INFRARED DETECTOR PbS photoconductive detector P9217 series Room-temperature detectors capable of detecting up to 2.9 µm P9217 is a PbS photoconductive detector with greatly improved stability and resistance to high temperatures as compared with conventional types. Features Applications l High reliability: high temperature resistant l Radiation thermometers l Flame monitors l Water content analyzers l Food ingredient analysis l Spectrophotometers Accessories (Optional) l Preamplifier for PbS/PbSe photoconductive detector C3757-02 ■ Specification/Absolute maximum ratings Type No. P9217 P9217-02 P9217-03 P9217-04 Di m e nsional O utline/ Package Wi nd o w m aterial * 1 ➀/K ➀/K ➀/K ➁/K TO-5 TO-8 Absolute maximum ratings Cooling Non-cooled Active area (mm) 1×5 2×2 3×3 4×5 Supply voltage Operating temperature Topr Storage temperature Tstg (V) (°C) (°C) 100 -30 to +65 -55 to +65 ■ Electrical and optical characteristics (Typ. unless otherwise noted) Type No. Peak Photo sensitivity *2 Cut-off sensitivity S wavelength wavelength λ=λp λc Vs=15 V λp Min. Typ. (µm) (µm) (V/W) (V/W) D∗ (500, 600, 1) D∗ (λp, 600, 1) Min. Typ. (cm·Hz1/2/W) (cm·Hz1/2/W) (cm·Hz1/2/W) P9217 4 × 104 1 × 105 P9217-02 5 × 104 5 × 108 1 × 109 1 × 1011 2.2 2.9 P9217-03 2 × 104 5 × 104 P9217-04 1 × 104 3 × 104 2 × 108 5 × 108 5 × 1010 *1: Window material K: Borosilicate glass *2: Chopping frequency: 600 Hz, load resistance: nearly equal to detector element dark resistance. Rise time tr 0 to 63 % Max. (µs) 200 Dark resistance Rd (MΩ) 0.05 to 1 0.25 to 2.5 0.2 to 2.0 1 P9217 series PbS photoconductive detector ■ Spectral response ■ S/N vs. supply voltage (Typ. T=25 ˚C) 100 (Typ. Ta=25 ˚C) 800 8 7 SIGNAL 80 60 40 6 5 400 4 NOISE 2 LIGHT SOURCE: BLACK BODY 500 K INCIDENT ENERGY: 4.8 µW/cm2 1 CHOPPING FREQUENCY: 600 Hz FREQUENCY BANDWIDTH: 60 Hz 0 20 40 50 60 30 200 20 0 1 2 3 4 0 5 10 0 3 NOISE (µV) SIGNAL (µV) RELATIVE VALUE (%) 600 WAVELENGTH (µm) SUPPLY VOLTAGE (V) KIRDB0301EA KIRDB0046EA If voltage of higher than 60 V is applied, the noise increases exponentially, degrading the S/N. The device should be operated at 60 V or less. ■ Photo sensitivity temperature characteristic ■ S/N vs. chopping frequency (Typ. Ta=25 ˚C) 10 S 1 1 LIGHT SOURCE: BLACK BODY 500 K INCIDENT ENERGY: 4.8 µW/cm2 CHOPPING FREQUENCY: 600 Hz SUPPLY VOLTAGE: 15 V N 0.1 1 10 102 (Typ.) 10 RELATIVE SENSITIVITY (%) RELATIVE S/N LIGHT SOURCE: BLACK BODY 500 K INCIDENT ENERGY: 4.8 µW/cm2 SUPPLY VOLTAGE: 15 V tr: 200 µs S/N 0.1 -10 103 0 10 20 30 40 50 60 70 ELEMENT TEMPERATURE (˚C) CHOPPING FREQUENCY (Hz) KIRDB0047EC KIRDB0302EB Cooling the device enhances its sensitivity, but the sensitivity also depends on the load resistance in the circuit. Increasing the chopping frequency reduces the 1/f noise and results in an S/N improvement. The S/N can also be improved by narrowing the noise bandwidth using a lock-in amplifier. ■ Dark resistance, rise time temperature characteristics ■ Photo sensitivity linearity (Typ.) 10 RISE TIME 101 RELATIVE OUTPUT RELATIVE VALUE (%) (Typ. Ta=25 ˚C, FULLY ILLUMINATED) 102 1 DARK RESISTANCE 100 10-1 10-2 DEPENDENT ON NEP 0.1 -10 0 10 20 30 40 50 60 70 ELEMENT TEMPERATURE (˚C) 10-3 -9 10 10-8 10-7 10-6 10-5 10-4 INCIDENT ENERGY (W/cm2) KIRDB0303EB KIRDB0050EA By making the incident light spot smaller than the active area, the upper limit of the linearity becomes lower. 2 PbS photoconductive detector P9217 series ■ Dimensional outline (unit: mm) ➁ P9217-04 9.1 ± 0.3 13.9 ± 0.2 8.1 ± 0.1 WINDOW 5.9 ± 0.1 12.35 ± 0.1 CASE 4.9 ± 0.2 4.3 ± 0.2 0.45 LEAD 7.5 ± 0.2 2.3 ± 0.2 0.5 MAX. 0.45 LEAD PHOTOSENSITIVE SURFACE 18 MIN. 0.7 ± 0.1 2.3 ± 0.2 0.4 MAX. PHOTOSENSITIVE SURFACE WINDOW 10.5 ± 0.1 15 ± 1 ➀ P9217/-02/-03 1 MAX. 5.1 ± 0.2 1.5 MAX. CASE 45˚ 8 0. ± 0. 8 ± 0. 1 1 0. KIRDA0166EB KIRDA0181EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KIRD1065E03 Mar. 2007 DN