ISSUED DATE :2005/12/21 REVISED DATE :2006/03/29B GMPCR06 S E N S I T I V E G AT E S I L I C O N C O N T R O L L E D R E C T I F I E R S REVERSE BLOCKING THYRISTORS 0.8A, 400V Description The GMPCR06 PNPN device is designed for high volume, line-powered applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Features Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits On-state Current Rating of 0.8A RMS at 80 High Surge Current Capability 10A Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design Immunity to dV/dt - 20 V/ sec Minimum at 110 Glass-Passivated Surface for Reliability and Uniformity Package Dimensions SOT-89 REF. A B C D E F Absolute Maximum Ratings (TJ=25 Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF. REF. G H I J K L M unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off-State Voltage(Note1) (TJ=-40 to 110 , Sine Wave, 50 to 60Hz; Gate open) VDRM VRRM 400 V On-state RMS Current, (TC=80 ) 180 Conduction Angles IT(RMS) 0.8 A ITSM 10 A I 2t 0.415 A2S PGM 100 mW Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60Hz, TJ=25 ) Circuit Fusing Consideration (t=8.3ms) Forward Peak Gate Power (TA=25 , Pulse Width 1.0 s) Forward Average Gate Power (TA=25 , t=8.3ms) PG(AV) 10 mW Forward Peak Gate Current (TA=25 , Pulse Width 1.0 s) IGM 1.0 A Reverse Peak Gate Voltage (TA=25 , Pulse Width 1.0 s) V VGRM 5.0 Operating Junction Temperature Rang @ Rate VRRM and VDRM TJ -40 ~ +110 Storage Temperature Rage Tstg -40 ~ +150 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device function operation is not implied, damage may occur and reliability may be affected. Note 1.VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage: however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. GMPCR06 Page: 1/3 ISSUED DATE :2005/12/21 REVISED DATE :2006/03/29B Thermal Characteristics Characteristic Symbol Thermal Resistance, Junction-to-Ambient R Lead Solder Temperature (< 1/16” from case, 10 secs max) Electrical Characteristics (TC = 25 Unit 70 TL /W 260 unless otherwise noted) Characteristic Off Characteristics Peak Repetitive Forward or Reverse Blocking Current (Note2) TC=25 (VDRM=400V and VRRM=400V; RGK=1k ) TC=110 On Characteristics Peak Forward On-State Voltage* (ITM=1A Peak @TA=25 ) Gate Trigger Current (Continuous dc) (Note3) TC=25 (VAK=7.0 Vdc, RL=100 ) Holding Current (Note2) TC=25 TC=-40 (VAK=7.0 Vdc, Initiating Current=20mA) Latch Current TC=25 TC=-40 (VAK=7.0 Vdc, Ig=200 A) Gate Trigger Voltage (Continuous dc) (Note3) TC=25 TC=-40 (VAK=7.0 Vdc, RL=100 ) Dynamic Characteristics Critical Rate of Rise of Off-State Voltage (VD=400V, Exponential Waveform, RGK=1000 , TJ=110 ) Critical Rate of Rise of Off-State Current (IPK=20AV, PW =10 sec; diG/dt=1A/ sec, Igt=20mA) *Indicates Pulse Test: Pulse Width 1.0ms, Duty Cycle Note 2.RGK=1000 included in measurement. Note 3.Dose not include RGK in measurement. Max JA Symbol Min Typ Max Unit IDRM, IRRM - - 10 100 A VTM - - 1.7 V IGT - 50 100 A IH - IL - VGT - 0.5 0.6 0.62 - 5.0 10 10 15 0.8 1.2 dV/dt 20 35 - V/ s di/dt - - 50 A/ s mA mA V 1%. Voltage Current Characteristic of SCR Symbol VDRM IDRM VRRM IRRM VTM IH GMPCR06 Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current Page: 2/3 ISSUED DATE :2005/12/21 REVISED DATE :2006/03/29B Characteristics Curve Fig 1. Typical Gate Trigger Current v.s. Junction Temperature Fig 2. Typical Gate Trigger Voltage v.s. Junction Temperature Fig 3. Typical Holding Current v.s. Junction Temperature Fig 4. Typical Latching Current v.s. Junction Temperature Fig 5. Typical RMS Current Derating Fig 6. Typical On-State Characteristic Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GMPCR06 Page: 3/3