APTGF50TL60T3G VCES = 600V IC = 50A @ Tc = 80°C Three level inverter NPT IGBT Power Module Application • Solar converter • Uninterruptible Power Supplies Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring 28 27 26 25 23 22 Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant 20 19 18 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 10/11/12 ; 7/8 … Q1 to Q4 Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C Max ratings 600 65 50 230 ±20 250 Tj = 125°C 100A @ 500V TC = 25°C TC = 80°C TC = 25°C Reverse Bias Safe Operating Area Unit V A March, 2009 Parameter Collector - Emitter Breakdown Voltage V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-8 APTGF50TL60T3G – Rev 0 Symbol VCES APTGF50TL60T3G All ratings @ Tj = 25°C unless otherwise specified Q1 to Q4 Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Tj = 25°C Tj = 125°C T j = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Min Typ VGE = 0V VCE = 600V 1.7 2.0 2.2 4 Max 250 500 2.45 Unit µA V 6 400 V nA Max Unit Q1 to Q4 Dynamic Characteristics Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Fall Time Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data VGE = 15V VBus = 300V IC = 50A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 50A RG = 2.7Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 50A RG = 2.7Ω VGE = 15V Tj = 125°C VBus = 400V IC = 50A Tj = 125°C RG = 2.7Ω VGE ≤15V ; VBus = 360V tp ≤ 10µs ; Tj = 125°C Junction to Case Thermal Resistance Min Typ 2200 323 200 166 20 100 40 9 pF nC ns 120 12 42 10 ns 130 21 0.5 mJ 1 225 A 0.5 °C/W March, 2009 RthJC Test Conditions VGE = 0V VCE = 25V f = 1MHz www.microsemi.com 2-8 APTGF50TL60T3G – Rev 0 Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr APTGF50TL60T3G CR1 to CR6 diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF Maximum Reverse Leakage Current Test Conditions VR=600V DC Forward Current IF = 30A IF = 60A IF = 30A VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge di/dt =200A/µs Err Reverse Recovery Energy IF = 30A VR = 400V IF = 30A VR = 400V Min 600 Tj = 25°C Tj = 150°C Tc = 80°C Typ Max 25 500 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 30 1.8 2.2 1.5 25 160 35 Tj = 125°C 480 Tj = 125°C 0.6 Unit V µA A 2.2 V ns nC mJ di/dt =1000A/µs RthJC Junction to Case Thermal Resistance 1.2 °C/W Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min Typ 50 5 3952 4 Max Unit kΩ % K % Min 2500 -40 -40 -40 2.5 Typ Max Unit V T25 = 298.15 K TC=100°C RT = R25 T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦ ⎣ Thermal and package characteristics Characteristic RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To heatsink M4 150 125 100 4.7 110 °C N.m g March, 2009 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight www.microsemi.com 3-8 APTGF50TL60T3G – Rev 0 Symbol VISOL TJ TSTG TC Torque Wt APTGF50TL60T3G SP3 Package outline (dimensions in mm) 28 17 1 12 www.microsemi.com 4-8 APTGF50TL60T3G – Rev 0 March, 2009 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTGF50TL60T3G Q1 to Q4 Typical performance curve Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 100 250µs Pulse Test < 0.5% Duty cycle 250µs Pulse Test < 0.5% Duty cycle Ic, Collector Current (A) 75 TJ=25°C 50 TJ=125°C 25 75 TJ=25°C 50 TJ=125°C 25 0 0 0 1 2 3 4 0 VCE, Collector to Emitter Voltage (V) 1 2 3 VCE, Collector to Emitter Voltage (V) Transfer Characteristics 250µs Pulse Test < 0.5% Duty cycle 75 50 TJ=125°C 25 TJ=25°C 0 0 1 2 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) VCE=120V IC = 50A TJ = 25°C 16 14 VCE=300V 12 VCE=480V 10 8 6 4 2 0 0 10 25 50 75 100 125 150 175 200 Gate Charge (nC) Breakdown Voltage vs Junction Temp. DC Collector Current vs Case Temperature 70 1.20 Ic, DC Collector Current (A) 1.10 1.00 0.90 0.80 25 50 75 100 60 50 40 30 20 10 125 TJ, Junction Temperature (°C) 0 25 50 75 100 125 150 TC, Case Temperature (°C) March, 2009 Collector to Emitter Breakdown Voltage (Normalized) Gate Charge 18 VGE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 100 4 www.microsemi.com 5-8 APTGF50TL60T3G – Rev 0 Ic, Collector Current (A) 100 APTGF50TL60T3G Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) VGE = 15V 50 40 Tj = 125°C VCE = 400V RG = 2.7Ω 30 20 0 25 50 75 100 125 175 150 VGE=15V, TJ=125°C 125 100 75 50 150 0 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current VCE = 400V RG = 2.7Ω tf, Fall Time (ns) tr, Rise Time (ns) VGE=15V, TJ=125°C 125 150 TJ = 125°C 30 20 TJ = 25°C 10 0 0 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 0 150 Turn-On Energy Loss vs Collector Current TJ=125°C, VGE=15V VCE = 400V RG = 2.7Ω 1.5 1 0.5 0 0 25 50 75 100 2.5 Eoff, Turn-off Energy Loss (mJ) 2 Eon, Turn-On Energy Loss (mJ) 100 40 10 125 VCE = 400V VGE = 15V RG = 2.7Ω 2 TJ = 125°C 1 0.5 0 150 0 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Reverse Bias Safe Operating Area 3 120 Eon, 50A 2 1.5 Eoff, 50A 1 0.5 100 80 March, 2009 IC, Collector Current (A) VCE = 400V VGE = 15V TJ= 125°C 150 1.5 Switching Energy Losses vs Gate Resistance 2.5 25 50 75 100 125 ICE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current ICE, Collector to Emitter Current (A) Switching Energy Losses (mJ) 75 VCE = 400V, VGE = 15V, RG = 2.7Ω 50 40 20 50 Current Fall Time vs Collector Current 60 30 25 ICE, Collector to Emitter Current (A) 60 50 VGE=15V, TJ=25°C VCE = 400V RG = 2.7Ω 60 40 20 Eon, 50A 0 0 0 5 10 15 20 Gate Resistance (Ohms) 25 0 200 400 600 VCE, Collector to Emitter Voltage (V) www.microsemi.com 6-8 APTGF50TL60T3G – Rev 0 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 60 APTGF50TL60T3G Capacitance vs Collector to Emitter Voltage Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) C, Capacitance (pF) 10000 Cies 1000 Coes Cres 100 0 10 20 30 40 240 VCE = 400V D = 50% RG = 2.7Ω TJ = 125°C TC= 75°C 200 hard switching 160 120 50 80 40 0 0 VCE, Collector to Emitter Voltage (V) 20 40 60 80 100 IC, Collector Current (A) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 March, 2009 0.5 www.microsemi.com 7-8 APTGF50TL60T3G – Rev 0 Thermal Impedance (°C/W) 0.6 APTGF50TL60T3G CR1 to CR6 Typical performance curve Forward Characteristic of diode 80 IF (A) 60 TJ=125°C 40 TJ=25°C 20 0 0.0 0.4 0.8 1.2 VF (V) 1.6 2.0 2.4 Switching Energy Losses vs Gate Resistance 1 0.75 0.75 0.5 E (mJ) E (mJ) Energy losses vs Collector Current 1 VCE = 400V VGE = 15V RG = 2.5Ω TJ = 125°C 0.25 20 40 60 VCE = 400V VGE =15V IC = 30A TJ = 125°C 0.25 0 0 0.5 0 80 0 2 4 6 8 Gate Resistance (ohms) IC (A) 10 Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 1.2 1 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 8-8 APTGF50TL60T3G – Rev 0 March, 2009 Rectangular Pulse Duration (Seconds)