N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HE13009 █ HIGH VOLTAGE SWITCH MODE APPLICICATIONS High Speed Switching Suitable for Switching Regulator and Montor Control █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 100W VCBO——Collector-Base Voltage…………………………… 700V VCEO——Collector-Emitter Voltage………………………… 400V 1―Base，B 2―Collector，C 3―Emitter, E VEBO ——Emitter-Base Voltage……………………………… 9V IC——Collector Current（DC）……………………………… 12A IB——Base Current……………………………………………6A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVCEO IEBO HFE（1） Characteristics Collector-Emitter Breakdown Voltage Min Typ 400 1 Emitter-Base Cut-off Current DC Current Gain HFE（2） Max Unit Test Conditions V IC=10mA, IB=0 mA VEB=9V, IC=0 8 40 VCE=5V, IC=5A 6 30 VCE=5V, IC=8A 1 V IC=5A, IB=1A VCE(sat)2 1.5 V IC=8A, IB=1.6A VCE(sat)3 3 V IC=12A, IB=3A 1.2 V IC=5A, IB=1A 1.6 V IC=8A, IB=1.6A pF VCB=10V,f=0.1MHz MHz VCE=10V,IC=0.5A VCE(sat)1 VBE(sat)1 Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage VBE(sat)2 Cob 180 Output Capacitance 4 fT Current Gain-Bandwidth Product tON Turn On Time 1.1 μs tSTG Storage Time 3 μs VCC=125V, IC=8A, 0.7 μs IB1=1.6A,IB2=-1.6A tF Fall Time