HI-SINCERITY Spec. No. : HM200205 Issued Date : 1995.12.18 Revised Date : 2004.09.16 Page No. : 1/4 MICROELECTRONICS CORP. HM669A NPN EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier complementary pair with HM649A SOT-89 Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ....................................................................................................................+150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ...................................................................................................................... 1 W Total Power Dissipation (TC=25°C) .................................................................................................................... 10 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage....................................................................................................................... 180 V BVCEO Collector to Emitter Voltage.................................................................................................................... 160 V BVEBO Emitter to Base Voltage.............................................................................................................................. 5 V IC Collector Current (DC) ................................................................................................................................... 1.5 A IC Collector Current (Pulse) ................................................................................................................................... 3 A Thermal Characteristic Symbol Characteristic Max. o Unit Rθja Thermal Resistance, junction to ambient (TA=25 C) 125 o Rθjc Thermal Resistance, junction to case (TC=25oC) 12.5 o C/W C/W Electrical Characteristics (TA=25°C) Symbol Min. Typ. Max. Unit BVCBO 180 - - V IC=1mA, IE=0 BVCEO 160 - - V IC=10mA, IB=0 BVEBO 5 - - V IE=1mA, IC=0 ICBO - - 10 uA VCB=160V, IE=0 *VCE(sat) - - 1 V IC=500mA, IB=50mA VBE(on) - - 1.5 V IC=150mA, VCE=5V *hFE1 100 - 320 IC=150mA, VCE=5V *hFE2 30 - - IC=500mA, VCE=5V fT - 140 - MHz Test Conditions IC=150mA , VCE=5V *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE1 Rank C D Range 100-200 180-320 HM669A HSMC Product Specification HI-SINCERITY Spec. No. : HM200205 Issued Date : 1995.12.18 Revised Date : 2004.09.16 Page No. : 2/4 MICROELECTRONICS CORP. Characteristics Curve Saturation Voltage & Collector Current Current Gain & Collector Current 1000 1000 Saturation Voltage (mV) VCE(s at) @ IC=10IB o hFE 125 C o 25 C 100 o 75 C hFE @ VCE=5V o 125 C o 75 C 100 o 25 C 10 10 1 10 100 1000 10000 10 100 Collector Current-IC (mA) 1000 10000 Collector Current-IC (mA) Saturation Voltage & Collector Current ON Voltage & Collector Current 1000 1000 o 25 C o 25 C o 125 C Saturation Voltage (mV) o o 75 C ON Voltage (mV) 75 C VBE(sat) @ IC=10IB 100 o 125 C VBE(ON) @ VCE=5V 100 1 10 100 1000 10000 Collector Current-IC (mA) 1 10 100 1000 10000 Collector Current-IC (mA) Safe Operating Area 10 Collector Current-IC (A) PT=1mS 1 PT=100mS PT=1S 0.1 0.01 1 HM669A 10 100 Forward Voltage (V) 1000 HSMC Product Specification HI-SINCERITY Spec. No. : HM200205 Issued Date : 1995.12.18 Revised Date : 2004.09.16 Page No. : 3/4 MICROELECTRONICS CORP. SOT-89 Dimension C DIM A B C D E F G H I Marking: H Date Code Control Code Pb Free Mark H 6 6 9 A D B 1 2 Pb-Free: " " (Note) Normal: None 3 Note: Green label is used for pb-free packing E J F G A I Pin Style: 1.Base 2.Collector 3.Emitter Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Min. 4.40 4.05 1.50 2.40 0.36 *1.50 *3.00 1.40 0.35 Max. 4.60 4.25 1.70 2.60 0.51 1.60 0.41 *: Typical, Unit: mm 3-Lead SOT-89 Plastic Surface Mounted Package HSMC Package Code: M Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HM669A HSMC Product Specification HI-SINCERITY Spec. No. : HM200205 Issued Date : 1995.12.18 Revised Date : 2004.09.16 Page No. : 4/4 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245 C ±5 C 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HM669A o o o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification