InSb photoconductive detectors P6606 series Thermoelectrically cooled detectors capable of long-term measurements Features Applications Thermoelectric cooling ensures high speed and high sensitivity up to 6.5 μm. Environment measurements (gas analysis, etc.) Photoconductive element that changes electrical resistance by input of IR radiation Easy-to-use detector/preamp modules are also available. Radiation thermometers (5 μm band) FTIR IR laser detection Related products (sold separately) Heatsink for one/two-stage TE-cooled type A3179-01 Heatsink for three-stage TE-cooled type A3179-04 Temperature controller C1103-05 (-75 to -25 °C) C1103-07 (-30 to +20 °C) Preamp C5185-02 Infrared detector module with preamp P4631-03 (P6606-310) Specifications / Absolute maximum ratings Type no. P6606-110 P6606-210 P6606-305 P6606-310 P6606-320 Dimensional outline/ Package Window material*1 /S TO-8 /S TO-3 Absolute maximum ratings Photosensitive Operating Thermistor TE-cooler Storage Incideut Allowable area temperature temperature power power Cooling light level current Topr dissipation dissipation Tstg (mm) (mW) (mW) (A) (mA) (°C) (°C) One-stage TE-cooled 400 1.5 1×1 40 Two-stage TE-cooled 100 1.0 0.2 0.5 × 0.5 20 -40 to +60 -55 to +60 Three-stage 1×1 10 1.0 40 TE-cooled 2×2 60 *1: Window material S=Sapphire glass Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Typ. unless otherwise noted) Type no. Measurement Peak Photocondition Cutoff sensitivity sensitivity*2 wavelength Element S wavelength λc temperature λp λ=λp T D* (500, 1200, 1) D* (λp, 1200, 1) Rise time Thermistor Dark tr resistance resistance 0 to 63% Tc=25 °C Rd Min. Typ. (cm · Hz1/2/W) (cm · Hz1/2/W) (cm · Hz1/2/W) (μs) (Ω) (kΩ) P6606-110 7 × 107 2 × 108 1 × 109 20 P6606-210 1.5 × 108 5 × 108 2.5 × 109 25 5.5 P6606-305 1 × 109 2 × 109 1 × 1010 0.4 150 1.3 P6606-310 -60 6.3 1 × 109 2 × 109 1 × 1010 80 P6606-320 5 × 108 1 × 109 5 × 109 80 *2: Photosensitivity changes with the bias current. The values in the above table are measured with the optimum bias current. (°C) -10 -30 (μm) (μm) 6.7 6.5 (V/W) 10 50 2500 650 150 www.hamamatsu.com 1 InSb photoconductive detectors Spectral response D* vs. element temperature (P6606-310) (Typ.) 1011 P6606-310 (T=-60 °C) 10 1 10 (Typ.) 1011 D* (λ, 1200, 1) (cm · Hz 2 /W) D* (λp, 1200, 1) (cm · Hz1/2/W) P6606 series P6606-210 (T=-30 °C) 109 P6606-110 (T=-10 °C) 8 10 7 10 1 2 3 4 5 6 10 10 109 108 -60 7 Wavelength (µm) -50 -40 -30 -20 -10 Element temperature (°C) KIRDB0166EC KIRDB0167EA S/N vs. bias current (P6606-310) S/N vs. chopping frequency (Typ. Ta=25 °C) 160 103 140 (Typ. Ta=25 °C) Light source: 500 K Incident light level: 2.64 µW/cm2 Bias current: oprimum value S/N S (signal) S/N (Relative value) Relative value 120 0 D* 100 80 60 40 S (signal) 2 10 N (noise) N (noise) 20 0 0 5 10 15 20 25 30 Bias current (mA) 101 1 10 2 10 3 10 4 10 Chopping frequency (Hz) KIRDB0460EA Bias current must be in the range where D* is constant. KIRDB0461EA Increasing the chopping frequency reduces the 1/f noise and results in an S/N improvement. The S/N can also be improved by narrowing the noise bandwidth using a lock-in amplifier. 2 InSb photoconductive detectors Linearity P6606 series Dark resistance, rise time vs. element temperature (Typ. Ta=25 °C, fully illuminated) 104 (Typ. Ta=25 °C) 103 103 Rise time 10 Relative value Relative value 2 101 100 ŅŢųŬġųŦŴŪŴŵŢůŤŦ 102 -1 10 Dependent on NEP -2 10 -7 10 -6 -5 10 10 -4 10 -3 10 -2 10 -1 10 101 -80 0 10 -70 Incident light level (W/cm2) -60 -50 -40 -30 -20 -10 0 Element temperature (°C) KIRDB0462EA KIRDB0463EA Thermistor temperature characteristic Cooling characteristics of TE-cooler (Typ.) 1 MΩ 40 [Typ. Ta=25 °C, thermal resistance of heatsink=3 °C/W (one and two-stage TE-cooler), 1.2 °C/W (three-stage TE-cooler)] Bias current: 0 V Element temperature (°C) 20 Resistance 100 kΩ 10 kΩ One-stage TE-cooled type 0 Two-stage TE-cooled type -20 -40 Three-stage TE-cooled type -60 1 kΩ -80 -60 -40 -20 0 20 40 Element temperature (°C) -80 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 TE-cooler current (A) KIRDB0168EA KIRDB0177EB 3 InSb photoconductive detectors P6606 series Current vs. voltage of TE-cooler [Typ. Ta=25 °C, thermal resistance of heatsink=3 °C/W (one and two-stage TE-cooler), 1.2 °C/W (three-stage TE-cooler)] 1.6 1.4 One-stage TE-cooled type Current (A) 1.2 1.0 0.8 0.6 Three-stage TE-cooled type 0.4 Two-stage TE-cooled type 0.2 0.0 0 0.5 1.0 1.5 2.0 2.5 Voltage (V) KIRDB0500EA Measurement circuit Chopper 1200 Hz Band-pass filter RMS meter Detector Black body 500 K fo=1200 Hz Δf=120 Hz Incident energy 2.64 µW/cm2 KIRDC0005EB 4 InSb photoconductive detectors P6606 series Dimensional outlines (unit: mm) P6606-110/-210 15.3 ± 0.2 39 ± 0.2 14 ± 0.2 30.1 ± 0.1 4 ± 0.2 12 min. Photosensitive Window 10 ± 0.2 surface 11.6 ± 0.2 19.4 ± 0.2 7.0 ± 0.2 0.45 ± 0.1 Lead 25.4 ± 0.2 10.0 ± 0.2 Window 10 ± 0.2 a Photosensitive surface P6606-305/-310/-320 Pump-out pipe 12 ± 1 1.0 ± 0.1 Lead Detector Detector TE-cooler (-) TE-cooler (+) Thermistor 25 max. 2.0 ± 0.2 5.1 ± 0.2 10.2 ± 0.2 5 Max. P6606-110 P6606-210 5.1 ± 0.2 10.2 ± 0.2 a 4.2 ± 0.2 6.6 ± 0.2 12.7 ± 0.2 40 ° TE-cooler (+) Detector Thermistor Pump-out pipe NC TE-cooler (-) 40° 40° 40° 40° 40° KIRDA0126EB 40° KIRDA0127EC Information described in this material is current as of July, 2012. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KIRD1026E11 Jul. 2012 DN 5