Cascadable Silicon Bipolar MMIC␣ Amplifiers Technical Data MSA-0235, -0236 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 2.7 GHz • 12.0 dB Typical Gain at 1.0␣ GHz • Unconditionally Stable (k>1) • Cost Effective Ceramic Microstrip Package Description The MSA-0235 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Available in cut lead version (package 36) as MSA-0236. Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block C block 3 IN 1 2 5965-9697E OUT MSA Vd = 5 V 6-274 35 micro-X Package[1] Note: 1. Short leaded 36 package available upon request. MSA-0235, -0236 Absolute Maximum Ratings Absolute Maximum[1] Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature[4] 60 mA 325 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,5]: θjc = 145°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 6.9 mW/°C for TC > 153°C. 4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. 5. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications[1], TA = 25°C Parameters and Test Conditions: Id = 25 mA, ZO = 50 Ω Symbol GP Power Gain (|S21| 2) f = 0.1 GHz ∆GP Gain Flatness f = 0.1 to 1.6 GHz f3 dB 3 dB Bandwidth VSWR Units Min. Typ. Max. dB 11.5 12.5 13.5 dB ± 0.6 ± 1.0 GHz 2.7 Input VSWR f = 0.1 to 3.0 GHz 1.2:1 Output VSWR f = 0.1 to 3.0 GHz 1.4:1 NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 4.5 IP3 Third Order Intercept Point f = 1.0 GHz dBm 17.0 tD Group Delay f = 1.0 GHz psec 125 Vd Device Voltage dV/dT Device Voltage Temperature Coefficient V mV/°C 4.5 5.0 5.5 –8.0 Note: 1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current is on the following page. Part Number Ordering Information Part Number No. of Devices Container MSA-0235 10 Strip MSA-0236-BLK 100 Antistatic Bag MSA-0236-TR1 1000 7" Reel For more information refer to PACKAGING section, “Tape and Reel Packaging for Semiconductor Devices.” 6-275 MSA-0235, -0236 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 25 mA) S21 S11 Freq. GHz Mag 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 .08 .08 .08 .08 .07 .07 .06 .03 .03 .09 .16 .20 .27 .41 S12 S22 Ang dB Mag Ang dB Mag Ang Mag Ang 170 163 147 130 112 91 47 –1 –115 –157 –175 173 136 94 12.6 12.5 12.5 12.4 12.2 12.1 11.6 11.0 10.2 9.3 8.3 7.2 5.2 3.2 4.25 4.23 4.19 4.14 4.09 4.02 3.80 3.53 3.24 2.92 2.60 2.29 1.81 1.44 176 171 161 152 143 134 112 91 75 57 39 23 –6 –33 –18.6 –18.5 –18.4 –18.3 –18.1 –18.0 –17.3 –16.3 –15.4 –15.1 –14.4 –14.1 –13.5 –13.5 .118 .119 .120 .121 .125 .126 .137 .153 .169 .176 .190 .198 .211 .212 2 2 4 4 7 10 11 10 12 8 3 –2 –11 –24 .16 .15 .15 .15 .15 .15 .13 .11 .09 .08 .09 .11 .15 .11 –6 –10 –21 –30 –39 –46 –66 –89 –111 –127 –129 –118 –117 –148 A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25°C (unless otherwise noted) 12 Gain Flat to DC I d (mA) G p (dB) 10 8 6 40 14 TC = +125°C TC = +25°C 30 T = –55°C C 12 G p (dB) 14 20 10 8 4 10 0.1 GHz 0.5 GHz 1.0 GHz 2.0 GHz 6 2 0 0.1 0.3 0.5 1.0 3.0 4 0 6.0 0 1 2 FREQUENCY (GHz) 5 15 6 12 10 6 5 P1 dB 5 8 6 4 6.5 I d = 25 mA 6.0 4 4 I d = 18 mA I d = 25 mA I d = 40 mA 2 3 2 –55 3 –25 +25 +85 40 I d = 40 mA NF (dB) 7 P1 dB (dBm) NF 6 35 7.0 8 8 30 7.5 GP 7 25 Figure 3. Power Gain vs. Current. 12 13 11 20 I d (mA) Figure 2. Device Current vs. Voltage. NF (dB) G p (dB) 4 Vd (V) Figure 1. Typical Power Gain vs. Frequency, TA = 25°C, Id = 25 mA. P1 dB (dBm) 3 2 +125 I d = 18 mA 0 0.1 0.2 0.3 5.5 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 4.0 TEMPERATURE (°C) FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Mounting Surface Temperature, f=1.0 GHz, Id = 25 mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. 6-276 35 micro-X Package Dimensions .085 2.15 4 GROUND .083 DIA. 2.11 RF OUTPUT AND BIAS A02 RF INPUT 1 3 .020 .508 2 .057 ± .010 1.45 ± .25 .022 .56 GROUND .100 2.54 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .455 ± .030 11.54 ± .75 .006 ± .002 .15 ± .05 6-277