GTM GM882

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GM882
NPN EPITAXIAL PLANAR T RANSISTOR
Description
The GM882 is suited for the output stage of 1.5W audio, voltage regulator , and relay driver.
Package Dimension
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5
TYP.
0.70 REF.
Absolute Maximum Ratings
Parameter
Junction Temperature
Symbol
Ratings
Tj
+150
Unit
Storage Temperature
Collector to Base Voltage at Ta=25
Tstg
-55 ~ +150
VCBO
40
V
Collector to Emitter Voltage at Ta=25
VCEO
30
V
Emitter to Base Voltage at Ta=25
VEBO
5.0
V
Collector Current at Ta=25
IC
3.0
A
Total Power Dissipation at Ta=25
PD
1.2
W
Characteristics
Symbol
at Ta = 25
Min.
Typ.
Max.
Unit
BVCBO
40
-
-
V
IC=100uA ,IE=0
Test Conditions
BVCEO
30
-
-
V
IC=1mA,IB=0
BVEBO
5
-
-
V
IE=10uA
ICBO
-
-
1
uA
VCB=30V
VEB=3V
IEBO
-
-
1
uA
VCE(sat)
-
-
0.5
V
IC=2A, IB=0.2A
VBE(sat)
-
-
2
V
IC=2A, IB=0.2A
hFE1
30
-
-
hFE2
100
-
500
VCE=2V, IC=20mA
VCE=2V, IC=1A
FT
-
90
-
MHz
Cob
-
45
-
Pf
Classification Of hFE
Rank
Range
Q
100-200
P
160-320
E
250-500
VCE=5V, IC=0.1A, f=100MHz
VCB=10V,IE=0, f=1MHz
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Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 FAX : 86-21-38950165