HI-SINCERITY Spec. No. : HT200101 Issued Date : 2000.05.01 Revised Date : 2005.12.02 Page No. : 1/5 MICROELECTRONICS CORP. HT112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HT112 is designed for use in general purpose amplifier and low-speed switching applications. TO-126 Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ................................................................................................................... 1.5 W Total Power Dissipation (TC=25°C) .................................................................................................................... 30 W • Thermal Resistance Junction To Case Rθjc................................................................................................................................... 4.2 oC/W • Maximum Voltages and Currents BVCBO Collector to Base Voltage....................................................................................................................... 100 V BVCEO Collector to Emitter Voltage .................................................................................................................... 100 V BVEBO Emitter to Base Voltage.............................................................................................................................. 5 V IC Collector Current ................................................................................................................................................ 4 A Electrical Characteristics (TA=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 100 - - V IC=1mA BVCEO 100 - - V IC=30mA ICBO - - 1 mA VCB=100V ICEO - - 2 mA VCE=50V IEBO - - 2 mA VEB=5V *VCE(sat) - - 2.5 V IC=2A, IB=8mA *VBE(on) - - 2.8 V IC=2A, VCE=4V *hFE1 1 - - K IC=1A, VCE=4V *hFE2 500 - - Cob - - 100 IC=2A, VCE=4V pF VCB=10V, IE=0 *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% HT112 HSMC Product Specification HI-SINCERITY Spec. No. : HT200101 Issued Date : 2000.05.01 Revised Date : 2005.12.02 Page No. : 2/5 MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current Current Gain & Collector Current 10000 10000 1000 1000 o 125 C 125oC o 75 C hFE hFE o 75 C 100 100 o o 25 C 25 C 10 10 hFE @ VCE=4V 1 hFE @ VCE=3V 1 1 10 100 1000 10000 1 10 Collector Current-IC (mA) VCE(sat) @ IC=250IB Saturation Voltage (mV) Saturation Voltage (mV) o 25 C o 125 C o 75 C 100 100 1000 o 1000 o 1000 10000 Collector Current-IC (mA) Saturation Voltage & Collector Current ON Voltage & Collcetor Current 10000 VBE(s at) @ IC=250IB VBE(ON) @VCE=4V o ON Voltage (mV) Saturation Voltage (mV) o 75 C 100 100 10000 10000 25 C o 125 C o 75 C 1000 Collector Current-IC (mA) HT112 25 C 125 C Collector Current-IC (mA) 100 100 10000 10000 VCE(sat) @ IC=100IB 1000 1000 Saturation Voltage & Collector Current Saturation Voltage & Collector Current 10000 1000 100 Collector Current-IC (mA) 10000 o 25 C 1000 o 125 C o 75 C 100 100 1000 10000 Collector Current-IC (mA) HSMC Product Specification HI-SINCERITY Spec. No. : HT200101 Issued Date : 2000.05.01 Revised Date : 2005.12.02 Page No. : 3/5 MICROELECTRONICS CORP. ON Voltage & Collcetor Current Switching Time & Collector Current 10000 10 VCC=30V, IC=250IB1= -250IB2 Switching Times (us)… ON Voltage (mV) VBE(ON) @ VCE=3V o 25 C 1000 o 125 C o 75 C Tstg 1 Tf Ton 100 100 0.1 1000 10000 1 10 Collector Current-IC (mA) Collector Current-IC (A) Capcitance & Reverse-Biased Voltage Safe Operating Area 100 10 Collector Current-IC (A) Capacitance (pF) PT=100mS Cob 10 PT=1S 1 0.1 0.01 0.1 1 10 Reverse Biased Voltage (V) HT112 PT=1mS 100 1 10 100 Forward Voltage (V) HSMC Product Specification HI-SINCERITY Spec. No. : HT200101 Issued Date : 2000.05.01 Revised Date : 2005.12.02 Page No. : 4/5 MICROELECTRONICS CORP. TO-126 Dimension D A Pb Free Mark M H 112 B 1 2 3 Date Code N DIM A B C D F G H J K L M N Marking: J T Pb-Free: " . " (Note) Normal: None Control Code K Note: Green label is used for pb-free packing Pin Style: 1.Emitter 2.Collector 3.Base C G F H L Min. 3.60 6.90 13.00 7.20 0.65 1.00 4.52 1.14 0.90 0.45 2.92 2.00 Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Max. 4.40 7.60 16.50 8.50 0.88 1.42 4.62 1.50 1.50 0.60 3.40 2.70 Unit: mm 3-Lead TO-126 Plastic Package HSMC Package Code: T Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HT112 HSMC Product Specification HI-SINCERITY Spec. No. : HT200101 Issued Date : 2000.05.01 Revised Date : 2005.12.02 Page No. : 5/5 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245 C ±5 C 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HT112 o o o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification