HI-SINCERITY Spec. No. : HJ200301 Issued Date : 2001.11.30 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HSB1386J LOW FREQUENCY TRANSISTOR (-20V, -4A) Features • Low VCE(sat). VCE(sat)=-0.55V(Typ.) (IC/IB=-4A/-0.1A) • Excellent DC current gain characteristics. TO-252 Structure Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings (TA=25°C) Symbol Parameter Limits Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V -4 A -10 A(Pulse)* IC Collector Current PD Collector Power Dissipation (TC=25oC) Tj 20 150 C -55~+150 o C Junction Temperature Tstg Storage Temperature W o Electrical Characteristics (TA=25°C) Symbol Parameter Min. Typ. Max. Unit Test Conditions BVCBO Collector-Base Breakdown Voltage -30 - - V IC=-50uA BVCEO Collector-Emitter B reakdown Voltage -20 - - V IC=-1mA BVEBO Emitter-Base Breakdown Voltage -6 ICBO Collector Cutoff Current - - -0.5 uA VCB=-20V IEBO Emitter Cutoff Current - - -0.5 uA VEB=-5V Collector-Emitter Saturation Voltage - - -1 V IC/IB=-4A/-0.1A 82 - 580 *VCE(sat) *hFE DC Current Transfer Ratio IC=-50uA fT Transition Frequency - 110 - Cob Output Capacitance - 30 - VCE=-2V, IC=-0.5A MHz VCE=-6V, IE=50mA, f=30MHz pF VCB=-20V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE Rank P Q R E Range 82-180 120-270 180-390 370-580 HSB1386J HSMC Product Specification HI-SINCERITY Spec. No. : HJ200301 Issued Date : 2001.11.30 Revised Date : 2005.07.14 Page No. : 2/4 MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current Saturation Voltage & Collector Current 1000 Saturation Voltage (mV) hFE 1000 hFE @ VCE=2V 100 100 VCE(sat) @ IC=20IB VCE(sat) @ IC=40IB 10 1 1 10 100 1000 10000 1 Collector Current-IC (mA) 100 1000 10000 Collector Current-IC (mA) Saturation Voltage & Collector Current Capacitance & Reverse-Biased Voltage 1000 Capacitance (pF) 10000 Saturation Voltage (mV) 10 1000 VBE(sat) @ IC=20IB 100 100 Cob 10 1 10 100 1000 10000 0.1 Collector Current-IC (mA) 1 10 100 Reverse Biased Voltage (V) Power Derating Safe Operating Area 10 25 Collector Current-IC (A) PD(W) , Power Dissipation 20 15 10 PT=1mS 1 PT=100mS PT=1S 0.1 5 0 0.01 0 HSB1386J 20 40 60 80 100 o Tc( C) , Ambient Temperature 120 140 1 10 100 Forward Voltage (V) HSMC Product Specification HI-SINCERITY Spec. No. : HJ200301 Issued Date : 2001.11.30 Revised Date : 2005.07.14 Page No. : 3/4 MICROELECTRONICS CORP. TO-252 Dimension A DIM A C F G H L M N a1 a2 a5 Marking: M a1 Pb Free Mark Pb-Free: " . " (Note) H Normal: None SB 1 3 8 6 J F C Date Code Control Code Note: Green label is used for pb-free packing G Pin Style: 1.Base 2.Collector 3.Emitter 2 1 N 3 H a5 Max. 6.80 5.50 1.70 6.25 3.00 0.90 2.40 1.50 0.65 *2.30 1.05 *: Typical, Unit: mm a1 a2 L Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Min. 6.35 4.80 1.30 5.40 2.20 0.40 2.20 0.90 0.40 0.65 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J M F Pb Free Mark Pb-Free: " . " (Note) H Normal: None SB 1 3 8 6 J a1 y1 E Date Code y1 Pin Style: 1.Base 2.Collector 3.Emitter y1 H J N L a2 a1 Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 O a2 y2 Control Code Note: Green label is used for pb-free packing GI K DIM A B C D E F G H I J K L M N O a1 a2 y1 y2 Marking: A B C D a1 y2 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J Min. 6.40 5.04 0.40 0.50 5.90 2.50 9.20 0.60 0.66 2.20 0.70 0.82 0.40 2.10 - Max. 6.80 6.00 5.64 *4.34 0.80 0.90 6.30 2.90 9.80 1.00 0.96 0.86 2.40 1.10 1.22 0.60 2.50 5o 3o *: Typical, Unit: mm Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSB1386J HSMC Product Specification HI-SINCERITY Spec. No. : HJ200301 Issued Date : 2001.11.30 Revised Date : 2005.07.14 Page No. : 4/4 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245 C ±5 C 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HSB1386J o o o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification