GTM GMBT3019

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GM BT3019
NP N E PITAXI AL P L ANAR T RANS ISTO R
Description
The GMBT3019 is designed for general purpose amplifier applications and switching requiring collector currents 1A.
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
0
10
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Symbol
Ratings
Tj
+150
Unit
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
140
V
Collector to Emitter Voltage
VCEO
80
V
Emitter to Base Voltage
VEBO
7
V
Collector Current
IC
1
A
Total Power Dissipation
PD
350
mW
Characteristics
Symbol
at Ta = 25
Min.
Typ.
Max.
Unit
BVCBO
140
-
-
V
IC=100uA
Test Conditions
BVCEO
80
-
-
V
IC=30mA
BVEBO
7
-
-
V
IE=100uA
ICBO
-
-
50
nA
VCB=90V
IEBO
-
-
50
nA
VEB=5V
VCE(sat)
-
-
0.2
V
IC=150mA, IB=15mA
V
IC=150mA, IB=15mA
VBE(sat)
-
-
1.1
hFE1
50
-
-
hFE2
90
-
-
VCE=10V, IC=10mA
hFE3
100
-
300
VCE=10V, IC=150mA
hFE4
50
-
-
VCE=10V, IC=500mA
hFE5
15
-
-
fT
100
-
-
MHz
-
-
12
pF
Cob
VCE=10V, IC=0.1mA
VCE=10V, IC=1000mA
VCE=50mV, IC=50mA, f=100MHz
VCE=10V, IE=0, f=1MHz
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4
FAX : 86-21-38950165