AGILENT ATF

0.5 – 10 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-25170
Features
• Low Noise Figure:
0.8␣ dB Typical at 4␣ GHz
• High Associated Gain:
14.0␣ dB Typical at 4␣ GHz
• High Output Power:
21.0␣ dBm Typical P 1 dB at 4␣ GHz
• Hermetic Gold-Ceramic
Microstrip Package
Description
The ATF-25170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
housed in a hermetic, high reliability package. Its noise figure makes
this device appropriate for use in
low noise amplifiers operating in
the 0.5-10 GHz frequency range.
70 mil Package
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
NFO
Optimum Noise Figure: VDS = 3 V, IDS = 20 mA
GA
Gain @ NFO: VDS =3 V, IDS = 20 mA
P1 dB
G1 dB
Power Output @ 1 dB Gain Compression:
VDS =5 V, IDS =50 mA
1 dB Compressed Gain: VDS =5 V, IDS =50 mA
gm
Transconductance: VDS = 3 V, VGS = 0 V
IDSS
Saturated Drain Current: VDS =3 V, VGS = 0 V
VP
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA
5-57
Units
Min.
Typ. Max.
f = 4.0 GHz
f = 6 0 GHz
f = 8.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 8.0 GHz
dB
dB
dB
dB
dB
dB
f = 4.0 GHz
dBm
21.0
f = 4.0 GHz
dB
15.0
13.0
0.8
1.0
1.2
14.0
11.5
9.0
1.0
mmho
50
80
mA
50
100
150
V
-3.0
-2.0
-0.8
5965-8712E
ATF-25170 Absolute Maximum Ratings
Symbol
VDS
VGS
VGD
IDS
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation [2,3]
Channel Temperature
Storage Temperature
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TMOUNTING SURFACE = 25°C.
3. Derate at 3.3 mW/°C for
TMOUNTING SURFACE >40°C.
4. The small spot size of this technique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section for
more information.
Absolute
Maximum[1]
+7
-4
-8
IDSS
450
175
-65 to +175
Units
V
V
V
mA
mW
°C
°C
θjc = 300°C/W; TCH = 150°C
1␣ µm Spot Size[4]
Thermal Resistance:
Liquid Crystal Measurement:
ATF-25170 Noise Parameters: VDS = 3 V, IDS = 20 mA
Γopt
Freq.
GHz
NFO
dB
Mag
Ang
1.0
2.0
4.0
6.0
8.0
0.6
0.7
0.8
1.0
1.2
.89
.77
.63
.66
.62
24
50
105
147
-159
RN/50
.78
.53
.33
.06
.11
ATF-25170 Typical Performance, TA = 25°C
2.0
12
1.5
9
|S21|2
1.0
6
5
2.0
4.0
6.0 8.0
12.0
FREQUENCY (GHz)
Figure 1. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 3 V, IDS = 20 mA.
10
1.5
NFO
0.5
1.0
12
0
2.0
NFO (dB)
MAG
GA
GA (dB)
GA
15
10
14
15
MSG
NFO (dB)
GAIN (dB)
20
0
0.5
16
18
NFO
1.0
0.5
0
4.0
6.0
8.0 10.0 12.0
FREQUENCY (GHz)
Figure 2. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 3V, IDS = 20 mA.
5-58
0
10
20
30
40
50
60
IDS (mA)
Figure 3. Optimum Noise Figure and
Associated Gain vs. IDS.
VDS = 3V, f = 4.0 GHz.
GA (dB)
25
Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 3 V, IDS␣ =␣ 20 mA
Freq.
GHz
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
Mag.
.98
.96
.88
.80
.77
.71
.65
.60
.56
.56
.55
.53
.53
S11
Ang.
-23
-38
-66
-86
-106
-127
-149
-173
161
136
118
108
95
S21
Mag.
4.80
4.46
3.75
3.23
2.93
2.66
2.47
2.33
2.20
2.05
1.87
1.76
1.71
dB
13.6
13.0
11.5
10.2
9.3
8.5
7.9
7.3
6.8
6.2
5.4
4.9
4.7
Ang.
160
147
121
102
82
62
42
24
5
-14
-31
-46
-62
A model for this device is available in the DEVICE MODELS section.
70 mil Package Dimensions
.040
1.02
SOURCE
4
.020
.508
GATE
DRAIN
3
1
2
SOURCE
.004 ± .002
.10 ± .05
.070
1.70
.495 ± .030
12.57 ± .76
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.035
.89
5-59
dB
-32.8
-23.6
-23.6
-21.8
-19.7
-18.6
-17.7
-16.5
-15.8
-15.1
-15.0
-14.9
-14.8
S12
Mag.
.023
.037
.066
.081
.103
.118
.130
.149
.162
.175
.178
.180
.183
S22
Ang.
76
67
50
41
28
17
6
-4
-16
-26
-35
-42
-52
Mag.
.50
.48
.44
.41
.38
.35
.30
.26
.22
.21
.21
.22
.23
Ang.
-23
-30
-45
-55
-65
-78
-93
-111
-134
-166
173
164
159