HI-SINCERITY Spec. No. : HD200204 Issued Date : 2002.04.01 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HTIP117D PNP EPITAXIAL PLANAR TRANSISTOR Description TO-126ML The HTIP117D is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic C Absolute Maximum Ratings (TA=25°C) B • Maximum Temperatures Storage Temperature ................................................................... -55 ~ +150 °C Junction Temperature .......................................................... +150 °C Maximum R1 R2 E • Maximum Power Dissipation Total Power Dissipation (TC=25°C) .................................................................................................................... 10 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage ...................................................................................................................... -100 V BVCEO Collector to Emitter Voltage ................................................................................................................... -100 V BVEBO Emitter to Base Voltage............................................................................................................................. -5 V IC Collector Current (Continue) ............................................................................................................................ -4 A ICP Collector Current (Peak) ................................................................................................................................. -6 A Electrical Characteristics (TA=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO -100 - - V IC=-1mA BVCEO -100 - - V IC=-30mA ICBO - - -1 mA VCB=-100V ICEO - - -2 mA VCE=-50V IEBO - - -2 mA VEB=-5V *VCE(sat) - - -2.5 V IC=-2A, IB=-8mA *VBE(on) - - -2.8 V IC=-2A, VCE=-4V *hFE1 1 - - K IC=-1A, VCE=-4V *hFE2 500 - - Cob - - 200 IC=-2A, VCE=-4V pF VCB=-10V, f=0.1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% HTIP117D HSMC Product Specification HI-SINCERITY Spec. No. : HD200204 Issued Date : 2002.04.01 Revised Date : 2005.08.18 Page No. : 2/4 MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current Saturation Voltage & Collcetor Current 10000 100000 o 75 C Saturation Voltage (mV) 10000 1000 o hFE 125 C 100 o 25 C o 75 C o 25 C 1000 o 125 C 10 VCE(sat) @ IC=250IB hFE @ VCE=4V 1 1 10 100 1000 100 100 10000 1000 Collector Current IC (mA) 10000 Collector Current IC (mA) ON Voltage & Collector Current Switching Time & Collector Current 10000 10 Switching Time (us) ON Voltage (mV) VCC=30V, IC=250IB1= -250IB2 o 75 C o 25 C 1000 o 125 C Tstg 1 Tf Ton VBE(ON) @ VCE=4V 100 0.1 1 10 100 1000 10000 1 10 Collector Current IC (mA) Collector Current-IC (A) Safe Operating Area Capacitance & Revierse-Biased Voltage 10 1000 Collector Current-IC (A) Capacitance (pF) PT=1ms 100 Cob PT=1s 1 PT=100ms 0.1 0.01 10 0.1 1 10 Reverse-Biased Voltage (V) HTIP117D 100 1 10 100 Forward Voltage-VCE (V) HSMC Product Specification HI-SINCERITY Spec. No. : HD200204 Issued Date : 2002.04.01 Revised Date : 2005.08.18 Page No. : 3/4 MICROELECTRONICS CORP. TO-126ML Dimension A C DIM A B C D E F G H I J K L M N Marking: L Pb Free Mark D H T I P 1 1 7D E Pb-Free: " . " (Note) Normal: None I Date Code B 1 2 Control Code Note: Green label is used for pb-free packing 3 Pin Style: 1.Emitter 2.Collector 3.Base F H Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 M G K J N Min. 7.74 10.87 0.88 1.28 3.50 2.61 13 1.18 2.88 0.68 3.44 1.88 0.50 Max. 8.24 11.37 1.12 1.52 3.75 3.37 1.42 3.12 0.84 2.30 3.70 2.14 0.51 *: Typical, Unit: mm 3-Lead TO-126ML Plastic Package HSMC Package Code: D Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HTIP117D HSMC Product Specification HI-SINCERITY Spec. No. : HD200204 Issued Date : 2002.04.01 Revised Date : 2005.08.18 Page No. : 4/4 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245 C ±5 C 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HTIP117D o o o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification