Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-03170 Features • Cascadable 50 Ω Gain Block • Low Noise Figure: 2.5 dB Typical at 1.5 GHz • High Gain: 26.0 dB Typical at 1.5 GHz • 3 dB Bandwidth: DC to 2.8 GHz feedback amplifier housed in a hermetic, high reliability package. It is designed for narrow or wide bandwidth commercial, industrial and military applications that require high gain and low noise IF or RF amplification with minimum power consumption. 70 mil Package The INA series of MMICs is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, ISOSAT™-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability. • Unconditionally Stable (k>1) • Low Power Dissipation • Hermetic Gold-Ceramic Surface Mount Package Description The INA-03170 is a low-noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) Typical Biasing Configuration VCC > 7 V RFC (Optional) Rbias (Required) 4 Cblock RF IN Cblock 3 1 2 RF OUT Vd = 4.5 V 6-105 5965-9677E INA-03170 Absolute Maximum Ratings Thermal Resistance[2,4]: θjc = 150°C/W Absolute Maximum[1] Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature 25 mA 200 mW +13 dBm 200°C –65 to 200°C Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 6.7 mW/°C for TC > 170°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. INA-03170 Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: Id = 12 mA, ZO = 50 Ω Units Min. Typ. Max. dB 24.5 28.0 30.0 GP Power Gain (|S21| 2) f = 1.5 GHz ∆GP Gain Flatness f = 0.01 to 2.0 GHz f3 dB 3 dB Bandwidth[2] ISO Reverse Isolation (|S12| 2) f = 0.01 to 2.0 GHz Input VSWR f = 0.01 to 2.0 GHz 2.0[3] Output VSWR f = 0.01 to 2.0 GHz 3.0[3] NF 50 Ω Noise Figure f = 1.5 GHz VSWR dB ± 0.5 GHz 2.8 dB 37 dB 2.5 P1 dB Output Power at 1 dB Gain Compression f = 1.5 GHz dBm 1.0 IP3 Third Order Intercept Point f = 1.5 GHz dBm 10 tD Group Delay f = 1.5 GHz psec Vd Device Voltage f = 1.5 GHz V dV/dT Device Voltage Temperature Coefficient 3.0 200 4.0 5.3 mV/°C 6.0 +5 Notes: 1. The recommended operating current range for this device is 8 to 20 mA. Typical performance as a function of current is on the following page. 2. Referenced from 10 MHz Gain (GP). 3. VSWR can be improved by bypassing the bias directly to ground. INA-03170 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 12 mA) S11 S21 S12 S22 Freq. GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k 0.05 0.10 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.50 3.00 3.50 .35 .35 .34 .34 .33 .32 .32 .32 .31 .31 .30 .27 .15 .16 .28 178 176 172 164 158 152 147 141 133 125 117 106 94 159 150 26.6 26.6 26.6 26.5 26.4 26.3 26.2 26.2 26.3 26.5 26.8 26.9 26.6 23.7 19.8 21.48 21.42 21.37 21.19 20.91 20.69 20.48 20.40 20.73 21.15 21.84 22.20 21.48 15.32 9.81 –4 –7 –14 –28 –41 –54 –67 –80 –93 –106 –121 –138 –177 133 99 –35.9 –36.5 –36.5 –36.5 –38.4 –37.1 –36.5 –39.2 –37.7 –37.1 –35.4 –37.1 –35.4 –34.4 –35.4 .016 .015 .015 .015 .012 .014 .015 .011 .013 .014 .017 .014 .017 .019 .017 9 6 –1 –5 2 5 4 13 25 28 30 33 23 42 28 .56 .56 .56 .54 .53 .51 .50 .49 .48 .47 .46 .42 .31 .16 .19 –1 –4 –7 –13 –18 –22 –27 –32 –38 –45 –52 –62 –79 –72 –60 1.24 1.29 1.30 1.33 1.58 1.46 1.41 1.79 1.57 1.47 1.28 1.48 1.44 1.78 2.71 6-106 INA-03170 Typical Performance, TA = 25°C (unless otherwise noted) 30 30 25 5.0 TC = +125°C TC = +25°C TC = –55°C Gain Flat to DC 20 25 4.0 f = 0.1 – 2 GHz 25 10 0.1 0.2 0.5 1.0 f = 4 GHz 15 5 1.0 5.0 2.0 10 0 0 2 4 6 8 Figure 1. Typical Gain and Noise Figure vs. Frequency, TA = 25°C, Id = 12 mA. Figure 2. Device Current vs. Voltage. 15 20 25 Figure 3. Power Gain vs. Current. 8 27 10 Id (mA) Vd (V) 5.0 26 Gp Id = 20 mA 24 P1 dB 2 0 3.5 P1 dB (dBm) 4 4 Id = 12 mA 0 –2 2.0 3.0 Id = 8 mA Id = 8 mA NF 2.5 4.0 NF (dB) 25 P1 dB (dBm) Gp (dB) 5 10 FREQUENCY (GHz) NF (dB) 20 10 2.0 15 Id (mA) 3.0 Id (mA) 20 NF (dB) Gp (dB) f = 3 GHz 15 –4 2.0 Id = 12 to 20 mA 1.0 1.5 –55 –25 +25 +85 –8 0.1 +125 TEMPERATURE (°C) 0.2 0.5 .040 1.02 GROUND .020 .508 RF OUTPUT AND BIAS 3 1 2 .004 ± .002 .10 ± .05 GROUND .070 1.70 .495 ± .030 12.57 ± .76 5.0 Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. 70 mil Package Dimensions RF INPUT 2.0 FREQUENCY (GHz) Figure 4. Output Power and 1 dB Gain Compression, NF and Power Gain vs. CaseTemperature, f = 1.5 GHz, Id = 12 mA. 4 1.0 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .035 .89 6-107 1.0 0.1 0.2 0.5 1.0 2.0 5.0 FREQUENCY (GHz) Figure 6. Noise Figure vs. Frequency.