AGILENT MSA-0270

Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0270
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 2.8 GHz
• 12.0 dB Typical Gain at
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Hermetic Gold-ceramic
Microstrip Package
Description
The MSA-0270 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic,
high reliability package. This
MMIC is designed for use as a
general purpose 50 Ω gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in industrial and
military applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R bias
VCC > 7 V
RFC (Optional)
4
C block
C block
3
IN
1
2
5965-9698E
OUT
MSA
Vd = 5 V
6-278
70 mil Package
MSA-0270 Absolute Maximum Ratings
Absolute Maximum[1]
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
60 mA
325 mW
+13 dBm
200°C
–65 to 200°C
Thermal Resistance[2,4]:
θjc = 120°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 8.3 mW/°C for TC > 161°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 25 mA, ZO = 50 Ω
GP
Power Gain (|S21| 2)
f = 0.1 GHz
∆GP
Gain Flatness
f = 0.1 to 1.8 GHz
f3 dB
3 dB Bandwidth
VSWR
Units
Min.
Typ.
Max.
dB
11.5
12.5
13.5
dB
± 0.6
± 1.0
GHz
2.8
Input VSWR
f = 0.1 to 3.0 GHz
1.4:1
Output VSWR
f = 0.1 to 3.0 GHz
1.4:1
NF
50 Ω Noise Figure
f = 1.0 GHz
dB
6.5
P1 dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
4.5
IP3
Third Order Intercept Point
f = 1.0 GHz
dBm
17.0
tD
Group Delay
f = 1.0 GHz
psec
125
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
V
mV/°C
4.5
5.0
5.5
–8.0
Note:
1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current
is on the following page.
6-279
MSA-0270 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 25 mA)
S21
S11
Freq.
GHz
Mag
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
.11
.11
.10
.09
.08
.06
.02
.06
.11
.17
.22
.26
.28
.30
S12
S22
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
179
174
169
165
161
161
–150
–110
–112
–134
–147
156
179
143
12.6
12.6
12.5
12.4
12.3
12.2
11.7
11.1
10.3
9.3
8.2
7.0
4.7
3.0
4.26
4.24
4.21
4.17
4.11
4.05
3.85
3.57
3.27
2.92
2.56
2.23
1.72
1.41
176
171
162
154
146
137
116
96
82
65
48
33
8
–13
–18.4
–18.6
–18.4
–18.2
–18.2
–18.0
–17.2
–16.3
–15.7
–15.2
–14.7
–14.3
–14.0
–13.8
.120
.117
.120
.123
.123
.126
.138
.153
.165
.174
.185
.192
.199
.204
1
3
4
5
7
9
11
11
14
12
6
3
–6
–14
.12
.12
.13
.14
.14
.15
.16
.16
.14
.13
.15
.19
.27
.29
–8
–15
–30
–44
–55
–64
–84
–102
–106
–114
–111
–107
–107
–119
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
12
Gain Flat to DC
I d (mA)
G p (dB)
10
8
6
40
14
TC = +125°C
TC = +25°C
30 T = –55°C
C
12
G p (dB)
14
20
10
8
4
10
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
6
2
0
0.1
0.3 0.5
1.0
3.0
4
0
6.0
0
1
2
FREQUENCY (GHz)
5
15
6
12
10
6
5
P1 dB
5
8
6
4
6.5
I d = 25 mA
6.0
4
4
I d = 18 mA
I d = 25 mA
I d = 40 mA
2
3
2
–55
3
–25
+25
+85
40
I d = 40 mA
NF (dB)
7
P1 dB (dBm)
NF
6
35
7.0
8
8
30
7.5
GP
7
25
Figure 3. Power Gain vs. Current.
12
13
11
20
I d (mA)
Figure 2. Device Current vs. Voltage.
NF (dB)
G p (dB)
4
Vd (V)
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 25 mA.
P1 dB (dBm)
3
2
+125
I d = 18 mA
0
0.1
0.2 0.3
5.5
0.5
1.0
2.0
4.0
0.1
0.2 0.3
0.5
1.0
2.0
4.0
TEMPERATURE (°C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Mounting Surface Temperature,
f = 1.0 GHz, Id = 25 mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-280
70 mil Package Dimensions
.040
1.02
4
GROUND
.020
.508
RF OUTPUT
AND BIAS
RF INPUT
3
1
2
.004 ± .002
.10 ± .05
GROUND
.070
1.70
.495 ± .030
12.57 ± .76
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.035
.89
6-281