GTM GL5551

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GL5551
NP N E PITAX I AL PL ANAR T RANSI STOR
Description
The GL5551 is designer for general purpose applications requiring high breakdown voltages.
Package Dimensions
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
10
0
0.60
0.80
0.25
0.35
REF.
A
C
D
E
I
H
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13 TYP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Symbol
Ratings
Tj
+150
Unit
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
180
V
Collector to Emitter Voltage
VCEO
160
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
600
mA
Total Power Dissipation
PD
1.5
W
Characteristics
Symbol
at Ta = 25
Min.
Typ.
Max.
Unit
BVCBO
180
-
-
V
IC=100uA, IE=0
Test Conditions
BVCEO
160
-
-
V
IC=1.0Ma, IB=0
BVEBO
6
-
-
V
IE=10uA, IC=0
ICBO
-
-
50
nA
VCB=120V , IE=0
IEBO
-
-
50
nA
VEB=4V , IC=0
VCE(sat)1
-
-
0.15
V
IC=10mA, IB=1.0mA
VCE(sat)2
-
-
0.2
V
IC=50mA, IB=5mA
VBE(sat)1
-
-
1
V
IC=10mA, IB=1mA
VBE(sat)2
-
-
1
V
hFE1
80
-
-
hFE2
80
160
400
VCE=5V, IC=10mA
hFE3
50
-
-
VCE=5V, IC=50mA
fT
100
-
300
MHz
-
-
6
pF
Cob
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1MHz
Classification Of hFE
Rank
A
N
C
Range
80 - 200
100 - 250
160 - 400
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Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 FAX : 86-21-38950165