New Product SiZ702DT Vishay Siliconix N-Channel 30-V (D-S) MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 and Channel-2 30 RDS(on) (Ω) ID (A) 0.012 at VGS = 10 V 16a 0.0145 at VGS = 4.5 V 16a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 6.8 nC APPLICATIONS PowerPAIR™ 6 x 3.7 3.73 mm G1 Pin 1 1 2 D1 VIN 3 S2 5 S2 6.00 mm 6 VIN N-Channel 1 MOSFET 3 GLS/G2 GND N-Channel 2 MOSFET 4 4 VSW/S1/D2 VSW GLS GND 5 GHS/G1 VIN 2 D1 S1/D2 G2 6 GHS 1 D1 VIN/D1 • Notebook System Power • POL • Low Current dc-to-dc GND/S2 Ordering Information: SiZ702DT-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID Channel-1 Channel-2 30 ± 20 Source Drain Current Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C 13.8b, c 11b, c 14b, c 11.2b, c 50 16a 3.2 PD A 16a 3.7b, c b, c 18 16 mJ 27 17.4 30 19 3.9b, c 2.5b, c 4.5b, c 2.9b, c TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e V 16a 16a IDM Pulsed Drain Current Unit W - 55 to 150 260 °C THERMAL RESISTANCE RATINGS Channel-1 Parameter b, f t ≤ 10 s Symbol RthJA RthJC Channel-2 Typ. Max. Typ. Max. 24 3.5 32 4.6 21 3.2 28 4.2 Unit Maximum Junction-to-Ambient °C/W Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 67 °C/W for Channel-1 and for Channel-2. Document Number: 65525 S09-2266-Rev. A, 02-Nov-09 www.vishay.com 1 New Product SiZ702DT Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS VGS = 0 V, ID = 250 µA Ch-1 Ch-2 ΔVDS/TJ ID = 250 µA Ch-1 Ch-2 33 ΔVGS(th)/TJ ID = 250 µA Ch-1 Ch-2 -5 VGS(th) VDS = VGS, ID = 250 µA Ch-1 Ch-2 IGSS VDS = 0 V, VGS = ± 20 V mV/°C V Ch-1 Ch-2 ± 100 nA VDS = 30 V, VGS = 0 V Ch-1 Ch-2 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-1 Ch-2 5 VDS ≥ 5 V, VGS = 10 V Ch-1 Ch-2 VGS = 10 V, ID = 13.8 A Ch-1 Ch-2 0.010 0.012 VGS = 4.5 V, ID = 12.6 A Ch-1 Ch-2 0.012 0.0145 VDS = 10 V, ID = 13.8 A Ch-1 Ch-2 47 Ch-1 Ch-2 790 Ch-1 Ch-2 190 Ch-1 Ch-2 76 Ch-1 Ch-2 14 21 Ch-1 Ch-2 6.8 11 Ch-1 Ch-2 2.6 Ch-1 Ch-2 1.9 RDS(on) gfs V 2.5 IDSS ID(on) 30 1 µA 20 A Ω S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 13.8 A Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = 15 V, VGS = 4.5 V, ID = 13.8 A f = 1 MHz Ch-1 Ch-2 pF nC 0.4 2 4 Ω Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 65525 S09-2266-Rev. A, 02-Nov-09 New Product SiZ702DT Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Ch-1 Ch-2 15 25 Ch-1 Ch-2 12 20 Ch-1 Ch-2 20 30 tf Ch-1 Ch-2 10 15 td(on) Ch-1 Ch-2 10 15 Ch-1 Ch-2 12 20 Ch-1 Ch-2 20 30 Ch-1 Ch-2 10 15 Unit Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tr td(off) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD TC = 25 °C IS = 10 A, VGS = 0 V Ch-1 Ch-2 16 Ch-1 Ch-2 50 A Ch-1 Ch-2 0.8 1.2 V Body Diode Reverse Recovery Time trr Ch-1 Ch-2 20 40 ns Body Diode Reverse Recovery Charge Qrr Ch-1 Ch-2 10 20 nC IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Fall Time ta Ch-1 Ch-2 11 Reverse Recovery Rise Time tb Ch-1 Ch-2 9 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 65525 S09-2266-Rev. A, 02-Nov-09 www.vishay.com 3 New Product SiZ702DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 20 VGS = 10 V thru 4 V 16 I D - Drain Current (A) I D - Drain Current (A) 50 40 VGS = 3 V 30 20 12 TC = 25 °C 8 4 10 TC = 125 °C VGS = 2 V 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.014 1200 1000 0.012 VGS = 4.5 V 0.010 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.0 VGS = 10 V 800 600 400 Coss 0.008 200 Crss 0.006 0 0 10 20 30 40 50 60 0 5 ID - Drain Current (A) 10 20 25 30 VDS - Drain-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 10 1.7 1.6 ID = 13.8 A 8 ID = 13.8 A 1.5 VDS = 15 V 6 VDS = 7.5 V VDS = 24 V 4 2 VGS = 10 V; 4.5 V 1.4 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 15 1.3 1.2 1.1 1.0 0.9 0.8 0 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 12 15 0.7 - 50 -- 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 65525 S09-2266-Rev. A, 02-Nov-09 New Product SiZ702DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.030 100 ID = 13.8 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.025 10 TJ = 150 °C TJ = 25 °C 1 0.020 TJ = 125 °C 0.015 TJ = 25 °C 0.010 0.005 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 1.9 50 1.8 1.7 40 1.6 ID = 250 µA 30 Power (W) VGS(th) (V) 1.5 1.4 1.3 20 1.2 1.1 10 1.0 0.9 0.8 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 1000 Limited by RDS(on)* 10 I D - Drain Current (A) 100 100 µs 1 ms 10 ms 1 100 ms 1 s, 10 s 0.1 TA = 25 °C Single Pulse DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 65525 S09-2266-Rev. A, 02-Nov-09 www.vishay.com 5 New Product SiZ702DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 40 20 Power (W) I D - Drain Current (A) 25 30 20 Package Limited 15 10 10 5 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 65525 S09-2266-Rev. A, 02-Nov-09 New Product SiZ702DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 67 °C/W 3. TJM - T A = PDMZthJA(t) 0.01 10 -4 4. Surface Mounted Single Pulse 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 65525 S09-2266-Rev. A, 02-Nov-09 www.vishay.com 7 New Product SiZ702DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 20 VGS = 10 V thru 4 V 16 I D - Drain Current (A) I D - Drain Current (A) 50 40 VGS = 3 V 30 20 12 TC = 25 °C 8 4 10 TC = 125 °C VGS = 2 V 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.014 1200 1000 0.012 VGS = 4.5 V 0.010 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.0 VGS = 10 V 800 600 400 Coss 0.008 200 Crss 0.006 0 0 10 20 30 40 50 60 0 5 ID - Drain Current (A) 10 20 25 30 VDS - Drain-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 10 1.7 1.6 ID = 13.8 A 8 ID = 13.8 A 1.5 VDS = 15 V 6 VDS = 7.5 V VDS = 24 V 4 2 VGS = 10 V; 4.5 V 1.4 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 15 1.3 1.2 1.1 1.0 0.9 0.8 0 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 12 15 0.7 - 50 -- 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 65525 S09-2266-Rev. A, 02-Nov-09 New Product SiZ702DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.030 100 ID = 13.8 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.025 10 TJ = 150 °C TJ = 25 °C 1 0.020 TJ = 125 °C 0.015 TJ = 25 °C 0.010 0.005 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 1.9 50 1.8 1.7 40 1.6 ID = 250 µA 30 Power (W) VGS(th) (V) 1.5 1.4 1.3 20 1.2 1.1 10 1.0 0.9 0.8 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 1 10 100 1000 Single Pulse Power Threshold Voltage 100 Limited by RDS(on)* 10 I D - Drain Current (A) 0.1 Time (s) TJ - Temperature (°C) 100 µs 1 ms 10 ms 1 100 ms 1 s, 10 s 0.1 TA = 25 °C Single Pulse DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 65525 S09-2266-Rev. A, 02-Nov-09 www.vishay.com 9 New Product SiZ702DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 30 25 20 30 20 Power (W) I D - Drain Current (A) 40 Package Limited 15 10 10 5 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 65525 S09-2266-Rev. A, 02-Nov-09 New Product SiZ702DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 67 °C/W 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 0.1 10 -4 Single Pulse 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65525. Document Number: 65525 S09-2266-Rev. A, 02-Nov-09 www.vishay.com 11 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1