HI-SINCERITY Spec. No. : HA200204 Issued Date : 2002.02.01 Revised Date : 2005.02.05 Page No. : 1/4 MICROELECTRONICS CORP. HLB120S NPN Triple Diffused Planar Type High Voltage Transistors Description The HLB120S is a medium power transistor designed for use in switching applications. TO-92 Features • High Breakdown Voltage • Low Collector Saturation Voltage • Fast Switching Speed Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW Total Power Dissipation (TC=25°C) ...................................................................................................................... 7 W • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ......................................................................................................................... 500 V VCEO Collector to Emitter Voltage ...................................................................................................................... 400 V VEBO Emitter to Base Voltage ................................................................................................................................ 6 V IC Collector Current (DC) ............................................................................................................................... 100 mA IC Collector Current (Pulse)............................................................................................................................ 200 mA IB Base Current (DC)........................................................................................................................................ 20 mA IB Base Current (Pulse).................................................................................................................................... 40 mA Electrical Characteristics (TA=25°C) Symbol Min. Typ. Max Unit Test Conditions BVCBO 500 - - V IC=100uA, IE=0 BVCEO 400 - - V IC=10mA, IB=0 BVEBO 6 - - V IE=10uA, IC=0 ICBO - - 10 uA VCB=450V ICEO - - 10 uA VCE=400V, IB=0 IEBO - - 10 uA VEB=6V, IC=0 *VCE(sat)1 - - 400 mV IC=50mA, IB=10mA *VCE(sat)2 - - 750 mV IC=100mA, IB=20mA *VBE(sat) - - 1 V IC=50mA, IB=10mA *hFE1 8 - - VCE=10V, IC=10mA *hFE2 10 - 36 VCE=10V, IC=50mA *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% HLB120S HSMC Product Specification HI-SINCERITY Spec. No. : HA200204 Issued Date : 2002.02.01 Revised Date : 2005.02.05 Page No. : 2/4 MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current Saturation Voltage & Collector Current 100 Saturation Voltage (mV) 10000 hFE VCE=10V 10 1000 100 VCE(sat) @ IC=5IB 1 10 1 10 100 1 1000 Collector Current (mA) Saturation Voltage & Collector Current 100 1000 Capacitance & Reverse-Biased Voltage 10000 10 Capacitance (Pf) Saturation Voltage (mV) 10 Collector Current (mA) 1000 VBE(sat) @ IC=5IB Cob 100 1 1 10 100 1 1000 10 Collector Current (mA) 100 Reverse Biased Voltage (V) Switching time & Collector Current Safe Operating Area 1 10.00 Collector Current (mA) Switching Time (us)... Tstg 1.00 Tf Ton 0.10 0.1 PT=1ms PT=100ms PT=1s 0.01 VCC=125V, IC=5IB 0.01 0.001 10 100 Collector Current (mA) HLB120S 1 10 100 1000 Forward Voltage (V) HSMC Product Specification HI-SINCERITY Spec. No. : HA200204 Issued Date : 2002.02.01 Revised Date : 2005.02.05 Page No. : 3/4 MICROELECTRONICS CORP. TO-92 Dimension A Pb Free Mark Pb-Free: " . " (Note) Normal: None B 1 DIM A B C D E F G H I α1 α2 α3 Marking: α2 2 H L B 1 2 0 S 3 Control Code Date Code α3 Note: Green label is used for pb-free packing C Pin Style: 1.Emitter 2.Collector 3.Base D H Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 G Min. 4.33 4.33 12.70 0.36 3.36 0.36 - Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27 *5° *2° *2° *: Typical, Unit: mm α1 I E F 3-Lead TO-92 Plastic Package HSMC Package Code: A TO-92 Taping Dimension H2 H2A H2A H2 D2 A H3 H4 H L L1 H1 W1 W D1 F1F2 T2 T T1 P1 P P2 D DIM A D D1 D2 F1,F2 H H1 H2 H2A H3 H4 L L1 P P1 P2 T T1 T2 W W1 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 1 1 27 21 11 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00 Unit: mm Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HLB120S HSMC Product Specification HI-SINCERITY Spec. No. : HA200204 Issued Date : 2002.02.01 Revised Date : 2005.02.05 Page No. : 4/4 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245 C ±5 C 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HLB120S o o o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification