HSMC HLB120S

HI-SINCERITY
Spec. No. : HA200204
Issued Date : 2002.02.01
Revised Date : 2005.02.05
Page No. : 1/4
MICROELECTRONICS CORP.
HLB120S
NPN Triple Diffused Planar Type High Voltage Transistors
Description
The HLB120S is a medium power transistor designed for use in switching
applications.
TO-92
Features
• High Breakdown Voltage
• Low Collector Saturation Voltage
• Fast Switching Speed
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ................................................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW
Total Power Dissipation (TC=25°C) ...................................................................................................................... 7 W
• Maximum Voltages and Currents (TA=25°C)
VCBO Collector to Base Voltage ......................................................................................................................... 500 V
VCEO Collector to Emitter Voltage ...................................................................................................................... 400 V
VEBO Emitter to Base Voltage ................................................................................................................................ 6 V
IC Collector Current (DC) ............................................................................................................................... 100 mA
IC Collector Current (Pulse)............................................................................................................................ 200 mA
IB Base Current (DC)........................................................................................................................................ 20 mA
IB Base Current (Pulse).................................................................................................................................... 40 mA
Electrical Characteristics (TA=25°C)
Symbol
Min.
Typ.
Max
Unit
Test Conditions
BVCBO
500
-
-
V
IC=100uA, IE=0
BVCEO
400
-
-
V
IC=10mA, IB=0
BVEBO
6
-
-
V
IE=10uA, IC=0
ICBO
-
-
10
uA
VCB=450V
ICEO
-
-
10
uA
VCE=400V, IB=0
IEBO
-
-
10
uA
VEB=6V, IC=0
*VCE(sat)1
-
-
400
mV
IC=50mA, IB=10mA
*VCE(sat)2
-
-
750
mV
IC=100mA, IB=20mA
*VBE(sat)
-
-
1
V
IC=50mA, IB=10mA
*hFE1
8
-
-
VCE=10V, IC=10mA
*hFE2
10
-
36
VCE=10V, IC=50mA
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HLB120S
HSMC Product Specification
HI-SINCERITY
Spec. No. : HA200204
Issued Date : 2002.02.01
Revised Date : 2005.02.05
Page No. : 2/4
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
Saturation Voltage & Collector Current
100
Saturation Voltage (mV)
10000
hFE
VCE=10V
10
1000
100
VCE(sat) @ IC=5IB
1
10
1
10
100
1
1000
Collector Current (mA)
Saturation Voltage & Collector Current
100
1000
Capacitance & Reverse-Biased Voltage
10000
10
Capacitance (Pf)
Saturation Voltage (mV)
10
Collector Current (mA)
1000
VBE(sat) @ IC=5IB
Cob
100
1
1
10
100
1
1000
10
Collector Current (mA)
100
Reverse Biased Voltage (V)
Switching time & Collector Current
Safe Operating Area
1
10.00
Collector Current (mA)
Switching Time (us)...
Tstg
1.00
Tf
Ton
0.10
0.1
PT=1ms
PT=100ms
PT=1s
0.01
VCC=125V, IC=5IB
0.01
0.001
10
100
Collector Current (mA)
HLB120S
1
10
100
1000
Forward Voltage (V)
HSMC Product Specification
HI-SINCERITY
Spec. No. : HA200204
Issued Date : 2002.02.01
Revised Date : 2005.02.05
Page No. : 3/4
MICROELECTRONICS CORP.
TO-92 Dimension
A
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
B
1
DIM
A
B
C
D
E
F
G
H
I
α1
α2
α3
Marking:
α2
2
H
L B
1 2 0 S
3
Control Code
Date Code
α3
Note: Green label is used for pb-free packing
C
Pin Style: 1.Emitter 2.Collector 3.Base
D
H
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
G
Min.
4.33
4.33
12.70
0.36
3.36
0.36
-
Max.
4.83
4.83
0.56
*1.27
3.76
0.56
*2.54
*1.27
*5°
*2°
*2°
*: Typical, Unit: mm
α1
I
E
F
3-Lead TO-92 Plastic Package
HSMC Package Code: A
TO-92 Taping Dimension
H2
H2A H2A
H2
D2
A
H3
H4 H
L
L1
H1
W1
W
D1
F1F2
T2
T
T1
P1
P
P2
D
DIM
A
D
D1
D2
F1,F2
H
H1
H2
H2A
H3
H4
L
L1
P
P1
P2
T
T1
T2
W
W1
Min.
4.33
3.80
0.36
4.33
2.40
15.50
8.50
2.50
12.50
5.95
50.30
0.36
17.50
5.00
Max.
4.83
4.20
0.53
4.83
2.90
16.50
9.50
1
1
27
21
11
12.90
6.75
51.30
0.55
1.42
0.68
19.00
7.00
Unit: mm
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HLB120S
HSMC Product Specification
HI-SINCERITY
Spec. No. : HA200204
Issued Date : 2002.02.01
Revised Date : 2005.02.05
Page No. : 4/4
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
tP
Critical Zone
TL to TP
TP
Ramp-up
TL
tL
Temperature
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
<3 C/sec
<3oC/sec
- Temperature Min (Tsmin)
100oC
150oC
- Temperature Max (Tsmax)
150oC
200oC
60~120 sec
60~180 sec
<3oC/sec
<3oC/sec
183oC
217oC
Average ramp-up rate (TL to TP)
o
Preheat
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
60~150 sec
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
o
o
60~150 sec
240 C +0/-5 C
260oC +0/-5oC
10~30 sec
20~40 sec
<6oC/sec
<6oC/sec
<6 minutes
<8 minutes
Peak temperature
Dipping time
245 C ±5 C
5sec ±1sec
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
HLB120S
o
o
o
o
260 C +0/-5 C
5sec ±1sec
HSMC Product Specification