PHOTODIODE Si photodiode S5668-11/-34 High sensitivity X-ray detectors Features Applications l 16-element photodiode array with scintillator S5668-11: CsI S5668-34: ceramic scintillator l High sensitivity compared with CWO S5668-11: 3.2 times S5668-34: 1.8 times l S5668-34: high reliability less afterglow, low cross-talk, low capacitance l X-ray fluorescence analysis l X-ray detection ■ Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 10 -10 to +60 -20 to +70 Unit V °C °C ■ Photodiode electrical and optical characteristics (Ta=25 °C, per element) Parameter Spectral response range Peak sensitivity wavelength Symbol λ λp Condition S5668-11 Typ. Max. 320 to 1100 960 0.31 0.56 - λ=540 nm λ=λp X-ray tube voltage= X-ray sensitivity Sx 5.8 120 kV * Dark current ID VR=10 mV 1 Terminal capacitance Ct VR=0 V, f=10 kHz 300 * Tube current=1.0 mA, aluminum filter: t=6 mm, distance=830 mm Photo sensitivity S S5668-34 Typ. Max. 320 to 1000 800 0.38 0.54 - Unit nm nm A/W A/W - 2.5 - nA 10 550 1 35 30 70 pA pF Note) Sensitivity values are just for your reference. Actual sensitivity values may vary depending on an equipment type and measurement conditions. 1 Si photodiode S5668-11/-34 ■ Dimensional outlines (unit: mm) S5668-11 25.4 +0 -0.3 1.0 ± 0.15 (18 ×) 0.45 P 2.54 × 8 = 20.32 BLACK RESIN 1 3 5 7 9 11 13 15 KC CsI ARRAY 3.0 t CsI (TI) 20.0 ± 0.2 2.0 SCINTILLATOR ARRAY 3.1 15.24 ± 0.1 C-2.0 MARK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Fe Ni Co ALLOY 0.6 ± 0.15 SCINTILLATOR ARRAY 25.2 GLASS EPOXY 1.175 KC 2 4 6 8 10 12 14 16 1.575 3.5 ± 0.5 P 1.575 × 15 = 23.625 (5.4) KMPDA0130EB S5668-34 25.4 +0 -0.3 (18 ×) 0.45 P 2.54 × 8 = 20.32 BLACK RESIN 3 5 7 9 11 13 15 KC CERAMIC SCINTILLATOR 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 20.0 ± 0.2 1 2.0 SCINTILLATOR ARRAY 3.1 15.24 ± 0.1 C-2.0 MARK 1.0 ± 0.15 Fe Ni Co ALLOY 0.6 ± 0.15 SCINTILLATOR ARRAY 25.2 GLASS EPOXY 1.175 KC 2 4 6 8 10 12 14 16 1.575 P 1.575 × 15 = 23.625 3.5 ± 0.5 (3.0) KMPDA0096EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KMPD1050E06 May 2007 DN