HI-SINCERITY Spec. No. : HT200103 Issued Date : 2001.12.01 Revised Date : 2005.12.02 Page No. : 1/4 MICROELECTRONICS CORP. HSB649T SILICON PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-126 Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation ....................................................................................................................................... 1 W Total Power Dissipation (TC=25°C) .................................................................................................................... 20 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage...................................................................................................................... -180 V BVCEO Collector to Emitter Voltage................................................................................................................... -160 V BVEBO Emitter to Base Voltage............................................................................................................................. -5 V IC Collector Current (DC) .................................................................................................................................. -1.5 A IC Collector Current (Pulse).................................................................................................................................. -3 A Thermal Characteristics RθJC Thermal Resistance, Junction to Case (Max.)..................................................................................... 6.25 °C/W Electrical Characteristics (TA=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO -180 - - V IC=-1mA, IE=0 BVCEO -160 - - V IC=-10mA, IB=0 BVEBO -5 - - V IE=-1mA, IC=0 ICBO - - -10 uA VCB=-160V, IE=0 *VCE(sat) - - -1 V IC=-500mA, IB=-50mA *VBE(on) - - -1.5 V IC=-150mA, VCE=-5V *hFE1 100 - 200 IC=-150mA, VCE=-5V *hFE2 30 - - IC=-500mA, VCE=-5V fT - 140 - MHz Cob - 27 - pF IC=-150mA ,VCE=-5V VCB=-10V, f=1MHz, IE=0 *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE1 Rank C Range 100-200 HSB649T HSMC Product Specification HI-SINCERITY Spec. No. : HT200103 Issued Date : 2001.12.01 Revised Date : 2005.12.02 Page No. : 2/4 MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current Saturation Voltage & Collector Current 10000 1000 o Saturation Voltage (mV) hFE VCE(sat) @ IC=10IB 75 C o 125 C o 25 C 100 1000 o 75 C o 125 C 100 o 25 C hFE @ VCE=5V 10 10 1 10 100 1000 1 10000 Collector Current-IC (mA) 10 100 1000 10000 Collector Current-IC (mA) Saturation Voltage & Collector Current Capacitance & Reverse-Biased Voltage 1000 100 o Capacitance (pF) Saturation Voltage (mV) 25 C o 75 C o 125 C Cob 10 VBE(ON) @ VCE=5V 100 1 1 10 100 1000 10000 Collector Current-IC (mA) 0.1 1 10 100 Reverse Biased Voltage (V) Safe Operating Area 10 Collector Current-IC (A) PT=1ms 1 PT=100ms PT=1s 0.1 0.01 1 10 100 1000 Forward Voltage-VCE (V) HSB649T HSMC Product Specification HI-SINCERITY Spec. No. : HT200103 Issued Date : 2001.12.01 Revised Date : 2005.12.02 Page No. : 3/4 MICROELECTRONICS CORP. TO-126 Dimension D DIM A B C D F G H J K L M N Marking: J A Pb Free Mark M H SB 649T Pb-Free: " . " (Note) Normal: None B 1 2 3 Date Code N Control Code K Note: Green label is used for pb-free packing Pin Style: 1.Emitter 2.Collector 3.Base C G Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 F H Min. 3.60 6.90 13.00 7.20 0.65 1.00 4.52 1.14 0.90 0.45 2.92 2.00 Max. 4.40 7.60 16.50 8.50 0.88 1.42 4.62 1.50 1.50 0.60 3.40 2.70 Unit: mm L 3-Lead TO-126 Plastic Package HSMC Package Code: T Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSB649T HSMC Product Specification HI-SINCERITY Spec. No. : HT200103 Issued Date : 2001.12.01 Revised Date : 2005.12.02 Page No. : 4/4 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245 C ±5 C 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HSB649T o o o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification