HSMC HMBT28S

HI-SINCERITY
Spec. No. : HN200213
Issued Date : 2002.08.01
Revised Date : 2004.09.01
Page No. : 1/4
MICROELECTRONICS CORP.
HMBT28S
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT28S is a NPN silicon transistor, designed for use in general-purpose
SPEECH SYNTHSIZER (Voice Rom) IC audio output driver stage amplifier
applications.
SOT-23
Features
• Excellent hFE Linearity
• High DC Current Gain
• High Power Dissipation
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ..................................................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ............................................................................................................... 225 mW
• Maximum Voltages and Currents (TA=25°C)
VCBO Collector to Base Voltage ........................................................................................................................... 40 V
VCEO Collector to Emitter Voltage ........................................................................................................................ 20 V
VEBO Emitter to Base Voltage ................................................................................................................................ 6 V
IC Collector Current .......................................................................................................................................... 1.25 A
IB Base Current .................................................................................................................................................. 0.4 A
Electrical Characteristics (TA=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
40
-
-
V
IC=100uA, IE=0
BVCEO
20
-
-
V
IC=1mA, IB=0
BVEBO
6
-
-
V
IE=100uA, IC=0
ICBO
-
-
100
nA
VCB=35V, IE=0
IEBO
-
-
100
nA
VEB=6V, IC=0
*VCE(sat)
-
-
0.55
V
IC=600mA, IB=20mA
*hFE1
290
-
-
VCE=1V, IC=1mA
*hFE2
300
-
1000
VCE=1V, IC=0.1A
hFE3
300
-
-
VCE=1V, IC=0.3A
hFE4
300
-
-
VCE=1V, IC=0.5A
fT
100
-
-
MHz
Cob
-
9
-
pF
VCE=10V, IC=50mA, f=1MHz
VCB=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE2
Rank (Marking Code)
B (3FB)
C (3FC)
D (3FD)
Range
300-550
500-700
650-1000
HM28S
HSMC Product Specification
HI-SINCERITY
Spec. No. : HN200213
Issued Date : 2002.08.01
Revised Date : 2004.09.01
Page No. : 2/4
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
Saturation Voltage & Collector Current
1000
1000
VCE(sat) @ IC=30IB
o
Saturation Voltage (mV)
hFE
125 C
o
75 C
o
25 C
hFE @ VCE=1V
100
o
75 C
o
25 C
o
125 C
10
100
0.1
1
10
100
0.1
1000
Collector Current-IC (mA)
10
100
1000
Collector Current-IC (mA)
Capacitance & Reverse-Biased Voltage
Cutoff Frequency & Collector Current
1000
Cutoff Frequency (MHz)...
100
Capacitance (pF)
1
10
Cob
1
fT
100
10
1
0.1
1
10
100
1000
Reverse Biased Voltage (V)
1
10
100
1000
Collector Current (mA) -VCE=10V
PD-Ta
Power Dissipation-PD (mW)
250
200
150
100
50
0
0
50
100
150
200
o
Ambient Temperature-Ta ( C)
HM28S
HSMC Product Specification
HI-SINCERITY
Spec. No. : HN200213
Issued Date : 2002.08.01
Revised Date : 2004.09.01
Page No. : 3/4
MICROELECTRONICS CORP.
SOT-23 Dimension
DIM
A
B
C
D
G
H
J
K
L
S
V
Marking:
A
Rank Code
L
(B,C,D)
3 F
Pb Free Mark
3
Pb-Free: " " (Note)
Normal: None
B S
1
V
2
Note: Pb-free product can distinguish by the green
label or the extra description on the right
side of the label.
G
Pin Style: 1.Base 2.Emitter 3.Collector
D
H
K
Max.
3.04
1.60
1.30
0.50
2.30
0.10
0.177
0.67
1.15
2.75
0.65
*: Typical, Unit: mm
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
C
Min.
2.80
1.20
0.89
0.30
1.70
0.013
0.085
0.32
0.85
2.10
0.25
J
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HM28S
HSMC Product Specification
HI-SINCERITY
Spec. No. : HN200213
Issued Date : 2002.08.01
Revised Date : 2004.09.01
Page No. : 4/4
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
tP
Critical Zone
TL to TP
TP
Ramp-up
TL
tL
Temperature
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
<3 C/sec
<3oC/sec
- Temperature Min (Tsmin)
100oC
150oC
- Temperature Max (Tsmax)
150oC
200oC
60~120 sec
60~180 sec
<3oC/sec
<3oC/sec
183oC
217oC
Average ramp-up rate (TL to TP)
o
Preheat
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
60~150 sec
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
o
o
60~150 sec
240 C +0/-5 C
260oC +0/-5oC
10~30 sec
20~40 sec
<6oC/sec
<6oC/sec
<6 minutes
<8 minutes
Peak temperature
Dipping time
245 C ±5 C
5sec ±1sec
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
HM28S
o
o
o
o
260 C +0/-5 C
5sec ±1sec
HSMC Product Specification