = ±15V, RGon = 4,3Ω, CGE=68nF, Tvj = 125°C, Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) IC = 600A, VCE = 3600V VGE = ±15V, RGoff = 25Ω, CGE=68nF, Tvj = 25°C, td,off VGE = ±15V, RGoff = 25Ω, CGE=68nF, Tvj = 125°C, Fallzeit (induktive Last) fall time (inductive load) IC = 600A, VCE = 3600V VGE = ±15V, RGoff = 25Ω, CGE=68nF, Tvj = 25°C, tf VGE = ±15V, RGoff = 25Ω, CGE=68nF, Tvj = 125°C, Einschaltverlustenergie pro Puls turn-on energy loss per pulse IC = 600A, VCE = 3600V, VGE = ±15V Abschaltverlustenergie pro Puls turn-off energy loss per pulse IC = 600A, VCE = 3600V, VGE = ±15V Kurzschlußverhalten SC Data tP ≤ 10µsec, VGE ≤ 15V, acc to appl.note 2002/05 RGon = 4,3Ω, CGE=68nF, Tvj = 125°C , Lσ = 280nH RGoff = 25Ω, CGE=68nF, Tvj = 125°C , Lσ = 280nH TVj≤125°C, VCC=4400V, VCEmax=VCES -LσCE ·di/dt Modulinduktivität stray inductance module Modulleitungswiderstand, Anschlüsse - Chip module lead resistance, terminals - chip Diode / Diode Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current IF = 600A, VGE = 0V, Tvj = 25°C VF IF = 600A, VGE = 0V, Tvj = 125°C IF = 600A, - diF/dt = 2000A/µs VR = 3600V, VGE = -10V, Tvj = 25°C IRM VR = 3600V, VGE = -10V, Tvj = 125°C Sperrverzögerungsladung recovered charge 800 - A - 1000 - A IF = 600A, - diF/dt = 2000A/µs VR = 3600V, VGE = -10V, Tvj = 25°C Qr VR = 3600V, VGE = -10V, Tvj = 125°C Abschaltenergie pro Puls reverse recovery energy - - 550 - µC - 1050 - µC IF = 600A, - diF/dt = 2000A/µs VR = 3600V, VGE = -10V, Tvj = 25°C VR = 3600V, VGE = -10V, Tvj = 125°C 2 Erec - 660 - mJ - 1600 - mJ FZ 600 R65 KF1 (final1).xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 600 R 65 KF1 Thermische Eigenschaften / Thermal properties Transistor / transistor, DC Innerer Wärmewiderstand thermal resistance, junction to case Diode/Diode, DC Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per Module λPaste ≤ 1 W/m*K / λgrease ≤ 1 W/m*K Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur Sperrschicht junction operation temperature Schaltvorgänge IGBT(RBSOA);Diode(SOA) switching operation IGBT(RBSOA);Diode(SOA) Lagertemperatur storage temperature min. typ. - - 0,011 K/W - - 0,021 K/W RthCK - 0,006 - K/W Tvj, max - - 150 °C Tvj,op -40 - 125 °C Tstg -40 - 125 °C RthJC max. Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation AlN Kriechstrecke creepage distance 56 mm Luftstrecke clearance 26 mm CTI comperative tracking index >600 Anzugsdrehmoment f. mech. Befestigung mounting torque Schraube /screw M6 Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque Anschlüsse / terminals M4 Anschlüsse / terminals M8 Gewicht weight M M G 5 Nm 2 Nm 8 - 10 Nm 1400 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3 FZ 600 R65 KF1 (final1).xls Technische Information / Technical Information FZ 600 R 65 KF1 IGBT-Module IGBT-Modules Ausgangskennlinie (typisch) Output characteristic (typical) IC = f (VCE) V GE = 15V 1300 1200 25°C 1100 125°C 1000 900 IC [A] 800 700 600 500 400 300 200 100 0 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0 10,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) IC = f (VCE), VGE= < see inset > Tvj = 125°C 1300 1200 1100 20V 1000 12V 900 10V 15V IC [A] 800 700 600 500 400 300 200 100 0 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0 10,0 VCE [V] 4 FZ 600 R65 KF1 (final1).xls Technische Information / Technical Information FZ 600 R 65 KF1 IGBT-Module IGBT-Modules Übertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE) VCE = 10V 1300 1200 1100 25°C 1000 125°C 900 IC [A] 800 700 600 500 400 300 200 100 0 5 6 7 8 9 10 11 12 13 14 15 VGE [V] Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) IF = f (VF) 1300 1200 25°C 1100 125°C 1000 900 IF [A] 800 700 600 500 400 300 200 100 0 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 VF [V] 5 FZ 600 R65 KF1 (final1).xls Technische Information / Technical Information FZ 600 R 65 KF1 IGBT-Module IGBT-Modules Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) RGon=4,3Ω, RGoff=25Ω, CGE = 68nF, VGE=±15V, VCE = 3600V, Tvj = 125°C, 16000 14000 Eon Eoff E [mJ] 12000 Erec 10000 8000 6000 4000 2000 0 0 200 400 600 800 1000 1200 IC [A] Schaltverluste (typisch) Switching losses (typical) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) IC = 600A , VCE = 3600V , VGE=±15V, CGE=68nF , Tvj = 125°C 14000 12000 Eon Eoff Erec E [mJ] 10000 8000 6000 4000 2000 0 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 RG [Ω] 6 FZ 600 R65 KF1 (final1).xls Technische Information / Technical Information FZ 600 R 65 KF1 IGBT-Module IGBT-Modules Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) RG,off = 25Ω, CGE=68nF, VGE=±15V, Tvj= <see inset>, VCC <=4400V 1200 1000 Tvj=125°C IC [A] 800 Tvj=25°C 600 400 200 0 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 VCE [V] (at auxiliary terminals) Sicherer Arbeitsbereich Diode (SOA) safe operation area Diode (SOA) Pmax = 1800kW ; Tvj= 125°C 1200 1000 IR [A] 800 600 400 200 0 0 1000 2000 3000 4000 5000 6000 VR [V] (at auxiliary terminals) 7 FZ 600 R65 KF1 (final1).xls Technische Information / Technical Information FZ 600 R 65 KF1 IGBT-Module IGBT-Modules Transienter Wärmewiderstand Transient thermal impedance ZthJC = f (t) ZthJC [K / W] 0,1 0,01 0,001 Zth:Diode Zth:IGBT 0,0001 0,001 0,01 0,1 1 10 100 t [s] i 1 2 3 4 ri [K/kW] : IGBT 4,95 2,75 0,66 2,64 τi [s] : IGBT 0,030 0,10 0,30 1,0 ri [K/kW] : Diode 9,45 5,25 1,26 5,04 τi [s] : Diode 0,030 0,10 0,30 1,0 8 FZ 600 R65 KF1 (final1).xls Technische Information / Technical Information FZ 600 R 65 KF1 IGBT-Module IGBT-Modules Äußere Abmessungen / extenal dimensions Anschlüsse / Terminals 1 Hilfsemitter / auxiliary emitter 2 Gate / gate 3 Hilfskollektor / auxiliary collector 4,6,8, Emitter / emitter 5,7,9 Kollektor / collector 9 FZ 600 R65 KF1 (final1).xls Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. Should you require product information in excess of the data given in the Data Sheet, please contact your local Sales Office via “www.eupec.com / sales & contact”. Warning Due to technical requirements the products may contain dangerous substances. For information on the types in question please contact your local Sales Office via “www.eupec.com / sales & contact”.