AGILENT INA

Low Noise, Cascadable
Silicon Bipolar MMIC Amplifier
Technical Data
INA-01170
Features
• Cascadable 50 Ω Gain Block
• Low Noise Figure:
1.7 dB Typical at 100 MHz
• High Gain:
32.5 dB Typical at 100 MHz
• 3 dB Bandwidth:
DC to 500␣ MHz
• Unconditionally Stable
(k>1)
• Hermetic Gold-Ceramic
Surface Mount Package
Description
The INA-01170 is a low-noise silicon
bipolar Monolithic Microwave
Integrated Circuit (MMIC) feedback
amplifier housed in a hermetic, high
reliability package. It is designed for
narrow or wide bandwidth industrial and military applications that
require high gain and low noise IF
or RF amplification.
70 mil Package
The INA series of MMICs is
fabricated using HP’s 10 GHz fT,
25␣ GHz f MAX, ISOSAT™-I silicon
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide intermetal dielectric and scratch protection to
achieve excellent performance,
uniformity and reliability.
Typical Biasing Configuration
VCC > 8 V
RFC (Optional)
Rbias (Required)
4
Cblock
RF IN
Cblock
3
1
2
RF OUT
Vd = 5.5 V
6-87
5965-9562E
INA-01170 Absolute Maximum Ratings
Thermal Resistance[2,4]:
θjc = 140°C/W
Absolute Maximum[1]
Parameter
Device Current
Power Dissipation [2,3]
RF Input Power
Junction Temperature
Storage Temperature
50 mA
400 mW
+13 dBm
200°C
–65 to 200°C
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 7.1 mW/°C for TC > 144°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
INA-01170 Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 35 mA, ZO = 50 Ω
GP
Power Gain (|S21| 2)
f = 100 MHz
∆GP
Gain Flatness
f = 10 to 250 MHz
f3 dB
3 dB Bandwidth[2]
ISO
Reverse Isolation (|S12| 2)
f = 10 to 250 MHz
Input VSWR
f = 10 to 250 MHz
VSWR
Output VSWR
f = 10 to 250 MHz
NF
50 Ω Noise Figure
f = 100 MHz
Units
Min.
Typ.
Max.
dB
30
32.5
35
dB
± 0.5
MHz
500
dB
39
1.6:1
1.5:1
dB
2.0
P1 dB
Output Power at 1 dB Gain Compression
f = 100 MHz
dBm
11
IP3
Third Order Intercept Point
f = 100 MHz
dBm
23
f = 100 MHz
psec
tD
Group Delay
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
V
2.5
200
4.0
5.5
mV/°C
7.0
+10
Notes:
1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 10 MHz Gain (GP).
INA-01170 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 35 mA)
Freq.
GHz
S11
Mag
Ang
dB
S21
Mag
0.01
0.05
0.10
0.15
0.20
0.25
0.30
0.40
0.50
0.60
0.80
1.0
1.5
2.0
2.5
3.0
.09
.10
.13
.17
.21
.25
.28
.33
.37
.40
.43
.44
.44
.44
.46
.48
–20
–39
–65
–83
–96
–107
–115
–130
–140
–150
–164
–176
165
154
148
139
32.8
32.8
32.6
32.4
32.1
31.8
31.5
30.7
29.9
29.0
27.4
25.8
21.8
17.9
14.6
11.4
43.65
–2
43.51
–9
42.82 –18
41.71 –26
40.41 –35
38.93 –43
37.38 –50
34.19 –65
31.13 –78
28.30 –90
23.48 –112
19.45 –132
12.37 –179
7.88 146
5.36 121
3.71
96
Ang
6-88
dB
S12
Mag
S22
Ang
Mag
Ang
k
–38.4
–38.3
–38.3
–38.4
–38.6
–39.0
–39.0
–39.3
–39.2
–38.9
–38.5
–36.5
–33.6
–33.0
–30.6
–30.0
.012
.012
.012
.012
.012
.011
.011
.011
.011
.011
.012
.015
.020
.022
.029
.032
–5
17
–4
17
12
26
3
21
11
22
30
32
42
42
36
45
.17
.18
.18
.19
.19
.19
.20
.21
.22
.23
.24
.23
.19
.13
.12
.10
–1
0
1
2
3
4
5
3
0
–5
–19
–32
–69
–106
–151
159
1.17
1.17
1.17
1.18
1.18
1.26
1.26
1.31
1.35
1.43
1.52
1.49
1.75
2.42
2.63
3.31
INA-01170 Typical Performance, TA = 25°C
(unless otherwise noted)
35
20
30
.05
0.1
0.2
0.5
20
10
1.0
1.0
0
2
4
6
8
Figure 1. Typical Gain and Noise Figure
vs. Frequency, TA = 25°C, Id = 35 mA.
Figure 2. Device Current vs. Voltage.
1.0
3.0
Id = 40 mA
Gp
12
31
11
9
2.5
Id = 35 mA
9
NF (dB)
13
P1 dB
P1 dB (dBm)
2.5
30
P1 dB (dBm)
Gp (mA)
0.2
Figure 3. Power Gain vs. Current.
15
33
.05
Id (mA)
Vd (V)
NF (dB)
15
.01
0
FREQUENCY (GHz)
32
1.0 GHz
25
20
1.5
.02
0.5 GHz
30
Id (mA)
2.0
Id (mA)
25
0.1 GHz
TMS = +125°C
TMS = +25°C
TMS = –55°C
40
2.5
NF (dB)
Gp (dB)
Gain Flat to DC
30
15
.01
35
50
3.0
Id = 30 mA
2.0
Id = 30 to 40 mA
6
7
2.0
NF
1.5
1.5
3
1.0
0.5
–55
–25
+25
+85
0
.02
+125
TEMPERATURE (°C)
.05
0.1
.040
1.02
GROUND
.020
.508
RF OUTPUT
AND BIAS
3
1
2
.004 ± .002
.10 ± .05
GROUND
.070
1.70
.495 ± .030
12.57 ± .76
1.0
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
70 mil Package Dimensions
RF INPUT
0.5
FREQUENCY (GHz)
Figure 4. Output Power and 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature, f = 0.1 GHz, Id = 35 mA.
4
0.2
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.035
.89
6-89
1.0
.02
.05
0.1
0.2
0.5
1.0
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.