INFRARED DETECTOR InSb photoconductive detector P6606 series Thermoelectrically cooled detectors capable of long-term measurements Features Applications l Thermoelectric cooling ensures high speed and high l Environment measurements (gas analysis, etc.) sensitivity up to 6.5 µm. l Radiation thermometers (5 µm band) l Photoconductive element that changes electrical l FTIR resistance by input of IR radiation l IR laser detection l Easy-to-use detector/preamp modules are also available. Accessories (optional) l Heatsink for one-stage TE-cooled type A3179 l Heatsink for two-stage TE-cooled type A3179-01 l Heatsink for three-stage TE-cooled type A3179-04 l Temperature controller C1103-05 (-75 to -25 ˚C) C1103-07 (-30 to +20 ˚C) l Preamp C5185 l Infrared detector module with preamp P4631-03 (P6606-310) ■ Specifications / Absolute maximum ratings Type No. Di m e nsional outline/ Package Window 1 material * P6606-110 TO-8 ➀/S P6606-210 P6606-305 TO-3 P6606-310 ➁/S P6606-320 *1: Window material S: Sapphire glass Absolute maximum ratings Thermistor TE-cooler Operating Storage Allowable power power temperature temperature Cooling current dissipation dissipation Topr Tstg (mm) (mW) (A) (mA) (°C) (°C) One-stage TE-cooled 1.5 1×1 40 Two-stage TE-cooled 1.0 0.5 × 0.5 20 0.2 -40 to +60 -55 to +60 Three-stage TE-cooled 1 × 1 1.0 40 2×2 60 Active area ■ Electrical and optical characteristics (Typ. unless otherwise noted) Type No. Measure ment Peak Photo *2 condition sensitivity Cut-off sensitivity Element wavelength wavelength S te m p erature λc λp λ=λp T D∗ (500, 1200, 1) D∗ (λp, 1200, 1) Rise time tr 0 to 63 % Dark resistance Rd Min. Typ. (V/W) (cm·Hz1/2/W) (cm·Hz1/2/W) (cm·Hz1/2/W) (µs) (Ω) P6606-110 10 7 × 107 2 × 108 1 × 109 20 P6606-210 50 1.5 × 108 5 × 108 2.5 × 109 25 P6606-305 5.5 2500 1 × 109 2 × 109 1 × 1010 0.4 150 -60 6.3 P6606-310 650 1 × 109 2 × 109 1 × 1010 80 150 5 × 108 80 P6606-320 1 × 109 5 × 109 *2: Photo sensitivity changes with the bias current. The values in the above table are measured with the optimum bias current. (°C) -10 -30 (µm) (µm) 6.7 6.5 1 InSb photoconductive detector ■ Spectral response ■ D* vs. element temperature (Typ. T= -60 ˚C) 11 (Typ.) 11 10 1 1 D* (λ, 1200, 1) (cm · Hz2 /W) 10 D* (λ, 1200, 1) (cm · Hz2 /W) P6606 series 10 10 9 10 108 2 3 4 5 6 10 10 9 10 108 -60 7 -50 -40 -30 -20 -10 0 ELEMENT TEMPERATURE (˚C) WAVELENGTH (µm) KIRDB0166EB ■ Thermistor temperature characteristic KIRDB0167EA ■ Cooling characteristics of TE-cooler [Typ. Ta=25 ˚C, thermal resistance of heatsink=3 ˚C/W (one and two-stage TE-cooler), 1.2 ˚C/W (three-stage TE-cooler)] (Typ.) 40 ELEMENT TEMPERATURE (˚C) RESISTANCE 1 MΩ 100 kΩ 10 kΩ 1 kΩ -80 -60 -40 -20 0 20 40 ONE-STAGE TE-COOLED TYPE 0 TWO-STAGE TE-COOLED TYPE -20 -40 THREE-STAGE TE-COOLED TYPE -60 -80 0 0.4 0.8 1.2 1.6 TE-COOLER CURRENT (A) ELEMENT TEMPERATURE (˚C) KIRDB0168EA 2 20 KIRDB0177EA InSb photoconductive detector P6606 series ■ Current vs. voltage of TE-cooler [Typ. Ta=25 ˚C, thermal resistance of heatsink=3 ˚C/W (one and two-stage TE-cooler), 1.2 ˚C/W (three-stage TE-cooler)] 1.6 1.4 ONE-STAGE TE-COOLED TYPE CURRENT (A) 1.2 1.0 0.8 0.6 THREE-STAGE TE-COOLED TYPE 0.4 TWO-STAGE TE-COOLED TYPE 0.2 0.0 0 0.5 1.0 1.5 2.0 2.5 VOLTAGE (V) KIRDB0176EB ■ Measurement circuit CHOPPER 1200 Hz BAND-PASS FILTER r.m.s. METER DETECTOR BLACK BODY 500 K fo=1200 Hz ∆f=120 Hz INCIDENT ENERGY: 2.64 µW/cm2 KIRDC0005EA 3 InSb photoconductive detector P6606 series ■ Dimensional outlines (unit: mm) ➀ P6606-110/-210 15.3 ± 0.2 14 ± 0.2 a 12 MIN. 10.0 ± 0.2 WINDOW 10 ± 0.2 PHOTOSENSITIVE SURFACE 0.45 LEAD 5.1 ± 0.2 10.2 ± 0.2 DETECTOR DETECTOR TE-COOLER (-) TE-COOLER (+) THERMISTOR P6606-110 P6606-210 5.1 ± 0.2 a 10.2 ± 0.2 4.2 ± 0.2 6.6 ± 0.2 KIRDA0126EA ➁ P6606-305/-310/-320 39 25.4 ± 0.2 30.1 ± 0.1 4 25 MAX. 7.0 ± 0.2 2.0 PUMP-OUT PIPE 12 ± 1 1.0 LEAD 11.6 ± 0.2 19.4 ± 0.2 PHOTOSENSITIVE WINDOW 10 ± 0.2 SURFACE 5 MAX. TE-COOLER (+) DETECTOR THERMISTOR PUMP-OUT PIPE NC TE-COOLER (-) 40˚ 40˚ 40˚ 40˚ 40˚ 12.7 ± 0.2 KIRDA0127EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KIRD1026E06 4 May 2004 DN