HI-SINCERITY Spec. No. : HA200214 Issued Date : 2002.08.01 Revised Date : 2004.06.18 Page No. : 1/4 MICROELECTRONICS CORP. HBF421 PNP EPITAXIAL PLANAR TRANSISTOR Description Video B-class Power stages in TV-receivers TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................................................... 830 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ........................................................................................................................ -300 V VCEO Collector to Emitter Voltage ..................................................................................................................... -300 V VEBO Emitter to Base Voltage ............................................................................................................................... -5 V IC Collector Current ........................................................................................................................................ -50 mA IBM Peak Base Current ................................................................................................................................... -50 mA ICM Peak Collector Current ........................................................................................................................... -100 mA Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO -300 - - V IC=-100uA, IE=0 BVCEO -300 - - V IC=-1mA, IB=0 BVEBO -5 - - V IE=-10uA, IC=0 ICBO - - -100 nA VCB=-200V, IE=0 IEBO - - -100 nA VEB=-5V, IE=0 *VCE(sat) - - -0.6 V IC=-30mA, IB=-3mA *hFE 50 - - fT 60 - - VCE=-20V, IC=-25mA MHz IE=-10mA, VCE=-10V, f=100MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% HBF421 HSMC Product Specification HI-SINCERITY Spec. No. : HA200214 Issued Date : 2002.08.01 Revised Date : 2004.06.18 Page No. : 2/4 MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current Saturation Voltage & Collector Current 1000 1000 VCE(sat) @ IC=6IB hFE Saturation Voltage (mV) hFE @ VCE=20V o 75 C o 125 C o 125 C 100 o 25 C o 75 C o 25 C 10 100 1 10 1 100 10 100 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current Saturation Voltage & Collector Current 1000 1000 o 25 C Saturation Voltage (mV) Saturation Voltage (mV) VCE(sat) @ IC=10IB o 125 C 100 o 25 C o 75 C o o 125 C 75 C VBE(s at) @ IC=10IB 10 100 1 10 100 1 10 Collector Current-IC (mA) 100 Collector Current-IC (mA) Capacitance & Reverse-Biased Voltage PD - Ta 100 0.9 PD(W), Power Dissipation Capacitance (pF) 0.8 10 Cob 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1 0.1 1 10 Reverse Biased Voltage (V) HBF421 100 0 50 100 150 200 o Ambient Temperature-Ta ( C ) HSMC Product Specification HI-SINCERITY Spec. No. : HA200214 Issued Date : 2002.08.01 Revised Date : 2004.06.18 Page No. : 3/4 MICROELECTRONICS CORP. TO-92 Dimension α2 A DIM A B C D E F G H I α1 α2 α3 Marking: Pb Free Mark Pb-Free: " . " (Note) Normal: None B 1 2 3 α3 H B F 4 2 1 Control Code Date Code Note: Green label is used for pb-free packing C D Pin Style: 1.Emitter 2.Collector 3.Base H Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 G Min. 4.33 4.33 12.70 0.36 3.36 0.36 - Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27 *5° *2° *2° *: Typical, Unit: mm α1 I E F 3-Lead TO-92 Plastic Package HSMC Package Code: A TO-92 Taping Dimension H2 H2A H2A H2 D2 A H3 H4 H L L1 H1 W1 W D1 F1F2 T2 T T1 P1 P P2 D DIM A D D1 D2 F1,F2 H H1 H2 H2A H3 H4 L L1 P P1 P2 T T1 T2 W W1 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 1 1 27 21 11 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00 Unit: mm Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HBF421 HSMC Product Specification HI-SINCERITY Spec. No. : HA200214 Issued Date : 2002.08.01 Revised Date : 2004.06.18 Page No. : 4/4 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec 100oC 150oC 60~120 sec 150oC 200oC 60~180 sec <3oC/sec <3oC/sec Time maintained above: - Temperature (TL) - Time (tL) 183oC 60~150 sec 217oC 60~150 sec Peak Temperature (TP) 240oC +0/-5oC 260oC +0/-5oC Time within 5oC of actual Peak Temperature (tP) 10~30 sec 20~40 sec Ramp-down Rate <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245 C ±5 C 5sec ±1sec Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time 25oC to Peak Temperature o 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HBF421 o o o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification