HANBIT HMF3M32M6V

HANBit
HMF3M32M6V
FLASH-ROM MODULE 12MByte (3M x 32-Bit) ,72pin-SIMM, 3.3V
Part No. HMF3M32M6V
GENERAL DESCRIPTION
The HMF3M32M6VA is a high-speed flash read only memory (FROM) module containing 6,291,456 words organized in a
x32bit configuration. The module consists of six 1M x 16 FROM mounted on a 72-pin, single-sided, FR4-printed circuit board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the
device is similar to reading from other flash or EPROM devices.
Output enable (/OE) and write enable (/WE) can set the memory input and output.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power
design. All module components may be powered from a single +3.0V DC power supply.
PIN ASSIGNMENT
FEATURES
w Access time : 70,80, 90 and 120ns
PIN
SYMBOL
PIN
SYMBOL
PIN
SYMBOL
1
Vss
25
DQ17
49
/WE
w High-density 12MByte design
2
/RESET
26
DQ18
50
A18
w High-reliability, low-power design
3
DQ0
27
DQ19
51
A17
w Single + 3V ± 0.3V power supply
4
DQ1
28
DQ20
52
A16
w Easy memory expansion
5
DQ2
29
DQ21
53
A15
6
DQ3
30
Vcc
54
A14
7
DQ4
31
DQ22
55
A13
8
DQ5
32
DQ23
56
A12
w Low profile 72-pin SIMM
9
DQ6
33
/CE_1H
57
A11
w Minimum 1,000,000 write/erase cycle
10
Vcc
34
/CE_2H
58
A10
11
DQ7
35
DQ24
59
Vcc
12
/CE_1L
36
DQ25
60
A9
w Embedded algorithms
13
/CE_2L
37
DQ26
61
A8
w Erase suspend / Erase resume
14
DQ8
38
DQ27
62
A7
15
DQ9
39
Vss
63
A6
16
DQ10
40
DQ28
64
A5
17
DQ11
41
DQ29
65
A4
18
DQ12
42
DQ30
66
A3
w Hardware reset pin(RESET#)
w FR4-PCB design
w Flexible sector architecture
OPTIONS
MARKING
w Timing
19
DQ13
43
DQ31
67
A2
70ns access
-70
20
DQ14
44
NC
68
A1
80ns access
-80
21
DQ15
45
NC
69
A0
22
23
24
NC
/CE_3H
DQ16
46
47
48
/CE_3L
A19
/OE
70
71
72
NC
NC
Vss
90ns access
-90
120ns access
-120
72-PIN SIMM
TOP VIEW
w Packages
72-pin SIMM
URL: www.hbe.co.kr
REV.02(August,2002)
M
1
HANbit Electronics Co., Ltd.
HANBit
HMF3M32M6V
FUNCTIONAL BLOCK DIAGRAM
DQ0 - DQ31
A0 – A19
32
20
A0-19
A0-19
DQ 0-15
/WE
/WE
/CE_1L
/OE
/CE
U1
A0-19
DQ 0-15
/WE
/OE
U2
/OE
/CE
/Reset
URL: www.hbe.co.kr
REV.02(August,2002)
/WE
/OE
/CE_1H
DQ16-31
U4
/CE_2H
A0-19
DQ16-31
DQ0-15
/WE
/RY_BY
A0-19
DQ 16-31
/CE
A0-19
/OE
/CE
RY-BY
/Reset
RY-BY
/Reset
/CE_3L
U3
/OE
/CE
/WE
DQ16-31
/Reset
/Reset
/CE_2L
/WE
RY-BY
RY-BY
/WE
DQ16-31
U5
/WE
/OE
RY-BY
RY-BY
DQ 16-31
U6
/CE
/CE_3H
/Reset
/Reset
2
HANbit Electronics Co., Ltd.
HANBit
HMF3M32M6V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
VIN,OUT
-0.5V to +4.0V
Voltage on Vcc Supply Relative to Vss
VCC
-0.5V to +4.0V
Power Dissipation
PD
6W
TSTG
-65oC to +150 oC
Voltage on Any Pin Relative to Vss
Storage Temperature
Operating Temperature
TA
-55oC to +125 oC
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause perman ent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
MIN
TYP.
MAX
Supply Voltage
VCC
2.7V
3.0V
3.6V
Ground
VSS
0
0
0
Input High Voltage
VIH
2.0
-
Vcc+0.3V
Input Low Voltage
VIL
-0.5
-
0.8V
PARAMETER
DC CHARACTERISTICS (CMOS Compatible)
PARAMET
DESCRIPTION
TEST CONDITIONS
MIN
TYP.
MAX
UNIT
±1.0
uA
35
uA
±1.0
uA
ER
ILI
Input Load Current
VIN=Vss to Vcc, Vcc=Vcc max
ILIT
A9 Input Load Current
Vcc= Vcc max ; A9=12.5V
ILO
Output Leakage Current
VOUT= Vss to Vcc, Vcc= Vcc max
/CE=VIK, /OE=VIH
5MHZ
9
16
Vcc Active Read Current
Byte Mode
1MHZ
2
4
(Note1)
/CE=VIL, /OE=VIH
5MHZ
9
16
Word Mode
1MHZ
2
4
/CE=VIL, /OE=VIH
20
30
mA
Vcc=Vcc max ; /CE,/Reset=Vcc±0.3V
0.2
5
uA
Vcc=Vcc max ; /Reset=Vss±0.3V
0.2
5
uA
0.2
5
uA
ICC1
mA
Vcc Active Write Current
ICC2
(Note 2 and 4)
ICC3
Vcc Standby Current
Vcc Standby Current
ICC4
During Reset
Automatic Sleep
VIH=Vcc±0.3V;
Mode(Note3)
VIL=Vss±0.3V
ICC5
VIL
Input Low Voltage
-0.5
0.8
V
VIH
Input High Voltage
0.7xVcc
Vcc+0.3
V
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REV.02(August,2002)
3
HANbit Electronics Co., Ltd.
HANBit
HMF3M32M6V
Voltage for Autoselect and
VID
Vcc=3.3V
11.5
12.5
V
0.45
V
Temporary Unprotect
VOL
Output Low Voltage
IOL=4.0mA, Vcc=Vcc min
0.85xVc
VOH1
IOH=-2.0mA, Vcc=Vcc min
V
c
Output High Voltage
VOH2
VLKO
IOH=-100uA, Vcc= Vcc min
Vcc-0.4
Low Vcc Lock-Out Voltage
V
2.3
2.5
V
Note :
1. The Icc current listed is typically less 2mA/MHz, with /OE at V IH. Typical Vcc is 3.0V.
2. Icc active while Embedded Erase or Embedded Program is progress.
3. Automatic sleep mode enables the low power mode when addresses remain stable for t ACC+30ns. Typical
sleep mode current is 200nA.
4. Not 100% tested.
LATCHUP CHARACTERISTICS
DESCRIPTION
MIN
MAX
-1.0V
12.5V
-1.0V
Vcc+1.0V
-100mA
+100mA
Input Voltage with respect to Vss on all pins except I/O Pins
(Including A9,/OE, and /Reset)
Input Voltage with respect to Vss on all I/O Pins
Vcc Current
Includes all pins except Vcc. Test conditions: Vcc=3.0V, one pin at a time.
DATA RETENTION
PARAMETER
TEST CONDITIONS
Minimum Pattern Data
MIN
UNIT
O
10
Years
O
20
Years
150 C
Retention Time
125 C
ERASE AND PROGRAMMING PERFORMANCE
TYP
PARAMETER
MAX (NOTE2)
UNIT
COMMENTS
15
s
Excludes 00h programming prior to
s
erasure (Note4)
(NOTE1)
Sector Erase Time
0.7
Chip Erase Time
25
Byte Programming Time
9
300
us
Word Programming Time
11
360
us
Chip Programming Time Byte Mode
18
54
s
12
36
s
Excludes system level overhead
(Note3)
Word Mode
(Note5)
Notes :
URL: www.hbe.co.kr
REV.02(August,2002)
4
HANbit Electronics Co., Ltd.
HANBit
HMF3M32M6V
O
1. Typical program and erase times assume the following conditions: 25 C, 3.0V Vcc, 1,000,000 cycles. Additionally
programming typical assume checkerboard pattern.
O
2. Under worst case conditions of 90 C, Vcc=2.7V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since
most bytes program faster than the maximum program times listed
4. In the pre-programming step of the Embedded Erase algorithm, all byt es are programmed to 00h before erasure.
5. System-level overhead is the time required to excute the two-or four-bus-cycle sequence for the program command.
See table 9 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
SOP/TSOP PIN CAPACITANCE
PARAMETER
PARAMETER
SYMBOL
DESCRIPTION
CIN
Input Capacitance
COUT
Output Capacitance
CIN2
Control Pin Capacitance
TEST SETUP
TYP.
MAX
UNIT
VIN = 0
6
7.5
pF
VOUT = 0
8.5
12
pF
VIN = 0
7.5
9
pF
Notes : 1. Sampled, not 100% tested
o
2.Test conditions T A = 25 C, f=1.0 MHz.
TEST SPECIFICATIONS
TEST CONDITION
80R
-90/ -120
Output load
UNIT
1TTL gate
Output load capacitance,
30
100
pF
CL (Including jig capacitance)
Input rise and fall times
5
ns
0.0 - 3.0
V
Input timing measurement reference levels
1.5
V
Output timing measurement reference levels
1.5
V
Input pulse levels
URL: www.hbe.co.kr
REV.02(August,2002)
5
HANbit Electronics Co., Ltd.
HANBit
HMF3M32M6V
3.0V
2.7kΩ
IN3064
or Equivalent
Device
Under
Test
CL
6.2kΩ
Diodes = IN3064
or Equivalent
Note : CL = 100pF including jig capacitance
AC CHARACTERISTICS
u Erase / Program Operations
PARAMETER SYMBOLS
DESCRIPTION
-80
-90
UNIT
80
90
ns
JEDEC
Standard
tAVAV
tWC
Write Cycle Time (Note1)
Min
tAVWL
tAS
Address Setup Time
Min
tWLAX
tAH
Address Hold Time
Min
45
45
ns
tDVWH
tDS
Data Setup Time
Min
35
45
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
Min
0
ns
0
ns
Read Recovery Time Before Write
tGHWL
tGHWL
(/OE High to /WE Low)
tELWL
tCS
/CE Setup Time
Min
0
ns
tWHEH
tCH
/CE Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
tWHWL
tWPH
Write Pulse Width High
Min
30
ns
Byte
Typ
9
us
tWHWH1
tWHWH1
Word
Typ
11
us
Sector Erase Operation (Note2)
Typ
0.7
sec
tVCS
Vcc Setup Time (Note1)
Min
50
us
tRB
Recovery Time from RY//BY
Min
0
ns
Program/ Erase Valid to RY//BY Delay
Min
90
ns
tWHWH2
tWHWH2
tBUSY
35
35
Programming Operation (Note2)
Note:
1. Not 100% tested.
URL: www.hbe.co.kr
REV.02(August,2002)
ns
6
HANbit Electronics Co., Ltd.
HANBit
HMF3M32M6V
2. See the "Erase and Programming Performance" section for more Information
u Alternate /CE Controlled Erase/ Program Operations
PARAMETER SYMBOLS
DESCRIPTION
-80
-90
UNIT
80
90
ns
JEDEC
Standard
tAVAV
tWC
Write Cycle Time (Note1)
Min
tAVEL
tAS
Address Setup Time
Min
tELAX
tAH
Address Hold Time
Min
45
45
ns
tDVEH
tDS
Data Setup Time
Min
35
45
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
Min
0
ns
0
ns
Read Recovery Time Before Write
tGHEL
tGHEL
(/OE High to /WE Low)
tWLEL
tWS
/WE Setup Time
Min
0
ns
tEHWH
tWH
/WE Hold Time
Min
0
ns
tELEH
tCP
/CE Pulse Width
Min
tEHEL
tCPH
/CE Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
tWHWH2
tWHWH2
35
35
Programming
Byte
Min
9
us
Operation (Note2)
Word
Min
11
us
Min
0.7
Sector Erase Operation (Note2)
Note: 1. Not 100% tested.
2. See the "Erase and Programming Performan ce" section for more Information.
URL: www.hbe.co.kr
REV.02(August,2002)
ns
7
HANbit Electronics Co., Ltd.
HANBit
HMF3M32M6V
u READ OPERATIONS TIMING
u RESET TIMING
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REV.02(August,2002)
8
HANbit Electronics Co., Ltd.
HANBit
HMF3M32M6V
u PROGRAM OPERATIONS TIMING
u CHIP/SECTOR ERASE OPERATION TIMINGS
URL: www.hbe.co.kr
REV.02(August,2002)
9
HANbit Electronics Co., Ltd.
HANBit
HMF3M32M6V
u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS)
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REV.02(August,2002)
10
HANbit Electronics Co., Ltd.
HANBit
HMF3M32M6V
u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS
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REV.02(August,2002)
11
HANbit Electronics Co., Ltd.
HANBit
HMF3M32M6V
PACKAGE DIMENSIONS
107.95± 0.2mm
3.38± 0.2 mm
17.5± 0.2mm
6.35± 0.2mm
1
72
2.03± 0.2 mm
6.35 ± 0.2mm
1.0± 0.2 mm
1.27± 0.2 mm
2.79 ± 0.2mm
95.25± 0.2 mm
2.54 mm
0.25 mm MAX
MIN
Gold: 1.04±0.10 mm
1.29±0.08 mm
Solder: 0.914±0.10 mm
1.27
(Solder & Gold Plating)
ORDERING INFORMATION
Part Number
Density
Org.
Package
HMF3M32M6V-70
12MByte
3MX 32bit
72 Pin-SIMM
HMF3M32M6V-80
12MByte
3MX 32bit
HMF3M32M6V-90
12MByte
HMF3M32M6V-120
12MByte
URL: www.hbe.co.kr
REV.02(August,2002)
Component
Vcc
Speed
6EA
3.3V
70ns
72 Pin-SIMM
6EA
3.3V
80ns
3MX 32bit
72 Pin-SIMM
6EA
3.3V
90ns
3MX 32bit
72 Pin-SIMM
6EA
3.3V
120ns
12
Number
HANbit Electronics Co., Ltd.