HANBIT HMFN16M16M8G

HANBit
HMFN16M16M8G
FLASH-ROM MODULE 32MByte (16M x 16-Bit)
Part No. HMFN16M16M8G
GENERAL DESCRIPTION
The HMFN16M16M8G is a high-speed NAND flash read only memory (FROM) module containing 16,777,216 words
organized in a x16bit configuration. The module consists of eight 4M x 8 FROM mounted on a 72 -pin, double-sided, FR4printed circuit board.
Data in the page can be read out at 50ns-cycle time per byte.
HMFN16M16M8G extended reliability of 1,000,000 program/erase cycles by providing either ECC (Error Correction
Code) or real time mapping out algorithm.
HMF16M16M8G is has address multiplexed into 16 I/O's . Command, address and data are all written through I/O's by
bringing /WE to low while /CE is low. Data is latched on th e rising edge of /WE. Command Latch Enable (CLE) and address
Latch Enable (ALE) are used to multiplex comma nd and address respectively, via the I/O pins.
FEATURES
PIN ASSIGNMENT
w High-density 32MByte design
PIN
w Single + 5V ± 0.5V power supply
SYMBOL
PIN
SYMBOL
PIN
SYMBOL
1
Vss
25
RB3
49
/CE3
2
I / O0
26
NC
50
/CE3
3
I / O1
27
NC
51
NC
4
I / O2
28
NC
52
NC
5
I / O3
29
NC
53
/WEL
6
I / O4
30
Vcc
54
NC
7
I / O5
31
NC
55
ALE
8
I / O6
32
Vss
56
NC
- Block Erase: (8K+256)Byte
9
I / O7
33
NC
57
NC
- Status Register
10
Vcc
34
NC
58
NC
11
/CE0
35
/RE
59
Vcc
12
/CE0
36
NC
60
NC
13
NC
37
NC
61
NC
w Command/Address/Data Multiplexed I/O port
w Organization
- Memory Cell Array: (4M+128K)bit x 8bit
- Data Register : (512+16)bit x 8bit
w Automatic Program and Erase
- Page Program: (512+16)Byte
w Fast Write Cycle Time
- Program time : 250us(typ.)
- Block Erase time : 2ms(typ.)
14
/CE1
38
NC
62
NC
w FR4-PCB design
15
NC
39
Vss
63
I / O8
w Low profile 72-pin SIMM
16
NC
40
/SE
64
I / O9
w Minimum 1,000,000 write/erase cycle
17
/WEH
41
NC
65
I / O10
OPTIONS
MARKING
w Packages
72-pin SIMM
M
18
NC
42
RB0
66
I / O11
19
CLE
43
RB1
67
I / O12
20
NC
44
NC
68
I / O13
21
NC
45
NC
69
I / O14
22
/WP
46
Vcc
70
I / O15
23
NC
47
NC
71
NC
24
RB2
48
/CE2
72
Vss
72-PIN SIMM
TOP VIEW
URL: www.hbe.co.kr
REV.02(August,2002)
1
HANBit Electronics Co., Ltd.
HANBit
HMFN16M16M8G
FUNCTIONAL BLOCK DIAGRAM
I/O(0-15)
RB3
RB2
RB1
RB0
/SE
/RE
CLE
ALE
I/O(0-7)
/RE
I/O(8-15)
/RE
CLE
/SE
CLE
/SE
RB0
ALE
ALE
U1
/WEL
/WP
U5
RB0
/WEH
/WP
/CE0
/WP
/CE0
/CE0
I/O(0-7)
/RE
I/O(8-15)
/RE
CLE
/SE
CLE
/SE
RB1
ALE
ALE
U2
/WEL
U6
RB1
/WEH
/CE1
/WP
/CE1
/WP
/CE1
I/O(0-7)
/RE
I/O(8-15)
/RE
CLE
/SE
CLE
/SE
RB2
ALE
ALE
U3
/WEL
U7
RB2
/WEH
/WP
/CE2
/WP
/CE2
/CE2
I/O(0-7)
/RE
I/O(8-15)
/RE
CLE
/SE
CLE
/SE
RB3
ALE
ALE
U4
/WEL
/WP
U8
RB3
/WEH
/CE3
/WP
/CE3
/CE3
/WEL
/WEH
URL: www.hbe.co.kr
REV.02(August,2002)
2
HANBit Electronics Co., Ltd.
HANBit
HMFN16M16M8G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
VIN
-0.6 to +7.0
V
TBIAS
-10 to +125
O
C
TSTG
-65 to +150
O
C
IOS
5
Voltage on any pin relative to Vss
Temperature Under Bias
Storage Temperature
Short Circuit Output Current
mA
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in
the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage reference to Vss, TA=0 to 70OC)
SYMBOL
MIN
TYP.
MAX
Supply Voltage
VCC
4.5V
5.0V
5.5V
Supply Voltage
VSS
0
0
0
PARAMETER
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted. )
PARAMETER
SYMBO
TEST CONDITION
MIN
TYP
MAX
UNIT
-
15
30
mA
-
15
30
mA
L
Sequential Read
ICC1
tcycle=50ns
Command, Address
ICC3
tcycle=50ns
/CE=VIL,IOUT=0mA
Operation
Input
Current
Data Input
ICC4
-
-
15
30
mA
Program
ICC6
-
-
15
30
mA
Erase
ICC7
-
-
25
40
mA
Stand-by Current (TTL)
ISB1
/CE=VIH,/WP=/SE=0V/Vcc
-
-
1
mA
Stand-by Current (CMOS)
ISB2
/CE=Vcc-0.2,/WP=/SE=0V/Vcc
-
10
100
uA
Input Leakage Current
ILI
VIN=0 to 5.5V
-
-
±10
uA
Output Leakage Current
ILO
VOUT= 0 to 5.5V
-
-
±10
uA
Input High Voltage, All inputs
VIH
2.0
-
Vcc+0.
V
-
5
Input Low Voltage, All inputs
VIL
Output High Voltage Level
VOH
IOH = -400Ua
Output Low Voltage Level
VOL
Output Low Current(R/B)
IOL(R/B)
URL: www.hbe.co.kr
REV.02(August,2002)
-
-0.3
-
0.8
V
2.4
-
-
V
IOL = 2.1Ma
-
-
0.4
V
VOL = 0.4V
8
10
-
mA
3
HANBit Electronics Co., Ltd.
HANBit
HMFN16M16M8G
AC TEST CONDITON (TA=0 to +70OC, Vcc =5V±10%, unless otherwise noted.)
PARAMETER
VALUE
Input Pulse Levels
0.4V to 2.6V
Input Rise and Fall Times
5ns
Input and Output Timinig Levels
0.8V and 2.0V
Output Load
1 TTL Gate and CL=100pF
CAPACITANCE (TA=25OC, Vcc=5V, f=1.0MHZ)
PARAMETER
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
Input/Output Capacitance
CI/O
VIL=0V
-
10
pF
Input Capacitance
CIN
VIN=0V
-
10
pF
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
CLE
ALE
/CE
H
L
L
/RE
/SE
/WP
L
H
X
X
H
L
H
X
X
H
L
L
H
X
H
L
H
L
H
X
H
L
L
L
H
L/H
(3)
H
Data Input
L/H
(3)
X
Sequential Read &Data Output
X
During Read(Busy)
H
During Program(Busy)
L
L
L
/WE
H
MODE
Read Mode
Command Input
Address Input(3clock)
Write Mode
Command Input
Address Input(3clock)
L
L
L
H
H
L/H
(3)
X
X
X
X
X
L/H
(3)
X
X
X
X
X
X
H
During Erase(Busy)
X
X
X
X
L
Write Protect
H
X
X
X
X
(1)
X
X
0V/Vcc
(2)
0V/Vcc
(2)
Stand-by
Note : 1. X can be VIL or VIH
2. /WP should be biased to CMOS high or CMOS low for standby
3. When /SE is high, spare area is deselected.
PROGRAM/ ERASE CHARACTERISTICS
PARAMETER
SYMBOL
MIN
TYP.
MAX
UNIT
Program Time
tPROG
-
0.25
1.5
ms
Number of Partial Program Cycles in the Same
Nop
-
-
10
Cycles
tBERS
-
2
10
ms
Page
Block Erase Time
URL: www.hbe.co.kr
REV.02(August,2002)
4
HANBit Electronics Co., Ltd.
HANBit
HMFN16M16M8G
AC TIMING CHARACTERISTICS FOR COMMAND / ADDRESS / DATA INPUT
PARAMETER
SYMBOL
MIN
MAX
UNIT
CLE Set-up Time
tCLS
0
-
ns
CLE Hold Time
tCLH
10
-
ns
/CE Setup Time
tCS
0
-
ns
/CE Hold Time
tCH
10
-
ns
/WE Pulse Width
tWP
25
-
ns
ALE Setup Time
tALS
0
-
ns
ALE Hold Time
tALH
10
-
ns
Data Setup Time
tDS
20
-
ns
Data Hold Time
tDH
10
-
ns
Write Cycle Time
tWC
50
-
ns
/WE High Hold Time
tWH
15
-
ns
AC CHARACTERISTICS FOR OPERATION
PARAMETER
SYMBOL
MIN
MAX
UNIT
tR
-
10
us
ALE to /RE Delay (Read ID)
tAR1
150
-
ns
ALE to /RE Delay (Read cycle)
tAR2
50
-
ns
/CE to /RE Delay (ID Read)
tCR
100
-
ns
Ready to /RE Low
tRR
20
-
ns
/RE Pulse Width
tRP
30
-
ns
/WE High to Busy
tWB
-
100
ns
Read Cycle Time
tRC
50
-
ns
/RE Access Time
tREA
-
35
ns
/RE High to Output Hi-Z
tRHZ
15
30
ns
/CE Hith to Output Hi-Z
tCHZ
-
20
ns
/RE High Hold Time
tREH
15
-
ns
Output Hi-Z to /RE Low
tIR
0
-
ns
Last /RE High to Busy (at sequential read)
tRB
-
100
ns
tCRY
-
/CE High Hold Time (at the last serial read)
tCEH
100
-
ns
/RE Low to status Output
tRSTO
-
35
ns
/CE Low to status Output
tCSTO
-
45
ns
/RE High to /WE Low
tRHW
0
-
ns
/WE High to /RE Low
tWHR
60
-
ns
tSR
-
500
us
Data Transfer from Cell to Register
/CE High to Ready (in case of interception by /CE at read)
(1)
Erase Suspend Input to Ready
URL: www.hbe.co.kr
REV.02(August,2002)
5
50+tr(R/B)
(2)
ns
HANBit Electronics Co., Ltd.
HANBit
HMFN16M16M8G
/RE access time (Read ID)
Device Resetting Time
tREADID
-
35
ns
tRST
-
5/10/500/5
us
Note: 1. If /CE goes high within 30ns after the rising edge of the last /RE, R//B Will not return to V
OL
2. The time to Ready depends on the value of the pull-up resistor tied R//B pin
3. To break the sequential read cycle, /CE must be held high for longer than t CEH.
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REV.02(August,2002)
6
HANBit Electronics Co., Ltd.
HANBit
HMFN16M16M8G
u READ OPERATIONS TIMING
u RESET TIMING
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REV.02(August,2002)
7
HANBit Electronics Co., Ltd.
HANBit
HMFN16M16M8G
u PROGRAM OPERATIONS TIMING
u CHIP/SECTOR ERASE OPERATION TIMINGS
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REV.02(August,2002)
8
HANBit Electronics Co., Ltd.
HANBit
HMFN16M16M8G
u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS)
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REV.02(August,2002)
9
HANBit Electronics Co., Ltd.
HANBit
HMFN16M16M8G
u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS
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REV.02(August,2002)
10
HANBit Electronics Co., Ltd.
HANBit
HMFN16M16M8G
PACKAGE DIMENSIONS
108mm
18.50 mm
7.35 mm
72
1
2.00 mm
1.02 mm
6.35 mm
1.27 mm
2.74 mm
95.25 mm
2.54 mm
0.25 mm MAX
MIN
Gold: 1.04±0.10 mm
1.27
1.29±0.08 mm
Solder: 0.914±0.10 mm
-
(Solder & Gold Plating)
ORDERING INFORMATION
Part Number
Density
Org.
Package
HMFN16M16M8G
32MByte
16MX 16bit
72 Pin-SIMM
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REV.02(August,2002)
11
Component
Number
8EA
Vcc
5V
Function
NAND,Perfect
Sector
HANBit Electronics Co., Ltd.