AGILENT MSA-0836-TR1

Cascadable Silicon Bipolar
MMIC␣ Amplifiers
Technical Data
MSA-0835, -0836
0.5␣ GHz and can be used as a high
gain transistor below this frequency. Typical applications
include narrow and moderate band
IF and RF amplifiers in commercial
and industrial applications.
Features
• Usable Gain to 6.0␣ GHz
• High Gain:
32.5 dB Typical at 0.1␣ GHz
23.0 dB Typical at 1.0␣ GHz
• Low Noise Figure:
3.0␣ dB Typical at 1.0␣ GHz
• Cost Effective Ceramic
Microstrip Package
Description
The MSA-0835 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This MMIC is
designed for use as a general
purpose 50 Ω gain block above
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Available in cut lead version
(package␣ 36) as MSA-0836.
Typical Biasing Configuration
R bias
VCC > 10 V
RFC (Optional)
4
C block
C block
3
IN
1
2
5965-9596E
OUT
MSA
Vd = 7.8 V
6-414
35 micro-X Package[1]
Note:
1. Short leaded 36 package available
upon request.
MSA-0835, -0836 Absolute Maximum Ratings
Absolute Maximum[1]
80 mA
750 mW
+13 dBm
200°C
–65°C to 200°C
Parameter
Device Current
Power Dissipation [2,3]
RF Input Power
Junction Temperature
Storage Temperature [4]
Thermal Resistance[2,5]:
θjc = 175°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 5.7 mW/°C for TC > 69°C.
4. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.
5. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
GP
VSWR
Parameters and Test Conditions: Id = 36 mA, ZO = 50 Ω
Power Gain (|S21| 2)
f = 0.1 GHz
f = 1.0 GHz
f = 4.0 GHz
Units
Min.
Typ.
Max.
22.0
32.5
23.0
10.5
25.0
dB
Input VSWR
f = 1.0 to 3.0 GHz
2.0:1
Output VSWR
f = 1.0 to 3.0 GHz
1.5:1
NF
50 Ω Noise Figure
f = 1.0 GHz
dB
3.0
P1 dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
12.5
IP3
Third Order Intercept Point
f = 1.0 GHz
dBm
27.0
tD
Group Delay
f = 1.0 GHz
psec
125
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
V
mV/°C
7.0
7.8
8.4
–17.0
Note:
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number
MSA-0835
MSA-0836-BLK
MSA-0836-TR1
No. of Devices
10
100
1000
Container
Strip
Antistatic Bag
7" Reel
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-415
MSA-0835, -0836 Typical Scattering Parameters[1] (ZO = 50 Ω, TA = 25°C, Id = 36 mA)
S21
S11
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
.63
.58
.49
.40
.35
.33
.30
.30
.32
.34
.38
.39
.41
.52
–17
–33
–56
–70
–80
–89
–111
–133
–150
–170
175
162
132
95
32.5
31.5
29.1
26.7
24.6
22.9
19.5
16.9
14.9
13.2
11.7
10.5
7.9
5.8
42.02
37.52
28.50
21.54
17.01
13.98
9.45
7.03
5.53
4.56
3.86
3.33
2.47
1.94
161
145
119
103
92
82
64
48
39
26
14
2
–21
–45
–37.7
–33.7
–29.7
–27.9
–26.0
–24.9
–22.1
–20.2
–19.2
–18.3
–17.5
–16.7
–15.6
–14.6
.013
.021
.033
.040
.050
.057
.079
.098
.110
.122
.133
.146
.165
.187
55
47
54
55
53
52
51
44
42
36
32
27
19
7
.63
.56
.42
.32
.24
.18
.09
.07
.06
.06
.08
.12
.21
.20
–19
–37
–66
–84
–98
–107
–126
–141
–166
–106
–100
–101
–113
–149
0.72
0.73
0.72
0.78
0.85
0.89
0.95
0.99
1.04
1.06
1.08
1.08
1.10
1.05
Note:
1. A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
35
35
30
Gain Flat to DC
30
0.1 GHz
30
0.5 GHz
20
15
G p (dB)
25
Id (mA)
G p (dB)
25
35
TC = +125°C
TC = +25°C
TC = –55°C
20
1.0 GHz
20
2.0 GHz
15
10
10
0
0
0.1
0.3 0.5
1.0
3.0
6.0
0
2
4
6
8
5
10
10
Figure 1. Typical Power Gain vs.
Frequency, Id = 36 mA.
4.5
I d = 40 mA
14
11
10
P1 dB (dBm)
12
P1 dB
P1 dB (dBm)
13
12
4.0
I d = 36 mA
NF (dB)
GP
21
40
Figure 3. Power Gain vs. Current.
16
23
30
I d (mA)
Figure 2. Device Current vs. Voltage.
24
22
20
Vd (V)
FREQUENCY (GHz)
Gp (dB)
4.0 GHz
10
5
10
I d = 20 mA
I d = 36 mA
I d = 40 mA
3.5
8
NF (dB)
3.0
4
NF
6
I d = 20 mA
3
2
–55 –25
+25
+85
+125
4
0.1
2.5
0.2 0.3
0.5
1.0
2.0
4.0
0.1
0.2 0.3
0.5
1.0
2.0
TEMPERATURE (°C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
Id=36mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-416
35 micro-X Package Dimensions
.085
2.15
4
GROUND
.083 DIA.
2.11
RF OUTPUT
AND BIAS
A08
RF INPUT
1
3
.020
.508
2
.057 ± .010
1.45 ± .25
.022
.56
GROUND
.100
2.54
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.455 ± .030
11.54 ± .75
.006 ± .002
.15 ± .05
6-417